1. Product profile
1.1 General description
Single high-voltage switching diode, fabricated in planar technology, and encapsulated in
a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: trr 50 ns
High reverse voltage: VR300 V
Repetitive peak forward current: IFRM 1A
Ultra small SMD plastic package
AEC-Q101 qualified
1.3 Applications
High-speed switching
High-voltage switching
1.4 Quick reference data
[1] Tsp is the solder point temperature at the soldering point of the cathode tab.
[2] When switched from IF= 30 mA to IR=30mA; R
L= 100 Ω; measured at IR=3mA.
BAS521
Single high-voltage switching diode
Rev. 2 — 5 November 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current Tsp 90 °C[1] --250mA
VRreverse voltage - - 300 V
trr reverse recovery time [2] -1650ns
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 2 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
[1] Tsp is the solder point temperature at the soldering point of the cathode tab.
[2] Tj=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode 21
006aab04
0
2
1
Table 3. Ordering i nformation
Type number Package
Name Description Version
BAS521 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 4. Marking codes
Type number Marking code
BAS521 L4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 300 V
VRRM repetitive peak reverse
voltage -300V
IFforward current Tsp 90 °C[1] 250 mA
IFRM repetitive peak forward
current tp=1ms;
δ=0.25 -1A
IFSM non-repetitive peak forward
current square wave;
tp=1μs[2] -4.5A
Ptot total power dissipation Tsp 90 °C[1][3] -500mW
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 3 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: tp= 300 μs; δ=0.02.
[2] When switched from IF= 30 mA to IR=30mA; R
L= 100 Ω; measured at IR=3mA.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point [3] - - 120 K/W
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR= 100 μA 300 340 - V
VFforward voltage IF=100mA [1] - 0.95 1.1 V
IRreverse current VR= 250 V - 30 150 nA
VR=250V;
Tamb =150°C- 40 100 μA
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.4 5 pF
trr reverse recovery time [2] - 1650ns
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 4 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
(1) Tamb = 150 °C
(2) Tamb =75°C
(3) Tamb =25°C
VR=V
Rmax
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Re verse current as a function of junction
temperature; typical value s
f=1MHz; T
amb =25°C
Fig 3. Forward current as a function of ambient
temperature; derating curve Fig 4. Dio de ca pacitance as a function of reverse
voltage; typical values
0 0.5 1 1.5
IF
(mA)
VF (V)
500
0
400
300
200
100
mhc618
(2)(1) (3)
2000 40 80 120
IR
(μA)
160
Tj (°C)
102
10
1
101
102
mhc619
0
300
200
100
0
50 100 200
Tamb (°C)
150
IF
(mA)
mhc620
01020 40
0.42
0.3
0.34
0.38
30
Cd
(pF)
VR (V)
mhc621
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 5 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
Based on square wave currents.
Tj=25°C prior to surge.
Fig 5. No n-repetitive peak forward current as a function of pulse duration; maximum values
mbg703
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
(1) IR=3mA
Fig 6. Re verse recovery time test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 6 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 7. Package outline SOD523 (SC-79)
02-12-13Dimensions in mm
1.65
1.55
1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quan tity
3000 8000 10000
BAS521 SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -
---135
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 7 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint SOD523 (SC-79)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_
fr
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 8 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS521 v.2 20101105 Product data sheet - BAS521_1
Modifications: Section 1.2 “Features and benefits: amended
Section 8 “Test information: added
Figure 7: superseded by minimized package outline drawing
Section 10 “Packing information: added
Section 11 “Soldering: added
Section 13 “Legal information: updated
BAS521_1 20030812 Product data sheet - -
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 9 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
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Product data sheet.
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Notwithstanding any damages that customer might incur for any reason
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or cu stomer product
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NXP Semiconductors does not accept any liability related to any default,
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customer’s applications or products, or the application or use by custo m er’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
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Export control — This document as well as the item(s) described herein
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BAS521 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 10 of 11
NXP Semiconductors BAS521
Single high-voltage switching diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAS521
Single high-voltage switching diode
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 November 2010
Document identifi er: BAS521
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11