25C D MM 4235605 0004886 3 MMESIEG Le 25C 04886 D0 Fe BSG NPN Silicon Planar Transistors 2N 2220 2N 2221 SIEMENS AKTIENGESELLSCHAF 2N 2222 2 .N 2220, 2 N 2221, and 2 N 2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41 876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. E BSG Type | Ordering code 2 2N2220 | a68000-A4573 a 3 2N2221 062702-F134 t 2N 2222 0Q62702-F135 254203 Approx. weight 0.33 g Dimensions in mm 2N 2220 2N 2221 Maximum ratings 2N 2222 Collector-emitter voltage Vceo 30 Vv Collector-base voltage Vero 60 Vv Emitter-base voltage Vego 5 V Collector current Ie 0.8 A Junction temperature Ty 175 C Storage temperature range Tetg -65 to +200 C Total power dissipation (Tamp = 25 C) Prot 0.5 Ww Total power dissipation (Tcgage = 25 C) Prot 1.8 Ww Therma! resistance Junction to ambient air Rina $300 K/W Junction to case Pinu $83 > | KAW 932 nin 2248 6-0325C D MM 8235605 0004887 5 RESIEG 25 04887 | O-T-FS-/7. 2N 2220 SIE 2N 2221 SIEMENS AKTIENGESELLSCHAF 2N 2222 Static characteristics (Tamp = 25C) 2N 2220 | 2N 2221 | 2N 2222 Collector-base breakdown voltage Ue =10 HA) Viaryceo >60 >60 >60 Vv Collector-emitter breakdown voltage (Ie = 10 mA) Vipryceo >30 > 30 >30 Vv Emitter-base breakdown voltage (ig = 10 pA) VieR)eBO >5 >5 >5 Vv Collector-emitter saturation voltage (Ug = 15 mA; Ic = 150 mA) Veesat <0.4 <04 <0.4 V (Jg = 50 mA; Ig = 500 mA) Veesat - <1.6 <1.6 Vv Base-emitter saturation voltage Uc = 150 mA; Ig = 15 mA) Veesat <1.3 <1.3 <1.3 Vv (ic = 500 mA; Jp = 50 mA) Veesat - <2.6 <2.6 Vv Emitter cutoff current (Veg = 3 V) Tego <10 <10 <10 nA Collector cutoff current (Veg = 50 V) Icro <10 <10 <10 nA (Veg = 50 V; Tamb = 150C) Iezo <10 <10 <10 pA DC current gain (Vee =10V; Ic = 0.1 mA) hee > >20 >35 - (Voce = 10 V; Ip = 1 mA) hee >12 >25 >50 - (Vce = 10 V; Ig = 10 mA) hee >17 >35 >75 [= (Vee = 10 V; Ig = 150 mA) hee 20 to 60 40 ta 120 | 100 to 300 | - (VoE =10V; Ic = 500 mA) Age - >20 >30 - (Vee = 1 Vi Ig = 150 mA) hee >10 >20 >60 - Dynamic characteristics (Tap = 25 C) Collector base capacitance | (Veg = 10 V; f = 1 MHz) Ccro <8 <8 <8 pF Transition frequency (Voce = 20 V; Ig = 20 mA; . f = 100 MHz) fr > 250 > 250 >250 MHz Switching times: (Veco = 20 V; Ic = 150 mA; Jg1 approx. Ig2 approx. 150 mA Delay time ty 5 5 5 ns Rise time t, 15 15 15 ns Storage time ts T90 190 190 ns Fall time t; 23 23 23 ns 933 2249 6-04