TLP161G
2010-10-01
1
TOSHIBA Photocoupler GaAs Ired & PhotoTriac
TLP161G
Triac Drive
Programmable Controllers
ACOutput Module
Solid State Relay
The TOSHIBA mini flat coupler TLP161G is a small outline coupler,
suitable for surface mount assembly.
The TLP161G consists of a photo triac, optically coupled to a gallium
arsenide infrared emitting diode.
Zerovoltage crossing turnon
Peak offstate voltage: 400V(min.)
Trigger LED current: 10mA(max.)
Onstate current: 70mA(max.)
Isolation voltage: 2500Vrms(min.)
UL recognized: UL1577, file no. E67349
Trigger LED Current
Trigger LED Current (mA)
VT=3V, Ta=25°C
Classi
fication* Min. Max.
Marking Of
Classification
(IFT5) 5 T5
(IFT7) 7 T5, T7
Standard 10 T5, T7, blank
*Ex. (IFT5); TLP161G(IFT5)
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP161G(IFT5): TLP161G
Pin Configurations
1. ANODE
3. CATHODE
4. TERMINAL 1
6. TERMINAL 2
1
3
6
4
ZC
Unit : mm
TOSHIBA 114C3
Weight: 0.09 g (typ.)
TLP161G
2010-10-01
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta 53°C) ΔIF / °C 0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Offstate output terminal voltage VDRM 400 V
Ta=25°C 70
Onstate RMS current
Ta=70°C
IT(RMS)
40
mA
Onstate current derating (Ta 25°C) ΔIT / °C 0.67 mA / °C
Peak onstate current (100μs pulse, 120pps) ITP 2 A
Peak nonrepetitive surge current
(PW=10ms) ITSM 1.2 A
Detector
Junction temperature Tj 115 °C
Storage temperature range Tstg 55 to 125 °C
Operating temperature range Topr 40 to 100 °C
Lead soldering temperature (10s) Tsol 260 °C
Isolation voltage (AC, 1min., R.H. 60%) (Note) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VAC 120 Vac
Forward current IF 15 20 25 mA
Peak onstate current ITP 1 A
Operating temperature Topr 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP161G
2010-10-01
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F=10mA 1.0 1.15 1.3 V
Reverse current IR V
R=5V 10 μA
LED
Capacitance CT V=0, f=1MHz 30 pF
Peak offstate current IDRM V
DRM=400V 10 1000 nA
Peak onstate voltage VTM I
TM=70 mA 1.7 2.8 V
Holding current IH 0.6 mA
Critical rate of rise of
offstate voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 V / μs
Detector
Critical rate of rise of
commutating voltage dv / dt(c) Vin=30Vrms, IT=15mA (Fig.1) 0.2 V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current IFT V
T=3V 5 10 mA
Inhibit voltage VIH I
F=rated IFT 40 V
Leakage in inhibited state IIH IF=rated IFT
VT=rated VDRM 100 300 μA
Capacitance (input to output) CS V
S=0, f=1MHz 0.8 pF
Isolation resistance RS V
S=500V, R.H. 60% 1×1012 1014
AC, 1 minute 2500
AC, 1 second, in oil 5000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 5000 Vdc
Fig.1 dv / dt test circuit
5VVCC
0V
dv / dt (c) dv / dt
1 6
3 4
Vin
RL
2k Ω
VCC +
Rin
120Ω
TLP161G
2010-10-01
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Allowable forward current
I
F (mA)
IF – Ta
Ambient temperature Ta (°C)
120
60
20
10
50
40
30
20
0 20
40 80 100
60
0
IT(RMS) – Ta
Ambient temperature Ta (°C)
R.M.S. on-state current
IT(RMS) (mA)
120
20
0
100
80
60
20
0 40 80 100 120 60 20
40
ΔVF / ΔTa IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
3.2
0.4
0.1
2.0
1.6
1.2
0.8
1 3 10 30 50
2.4
0.3
2.8
IFP – DR
Duty cycle ratio DR
Allowable pulse forward
current IFP (mA)
3000
10
1000
100
103 3 102 3 101 3 100
500
50
30
300
3
Pulse width 100 μs
Ta = 25°C
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
30
10
3
1
0.3
0.8 1.2 1.4 1.6 1.8
50
5
0.5
0.6 1.0
Ta = 25°C
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1
0.6 1.0 2.2 2.6 3.0
500
100
50
10
3
1.4 1.8
300
30
5Pulse width 10 μs
Repetitive frequency
= 100 Hz
Ta = 25°C
TLP161G
2010-10-01
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Normalized VDRM – Ta
VT = 3V
VDRM = Rated
Ambient temperature Ta (°C)
Trigger led current IFT
(arbitrary unit)
Normalized IFT – Ta
100
3
40
1
20 0 80 40
0.1
1.2
2
0.5
20 60
0.3
Holding current I
(arbitrary unit)
Normalized IH – Ta
Ambient temperature Ta (°C)
100
3
40
2
1
0.5
0.3
20 0 20 60 80
40
0.1
1.2
Ambient temperature Ta (°C)
Off-state output terminal voltage VDRM
(arbitrary unit)
100 40 20 0 80 40 20 60
1.4
0.8
0.4
0.2
1.0
1.2
0.6
Ambient temperature Ta (°C)
Peak off-state current IDRM
(arbitrary unit)
Normalized IDRM – Ta
100
103
0
101
100
20 40 80 60
102
Inhibit current IIH
(arbitrary unit)
Normalized IIH – Ta
Ambient temperature Ta (°C)
100
3
40
2
1
0.5
0.3
20 0 20 60 80
40
0.1
1.2
IF = Rated IFT
VT = Rated VDRM
Ambient temperature Ta (°C)
Inhibit voltage VIH
(arbitrary unit)
Normalized VIH – Ta
100
3
40
1
20 0 80 40
0.1
1.2
2
0.5
20 60
0.3
IF = Rated IFT
TLP161G
2010-10-01
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