ES3A - ES3D
ES3A-ES3D, Rev. A
3.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Parameter Device Units
3A 3B 3C 3D
Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR) 50 100 150 200 V
Maximum Reverse Current
@ rated VRTA = 25°C
TA = 100°C10
500 µA
µA
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 20 nS
Maximum Forward Voltage @ 3.0 A 0.90 V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz45 pF
Symbol Parameter Value Units
IO Average Rectified Current
.375 " lead length @ TA = 75°C3.0 A
if(surge) Peak Forward Surge Current
8.3 ms si ngl e hal f-sine-wave
Superimposed on rated load (JE DE C method) 100 A
PD Total Device Dissipation
Derate above 25°C2.66
21.28 W
mW/°C
RθJA Thermal Resistance, Juncti on to Ambient** 47 °C/W
RθJL Thermal Resistance, Juncti on to Lead** 12 °C/W
Tstg Storage Temperature Range -50 to +150 °C
TJ Operating Juncti on Temperature -50 to +150 °C
ES3A - ES3D
Features
• For surface mount applications.
•Glass passivated junction.
•Low profile package.
•Easy pick and place.
• Built-in strain relief.
•Superfast recovery times for
high efficiency.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
2 1
0.320 (8.128)
0.305 (7.747)
0.280 (7.112)
0.260 (6.604)
0.103 (2.616)
0.079 (2.007)
0.245 (6.223)
0.220 (5.588)
0.008 (0.203)
0.004 (0.102)0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.124 (3.150)
0.108 (2.743)
Discrete POWER & Signal
Technologies
ES3A - ES3D
ES3A-ES3D, Rev. A
Typical Characteristics
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 1 0 ns/ cm
Non-Rep etitive Surge Current
12 51020 50100
10
50
100
200
NUMB E R OF C YCLES AT 6 0Hz
PEAK FORWARD SURGE CURREN T (A)
Forward Cur rent Derating Curve
0 25 50 75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
AMBIENT TEMPERATURE ( C)
FO RWAR D CURRENT (A )
º
SINGLE PHASE
HALF WAVE
60HZ
RESIS TIVE OR
INDUCTIVE LOA D
.3 75" (9.0mm) LEAD
LENGTHS
Forward Characteristi cs
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
FORWARD VOLTAGE (V)
FORWAR D CURR ENT (A)
Pulse Width = 30 0µs
2% D uty Cyc le
T = 25 C
º
A
Junction Capacitance
0.1 0.5 1 5 10 20 50 100 500
0
10
20
30
40
50
60
70
80
90
100
REVERSE VOLTAGE (V)
CAPACITANCE (p F )
Reverse Characteristics
0 20406080100120140
0.1
1
10
100
1000
PERCENT OF R ATE D PEAK RE VER SE VOLTAGE ( % )
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 100 C
º
A
T = 75 C
º
A
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
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Definition of Terms
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Advance Information
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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