BC879,112 - NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 May 28 2004 Nov 05

DISCRETE SEMICONDUCTORS

BC875; BC879

NPN Darlington transistors

ook, halfpage

M3D186

2004 Nov 05 2

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BC875; BC879

FEATURES

•High DC current gain (min. 1000)

•High current (max. 1 A)

•Low voltage (max. 80 V)

•Integrated diode and resistor.

APPLICATIONS

•Relay drivers.

DESCRIPTION

NPN Darlington transistor in a TO-92 (SOT54) plastic

package. PNP complement: BC878.

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

handbook, halfpage

MAM307

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC875 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

BC879

2004 Nov 05 3

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BC875; BC879

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC875 −60 V

BC879 −100 V

VCES collector-emitter voltage VBE =0 V

BC875 −45 V

BC879 −80 V

VEBO emitter-base voltage open collector −5V

ICcollector current (DC) −1A

ICM peak collector current −2A

IBbase current (DC) −0.2 A

Ptot total power dissipation Tamb ≤25 °C; note 1 −0.83 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 150 K/W

2004 Nov 05 4

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BC875; BC879

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES collector-emitter cut-off current VBE =0 V

BC875 VCE =45V −−50 nA

BC879 VCE =80V −−50 nA

IEBO emitter-base cut-off current VEB =4V; I

C=0 A −−50 nA

hFE DC current gain VCE = 10 V; see Fig.2

IC= 150 mA 1000 −−

IC= 0.5 A 2000 −−

VCEsat collector-emitter saturation voltage IC= 0.5 A; IB= 0.5 mA −−1.3 V

IC= 1 A; IB=1mA −−1.8 V

VBEsat base-emitter saturation voltage IC= 1 A; IB=1mA −−2.2 V

fTtransition frequency VCE =5V; I

C= 0.5 A; f = 100 MHz −200 −MHz

Switching times (between 10% and 90% levels)

ton turn-on time ICon = 500 mA; IBon = 0.5 mA;

IBoff =−0.5 mA −500 −ns

toff turn-off time −1300 −ns

Fig.2 DC current gain; typical values.

VCE =10V.

handbook, full pagewidth

5000

1000

2000

3000

4000

MGD838

10−11IC (mA)

hFE

10 102103

2004 Nov 05 5

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BC875; BC879

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 97-02-28

04-06-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2004 Nov 05 6

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BC875; BC879

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no license or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Contact information

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Printed in The Netherlands R75/05/pp7 Date of release: 2004 Nov 05 Document order number: 9397 750 13576