VS-4CSH02HM3 www.vishay.com Vishay Semiconductors Hyper Fast Rectifier, 2 x 2 A FRED Pt(R) FEATURES * Hyper fast recovery time, reduced Qrr, and soft recovery * 175 C maximum operating junction temperature K * Specified for output and snubber operation 1 K Anode 1 * Low forward voltage drop Cathode Anode 2 * Low leakage current 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) * AEC-Q101 qualified, meets JESD 201 class 2 whisker test * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package SMPC (TO-277A) IF(AV) 2x2A VR 200 V VF at IF 0.75 V trr (typ.) 24 ns TJ max. 175 C Diode variation Dual die State of the art hyper fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyper fast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current TEST CONDITIONS VRRM per device per diode per device per diode Operating junction and storage temperatures IF(AV) IFSM VALUES UNITS 200 V 4 TSp = 165 C 2 A 90 TJ = 25 C 50 TJ, TStg -65 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 2 A - 0.88 0.95 IF = 2 A, TJ = 125 C - 0.75 0.82 VR = VR rated - - 2 TJ = 125 C, VR = VR rated - 1 8 VR = 200 V - 8 - IR = 100 A UNITS V A pF Revision: 16-May-17 Document Number: 94973 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4CSH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/s, VR = 30 V - 24 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 C - 16 - - 22 - - 2 - - 3 - TJ = 125 C Peak recovery current TJ = 25 C IRRM Reverse recovery charge TJ = 125 C Qrr IF = 2 A dIF/dt = 200 A/s VR = 160 V UNITS ns A TJ = 25 C - 16 - TJ = 125 C - 30 - MIN. TYP. MAX. UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -65 - 175 C Thermal resistance, junction to solder pad, per diode RthJ-Sp - 4.5 5.5 C/W Approximate weight g oz. Case style SMPC (TO-277A) 100 JCH2 100 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Marking device 0.1 0.0035 TJ = 175 C 10 1 TJ = 150 C TJ = 125 C 175 C 10 1 150 C 125 C 0.1 0.01 25 C 0.001 TJ = 25 C 0.1 0.0001 0.4 0.8 1.2 1.6 2.0 2.4 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-May-17 Document Number: 94973 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4CSH02HM3 www.vishay.com Vishay Semiconductors 3 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 2.5 2 1 0.5 0 1 0 50 100 150 0 200 0.5 1 1.5 2 2.5 3 3.5 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 35 30 175 25 DC 170 165 125 C 20 trr (ns) Allowable Case Temperature (C) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1.5 15 25 C Square wave (D = 0.50) 80 % rated VR applied 10 160 IF = 2 A 5 See note (1) 155 0 0 0.5 1 1.5 2 2.5 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 45 40 125 C Qrr (nC) 35 30 25 25 C 20 15 IF = 2 A 10 100 1000 dIF/dt (A/s) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 16-May-17 Document Number: 94973 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4CSH02HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 4 C S H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: C = common cathode 4 - S = SMPC package 5 - Process type, H = hyper fast recovery 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-4CSH02HM3/86A 1500 1500 7" diameter plastic tape and reel VS-4CSH02HM3/87A 6500 6500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95570 Part marking information www.vishay.com/doc?95565 Packaging information www.vishay.com/doc?88869 Revision: 16-May-17 Document Number: 94973 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-277A (SMPC) DIMENSIONS in inches (millimeters) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC(R) TO-277A Revision: 03-Sep-14 Document Number: 95570 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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