© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C70A
IC90 TC= 90°C35A
ICM TC= 25°C, 1 ms 140 A
SSOA VGE = 15 V, TJ = 125°C, RG = 5 Ω ICM = 90 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VCE = 720 V; VGE = 15 V, RG = 22 Ω 10 µs
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 1.0 mA, VGE = 0 V 1200 V
VGE(th) IC= 250 µA, VCE = VGE 36V
ICES VCE = 0.8 VCES TJ = 25°C50µA
Note 1 TJ = 125°C 2.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V TJ = 25°C 3.6 V
Note 2 TJ = 125°C 2.9 V
Features
lEpitaxial Silicon drift region
- fast switching
- small tail current
lMOS gate turn-on for drive simplicity
Applications
•AC motor speed control
•DC servo and robot drives
•Uninterruptible power supplies (UPS)
•Switched-mode and resonant-mode
power supplies
•DC choppers
98669B (01/02)
G = Gate C = Collector
E = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
G
E
IXSH 35N120B
IXST 35N120B IC25 = 70 A
VCES = 1200 V
VCE(sat) = 3.6 V
"S" Series - Improved SCSOA Capability
IGBT
G
CE
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 16 23 S
Note 2
Cies 3600 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 260 pF
Cres 75 pF
Qg120 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 33 nC
Qgc 49 nC
td(on) 36 ns
tri 27 ns
td(off) 160 300 ns
tfi 180 300 ns
Eoff 59mJ
td(on) 38 ns
tri 29 ns
Eon 2.5 mJ
td(off) 240 ns
tfi 340 ns
Eoff 9mJ
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V
RG = 5 Ω, VCE = 0.8 VCES
Note 3
TO-247 AD Outline (IXSH)
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V
RG = 5 Ω
VCE = 0.8 VCES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline (IXST)
IXSH 35N120B
IXST 35N120B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
