= u B PNEW ENGLAND SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier, low-frequency switching and hammer driver applications. * High DC Current Gain - hy, = 3000 (Typ) @1, = 2.0 Adc e Low Collector-Emitter Saturation Voltage - Vecr(at) =2.0 Vde (Max) @ Ic =2.0 Ade e Collector-Emitter Sustaining Voltage Voss) = 60 Vde (Min) - 2N6294, 2N6296 = 80 Vde (Min) - 2N6295, 2N6297 e Monolithic Construction with Built-In Base-Emitter Shunt Resistors MAXIMUM RATINGS 2N6294 2N6295 Rating Symbol 2N6296 2N6297 Unit Collector-Emitter Voltage Vero 60 80 Vde Collector-Base Voltage Vos 60 80 Vde Emitter-Base Voltage Ves 5.0 Vde Collector Current - Continuous Io 4.0 Adc ~ Peak 8.0 Base Current Ip 80 mAdc Total Power Dissipation Pp @T.=25'C 50 Watts Derate above 25C 0.286 wc Operating and Storage Junction | T), Ty, -65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Ry ac 3.5 CCIW FIGURE 1 -- POWER DERATING Pp, POWER DISSIPATION (WATTS) 0 40 80 120 160 Tc CASE TEMPERATURE (C) 4 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS 50 WATTS PIN 1, BASE 2. EMITTER CASE: COLLECTOR All JEDEC Dimensions and Notes Apply TO-66 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-352 REV: -- | PNP 2N6294 | 2N6296 2N6295 | 2N6297g ah PNP 2N6294 | 2N6296 2N6295 | 2N6297 = u B PNEW ENGLAND SEMICONDUCTOR * ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) | Characteristics | Symbol | Min { Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Voeosus) I; =50 mAde, I, =0 2N6294, 2N6296 60 Vde 2N6295, 2N6297 80 Collector Cutoff Current luo mAdc Veg = 30 Vde, I, =0 2N6294, 2N6296 0.5 Vex = 40 Vde, 1, =0 2N6295, 2N6297 0.5 Collector Cutoff Current Torx mAde Voge = Rated Vcg, Ve (om = 1.5 Vde 2N6294, 2N6295 0.5 Vox = Rated Vop, Vee com = 1-5 Vde 2N6296, 2N6297 so Vg = Rated Vp, Ve com = 15 Vde 2N6294, 2N6295 . Te = 150C 5.0 Ve = Rated Veg, Var wm = 1.5 Vde 2N6296, 2N6297 Te = 150C Emitter Cutoff Current Tego mAdc Vg = 5.0 Vde, I= 0 20 ON CHARACTERISTICS (1) DC Current Gain hye Ic =2.0 Adc, Voz = 3.0 Vde 750 18000 I.=4.0 Ade, Veg = 3.0 Vde 100 Collector-Emitter Saturation Voltage VicxGa Vde Ic= 2.0 Ade, I, = 8.0 mAde 2.0 I, = 4.0 Ade, I,= 40 mAdc 3.0 Base-Emitter Saturation Voltage Vax(sat) Vde I= 4.0 Ade, I, = 40 mAdc 4.0 Base-Emitter On Voltage Vir(on) Vde Ic =2.0 Adc, Ve, = 3.0 Vde 2.8 DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal | Ne | Short-Circuit Forward Current Transfer Ratio IL =15 Adc, Vo, =3.0 Vde, f = 1.0 Mhz 4.0 Output Capacitance Pp Vcp=10 Vde, 1, =0, f =0.1 Mhz 2N6294, 2N6295 Cop 120 2N6296, 2N6297 200 Smaill-Signal Current Gain hy. Ic = 15 Ade, Veg = 3.0 Vde, f= 1.0 kHz 300 *Indicates JEDEC registered data FIGURE 2 SWITCHING TIMES TEST FIGURE 3 SWITCHING TIMES CIRCUIT 5.0 Voc i vec OV Rip & Re VARIED TO OBTAIN DESIRED CURRENT LEVELS -0V ic/lg = 250 ter tg . Ty Abe tw ] SCOPE 10 V2 . >a = Bo OOK { -- | w 05 +B.0V = 81 o1 Fl = 0a o-4----$--_-L_ Himaok | =50 t 02 i Casta t=-- approx +40V = 12V Bus for tg and t;, Dy is disconnected a aad 2= 0" 0.07 2N65296,2N6297 (PNF} Y, 6 10n8 DUTY CYCLE 1.0% 0.04 0.06 0.1 0.2 04 O06 10 20 40 For NPN test circuit, reverse all polarities. Ic, COLLECTOR CURRENT (AMP) 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-352 REV: --