SSM6N7002CFU
1
MOSFETs Silicon N-Channel MOS
SSM6N7002CFU
SSM6N7002CFU
SSM6N7002CFU
SSM6N7002CFU
Start of commercial production
2015-04
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) Gate-Source diode for protection
(2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)
RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)
RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
US6
1. Source1
2. Gate1
3. Drain2
4. Source2
5. Gate2
6. Drain1
2015-04-13
Rev.1.0
SSM6N7002CFU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 1), (Note 2)
(Note 3)
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Rating
60
±20
170
680
285
150
-55 to 150
Unit
V
mA
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1%
Note 3: Device mounted on an FR-4 board.(total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2015-04-13
Rev.1.0
SSM6N7002CFU
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
|Yfs|
Test Condition
VDS = 0 V, VGS = ±16 V
VDS = 0 V, VGS = ±10 V
VDS = 0 V, VGS = ±5 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V,
Tj = 150
ID = 250 µA, VGS = 0 V
ID = 250 µA, VDS = VGS
ID = 100 mA, VGS = 10 V
ID = 100 mA, VGS = 10 V,
Tj = 150
ID = 100 mA, VGS = 5 V
ID = 100 mA, VGS = 4.5 V
VDS = 10 V, ID = 200 mA
Min
60
1.1
Typ.
2.8
5.4
3.1
3.2
450
Max
±2
±0.5
±0.1
1
200
2.1
3.9
8.1
4.4
4.7
Unit
µA
µA
V
V
Ω
mS
Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (250 µA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
)(Q1,Q2 Common)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on delay time)
Switching time (rise time)
Switching time (turn-off delay time)
Switching time (fall time)
Symbol
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Test Condition
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 40 V, ID = 160 mA,
VGS = 0 to 10 V, RG = 50 Ω
Min
Typ.
11
0.7
3
2
3
7
24
Max
17
4
14
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2015-04-13
Rev.1.0
SSM6N7002CFU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Qg
Qgs
Qgd
Test Condition
VDS = 30 V, ID = 200 mA,
VGS = 4.5 V
Min
Typ.
0.27
0.08
0.08
Max
0.35
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Characteristics
Diode forward voltage (Note 1)
Symbol
VDSF
Test Condition
ID = -115 mA, VGS = 0 V
Min
Typ.
-0.87
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2015-04-13
Rev.1.0
SSM6N7002CFU
5
7.
7.
7.
7. Characteristics Curves (Q1,Q2 Common) (Note)
Characteristics Curves (Q1,Q2 Common) (Note)
Characteristics Curves (Q1,Q2 Common) (Note)
Characteristics Curves (Q1,Q2 Common) (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 7.2
7.2
7.2
7.2 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 7.3
7.3
7.3
7.3 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 7.4
7.4
7.4
7.4 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
D
Fig.
Fig.
Fig.
Fig. 7.5
7.5
7.5
7.5 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 7.6
7.6
7.6
7.6 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
a
2015-04-13
Rev.1.0
SSM6N7002CFU
6
Fig.
Fig.
Fig.
Fig. 7.7
7.7
7.7
7.7 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 7.8
7.8
7.8
7.8 C - V
C - V
C - V
C - VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 7.9
7.9
7.9
7.9 t - I
t - I
t - I
t - ID
D
D
DFig.
Fig.
Fig.
Fig. 7.10
7.10
7.10
7.10 Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
Fig.
Fig.
Fig.
Fig. 7.11
7.11
7.11
7.11 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
wFig.
Fig.
Fig.
Fig. 7.12
7.12
7.12
7.12 Safe Operating Area
Safe Operating Area
Safe Operating Area
Safe Operating Area
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2015-04-13
Rev.1.0
SSM6N7002CFU
7
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 6.8 mg (typ.)
Package Name(s)
Nickname: US6
2015-04-13
Rev.1.0
SSM6N7002CFU
8
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
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TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2015-04-13
Rev.1.0
Mouser Electronics
Authorized Distributor
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