TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013S 2N5014S 2N5015S JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit 2N5010 500 Vdc 2N5011 600 Vdc 700 Vdc 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc 2N5010 500 Vdc 2N5011 600 Vdc 700 Vdc 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc VEBO 5 Vdc Collector Current IC 200 mAdc Base Current IB 20 mAdc Pt 1.0 7.0 W RJC 20 C/W Tj, Tstg -65 to +200 C Collector-Emitter Voltage 2N5012 Collector-Base Voltage VCER 2N5012 2N5013 Emitter-Base Voltage VCBO TO-5 2N5010 thru 2N5015 Total Power Dissipation @ TA = +25C @ TC = +25 C Thermal Resistance, Junction to Case 1/ Operating & Storage Junction Temperature Range TO-39 2N5010S thru 2N5015S Note: 1/ See 19500/727 for Thermal Derating Curves. T4-LDS-0067 Rev. 2 (100293) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Collector to Base Cutoff Current VCB = 400V VCB = 500V VCB = 580V VCB = 650V VCB = 700V VCB = 760V VCB = 400V VCB = 500V VCB = 588V VCB = 650V VCB = 700V VCB = 760V Emitter to Base Cutoff Current VEB = 4V Collector to Base Breakdown Voltage IC = 0.1mAdc IC = 0.1mAdc IC = 0.1mAdc IC = 0.2mAdc IC = 0.2mAdc IC = 0.2mAdc Emitter to Base Breakdown Voltage IC = 0mA IE = 0.05mA Collector to Emitter Breakdown Voltage RBE = 1K IC = 0.2mA, Pulsed Forward-Current Transfer Ratio IC = 25mA IC = 20mA VCE = 10V 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 @ TA = +150C 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 T4-LDS-0067 Rev. 2 (100293) Min. ICBO1 ICBO2 IEBO 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 VCE = 10V IC = 5mA VCE = 10V IC = 20mA Symbol @ TA = -55C Max. Unit 10 10 10 10 10 10 nAdc nAdc nAdc nAdc nAdc nAdc 10 10 10 10 10 10 uAdc uAdc uAdc uAdc uAdc uAdc 20 uAdc V(BR)CBO 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc V(BR)EBO 5 Vdc V(BR)CER 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc hFE1 30 30 hFE2 10 hFE3 10 180 180 Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (Cont.) Parameters / Test Conditions Base-Emitter Saturation Voltage IC = 25mA IC = 20mA IB = 5mA, Pulsed 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Symbol Min. Max. Unit VBE(SAT) 1.0 1.0 Vdc Vdc VCE(SAT) 1.4 1.5 1.6 1.6 1.6 1.8 Vdc Vdc Vdc Vdc Vdc Vdc Max. Unit Collector-Emitter Saturation Voltage IC = 25mA IC = 25mA IC = 25mA IC = 20mA IC = 20mA IC = 20mA IB = 5mA, Pulsed 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. |hfe| 1.0 1.0 Magnitude of small signal short-circuit forward current transfer ratio VCE = 10Vdc, IC = 25mA, f = 10MHz VCE = 10Vdc, IC = 20mA, f = 10MHz 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Open circuit output capacitance VCB = 10V, IE = 0, f = 2MHz T4-LDS-0067 Rev. 2 (100293) Cobo pF 30 Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45 TP 45 TP 1, 2, 10, 12, 13, 14 Notes 6 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For Ssuffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. T4-LDS-0067 Rev. 2 (100293) Page 4 of 4