V CE IC = = 2500 V 1000 A ABB StakPakTM H Series Press-pack IGBT 5SNR 10H2501 PRELIMINARY Doc. No. 5SYA1580-03 May. 07 * High SOA * Fails into stable shorted state * High tolerance to uneven mounting pressure * Designed for series connection * Explosion resistant package * Modular design concept, available for a wide range of current ratings * SPT chip set Maximum Rated Values1) Parameter2) Collector-emitter voltage Symbol Conditions min V CES Unit 2500 V 1000 A DC collector current IC Repetitive peak collector current I CM 2000 A V GES 20 V T c = 25 C, (IGBT) 10000 W T c = 75 C 1000 A 2000 A 12.4 kA 10 s Gate-emitter voltage Total power dissipation P tot T c = 75 C max DC forward current IF Repetitive peak forward current I FM Surge current I FSM V R = 0 V, t p = 10 ms, T vj = 125 C, half-sinewave IGBT short circuit SOA t psc V CC = 1500 V, V CEM 2500 V, V GE 15V Junction temperature T vj 5 125 C Storage temperature T stg -40 70 C FM 40 75 kN Mounting force 2) 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9 2) For detailed mounting instructions refer to ABB document no. 5SYA 2037-02 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNR 10H2501 IGBT Characteristic Values3) Parameter Symbol Collector-emitter saturation voltage V CEsat min typ max Unit I C = 1000 A, V GE = 15 V T vj = 25C 2.20 2.60 V T vj = 125C 2.70 3.00 V 18 50 mA 500 nA 8.5 V Collector cut-off current I CES V CE = 2500 V, V GE = 0 V, T vj = 125 C Gate leakage current I GES V CE = 0 V, V GE = 20 V, T vj = 125 C V GE(TO) I C = 180 mA, V CE = V GE , T vj = 25 C T vj = 25C 1 J E on V CC = 1250 V, I C = 1000 A, R G = 3.9 , V GE = 15 V, L = 200 nH inductive load T vj = 125C 1.5 J T vj = 25C 1.4 J E off V CC = 1250 V, I C = 1000 A, R G = 5.6 , V GE = 15 V, L = 200 nH inductive load T vj = 125C 1.8 J Gate-emitter threshold voltage Turn-on energy Turn-off energy 3) Conditions 5 7 Characteristic values according to IEC 60747-9 Diode Characteristic Values4) Parameter Symbol Forward voltage VF Reverse recovery current I rr Reverse recovery charge Q rr Reverse recovery time t rr Reverse recovery energy 4) Conditions I F = 1000 A V CC = 1250 V, I F = 1000 A, R G = 3.9 , V GE = 15 V, L = 200 nH inductive load E rec min typ max Unit T vj = 25C 1.95 2.20 V T vj = 125C 1.90 2.20 V T vj = 25C 760 A T vj = 125C 950 A T vj = 25C 560 C T vj = 125C 950 C T vj = 25C 1.3 s T vj = 125C 1.8 s T vj = 25C 0.52 J T vj = 125C 0.86 J Characteristic values according to IEC 60747-2 Thermal Properties Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case R th(j-c) IGBT 11 K/kW Diode thermal resistance junction to case R th(j-c) Diode 22 K/kW IGBT thermal resistance case to heatsink R th(c-h) IGBT Heatsink flatness : 2 K/kW Diode thermal resistance case to heatsink R th(c-h) Diode Each submodule area < 20 m 4 K/kW 125 C Operating junction temperature T vjop Complete module area < 100 m Roughness : < 1.6 m 5 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1580-03 May. 07 page 2 of 4 5SNR 10H2501 Mechanical Properties Parameter Symbol Dimensions Conditions L* W* H min Typical , see outline drawing typ max 236*150*26 Unit mm Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm Surface creepage distance D SC acc. IEC 60664-1 and EN50124-1 23 mm Weight 1.9 kg Analytical function for transient thermal impedance: ZthIC [K/kW] 2 n Zth (j - c)(t) = Ri(1 - e - t/ i ) 1019 8 7 Diode 6 5 i =1 4 3 IGBT 8 7 1 2 3 4 IGBT 1009 i Ri(K/kW) 4.569 4.611 0.945 0.804 i (ms) 580.8 53.11 3.286 0.609 DIODE 2 Ri(K/kW) 9.137 9.223 1.889 1.607 i (ms) 580.8 53.11 3.286 0.609 6 5 4 Fm = 40...75 kN 3 Double Side Cooling 2 10-3 2 3 4 5 6 7 89 10-2 2 3 4 5 6 7 89 10-1 2 3 4 5 6 7 89 100 2 3 4 5 6 7 89 101 t [s] Fig.15 Maximum thermal impedance of IGBT and diode versus time Environmental class according to IEC 60721 Mode Class Document - no. Storage IE 11 5 SZK 9101-01 Transportation IE 23 5 SZK 9102-01 Operation IE 33 5 SZK 9103-01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1580-03 May. 07 page 3 of 4 5SNR 10H2501 Electrical configuration C (Collector) G (Gate) E (Emitter) AE (Aux. Emitter) Outline drawing 5SNR 20H2501 ABCD 01 StakPak H3 This is an electrostatic sensitive device. Please observe the international standard IEC 60747-1, chapter IX. This product has been designed and qualified for Industrial Level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors Doc. No. 5SYA1580-03 May. 07