TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
T4-LDS-0067 Rev. 2 (100293) Page 1 of 4
DEVICES LEVELS
2N5010 2N5013 2N5010S 2N5013S JAN
2N5011 2N5014 2N5011S 2N5014S JANTX
2N5012 2N5015 2N5012S 2N5015S JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage 2N5010 500 Vdc
2N5011 600 Vdc
2N5012 700 Vdc
2N5013 800 Vdc
2N5014 900 Vdc
2N5015
VCER
1000 Vdc
Collector-Base Voltage 2N5010 500 Vdc
2N5011 600 Vdc
2N5012 700 Vdc
2N5013 800 Vdc
2N5014 900 Vdc
2N5015
VCBO
1000 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current IC 200 mAdc
Base Current IB 20 mAdc
Total Power Dissipation
@ TA = +25°C
@ TC = +25° C Pt
1.0
7.0 W
Thermal Resistance, Junction to Case 1/ RθJC 20 °C/W
Operating & Storage Junction Temperature Range Tj, Tstg -65 to +200 °C
Note:
1/ See 19500/727 for Thermal Derating Curves.
TO-5
2N5010 thru 2N5015
TO-39
2N5010S thru 2N5015S
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Collector to Base Cutoff Current
VCB = 400V
VCB = 500V
VCB = 580V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO1
10
10
10
10
10
10
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
@ TA = +150°C
VCB = 400V
VCB = 500V
VCB = 588V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO2
10
10
10
10
10
10
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
Emitter to Base Cutoff Current
VEB = 4V IEBO 20 uAdc
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.2mAdc
IC = 0.2mAdc
IC = 0.2mAdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CBO
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA V(BR)EBO 5 Vdc
Collector to Emitter Breakdown Voltage
RBE = 1KΩ
IC = 0.2mA, Pulsed 2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CER
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
VCE = 10V
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015 hFE1 30
30 180
180
VCE = 10V
IC = 5mA h
FE2 10
VCE = 10V
IC = 20mA @ TA = -55°C hFE3 10
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293) Page 3 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions Symbol Min. Max. Unit
Base-Emitter Saturation Voltage
IC = 25mA
IC = 20mA
IB = 5mA, Pulsed
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015 VBE(SAT) 1.0
1.0 Vdc
Vdc
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 25mA
IC = 25mA
IC = 20mA
IC = 20mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
VCE(SAT)
1.4
1.5
1.6
1.6
1.6
1.8
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of small signal short-circuit fo rward current transfer ratio
VCE = 10Vdc, IC = 25mA, f = 10MHz
VCE = 10Vdc, IC = 20mA, f = 10MHz 2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
|hfe| 1.0
1.0
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz Cobo
30 pF
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293) Page 4 of 4
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CD .305 .335 7.75 8.51 6
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 7
LD .016 .019 0.41 0.48 8,9
LL See note 14
LU .016 .019 0.41 0.48 8,9
L1 .050 1.27 8,9
L2 .250 6.35 8,9
P .100 2.54 7
Q .030 0.76 5
TL .029 .045 0.74 1.14 3,4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α 45° TP 45° TP 7
1, 2, 10, 12, 13, 14
NOTE:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for au tomatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured
by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled
in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-
suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
