BSC150N03LD G
OptiMOS™3 Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
≤10 secs steady state
Continuous drain current IDVGS=10 V, TC=25 °C A
VGS=10 V, TC=100 °C
VGS=4.5 V, TC=25 °C
VGS=4.5 V,
TC=100 °C
VGS=10 V, TA=25 °C3) 12.4 8
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=20 A, RGS=25 ΩmJ
Gate source voltage VGS V
Power dissipation Ptot TC=25 °C W
TA=25 °C3) 3.6 1.5
Operating and storage temperature Tj, Tstg °C
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
17
80
10
Value
20
20
20
±20
26
-55 ... 150
55/150/56
VDS 30 V
RDS(on),max 15 mΩ
ID20 A
Product Summary
Type Package Marking
BSC150N03LD G PG-TDSON-8 150N03LD
PG-TDSON-8
Rev. 1.4 page 1 2009-11-04
BSC150N03LD G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC bottom - - 4.9 K/W
top 20
RthJA t≤10 s - - 35
steady state - - 85
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 1 - 2.2
Zero gate voltage drain current IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=30 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
RDS(on) VGS=4.5 V, ID=20 A - 17.6 22 mΩ
VGS=10 V, ID=20 A - 12.5 15
Gate resistance RG- 1.2 1.8 Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=20 A 18 35 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
Values
2) See figure 3
Thermal resistance, junction -
ambient, 6 cm² cooling area3)
Drain-source on-state resistance
Rev. 1.4 page 2 2009-11-04
BSC150N03LD G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 850 1100 pF
Output capacitance Coss - 350 470
Reverse transfer capacitance Crss -16-
Turn-on delay time td(on) - 2.7 - ns
Rise time tr- 2.2 -
Turn-off delay time td(off) -12-
Fall time tf- 2.0 -
Gate Char
g
e Characteristics4)
Gate to source charge Qgs - 2.6 - nC
Gate charge at threshold Qg(th) - 1.2 -
Gate to drain charge Qgd - 1.2 -
Switching charge Qsw - 2.6 -
Gate charge total Qg- 4.8 6.4
Gate plateau voltage Vplateau - 3.4 - V
Gate charge total Qg
VDD=15 V, ID=20 A,
VGS=0 to 10 V - 10 13.2
Gate charge total, sync. FET Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V - 4.2 - nC
Output charge Qoss VDD=15 V, VGS=0 V -9-
Reverse Diode
Diode continuous forward current IS- - 20 A
Diode pulse current IS,pulse --80
Diode forward voltage VSD
VGS=0 V, IF=20 A,
Tj=25 °C - 0.93 1.1 V
Reverse recovery charge Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs - - 10 nC
4) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=20 A, RG=1.6 Ω
VDD=15 V, ID=20 A,
VGS=0 to 4.5 V
Rev. 1.4 page 3 2009-11-04
BSC150N03LD G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
0.01
0.1
1
10
0000001
tp [s]
ZthJC [K/W]
0
5
10
15
20
25
30
0 40 80 120 160
TC [°C]
Ptot [W]
0
5
10
15
20
25
0 40 80 120 160
TC [°C]
ID [A]
Rev. 1.4 page 4 2009-11-04
BSC150N03LD G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.2 V 3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
0102030
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
10
20
30
40
50
60
70
80
012345
VGS [V]
ID [A]
0
5
10
15
20
25
30
35
40
0102030
ID [A]
gfs [S]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
50
60
70
80
0123
VDS [V]
ID [A]
Rev. 1.4 page 5 2009-11-04
BSC150N03LD G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=20 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
101
100
0102030
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF [A]
Rev. 1.4 page 6 2009-11-04
BSC150N03LD G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=20 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
22
24
26
28
31
33
35
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
6 V 15 V
24 V
0
2
4
6
8
10
12
024681012
Qgate [nC]
VGS [V]
Rev. 1.4 page 7 2009-11-04
BSC150N03LD G
Package Outline and Footprint PG-TDSON-8 dual
Rev. 1.4 page 8 2009-11-04
BSC150N03LD G
Tape PG-TDSON-8
Dimensions in mm
Rev. 1.4 page 9 2009-11-04
BSC150N03LD G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.4 page 10 2009-11-04
