VUO 70-16NO7 IdAV = 70 A VRRM = 1600 V Three Phase Rectifier Bridge VRSM VRRM V V 1700 1600 A Types E D C VUO 70-16NO7 B Symbol Conditions IdAV TC = 100C, module IFSM TVJ = 45C VR = 0 I2t Maximum Ratings 70 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2s A2s -40...+150 150 -40...+125 C C C 2500 3000 V~ V~ TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Conditions IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM < < 0.5 10 mA mA VF IF TVJ = 25C < 1.7 V VT0 rT For power-loss calculations only 0.8 8 V m RthJC per per per per 1.45 0.242 1.9 0.317 K/W K/W K/W K/W 16.1 7.5 50 mm mm m/s2 RthJH dS dA a t = 1 min t=1s 5 15% 44 15% 110 = 150 A Nm lb.in. Features * * * * * Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop 1/4" fast-on power terminals Applications * * * * Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Small and light weight g Characteristic Values diode; DC current module diode, DC current module Creeping distance on surface Creepage distance in air Max. allowable acceleration Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100709a 1-2 http://store.iiic.cc/ VUO 70-16NO7 I F(OV) -----I FSM 30 IFSM (A) TVJ=45C TVJ=150C A 25 T=150C 550 1.6 20 1.4 15 1.2 4 10 2 As 500 10 TVJ=45C 3 TVJ=150C 1 10 0 V RRM 0.8 5 1/2 V RRM T=25C IF 0 VF 0.6 V 1 1 V RRM 10 2 2 1 1.5 0.4 10 Fig. 1 Forward current versus voltage drop per diode 0 10 1 2 t[ms] 10 4 t [ms] 6 10 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 I2dt versus time (1-10ms) per diode or thyristor 100 200 [W] TC PSD 41 105 0.38 0.26 175 = RTHCA [K/W] 0.51 80 DC [A] sin.180 rec.120 110 rec.60 60 150 rec.30 115 125 0.76 120 40 125 100 1.26 130 75 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 20 135 2.76 140 145 IdAV 0 50 C 20 IFAVM Fig. 4 60 0 [A] 40 50 100 Tamb 100 150 200 TC(C) 150 150 [K] Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 3 K/W Z thJK 2 Z thJC 1 Zth 0.01 Fig. 6 0.1 t[s] 1 10 Transient thermal impedance per diode/thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100709a 2-2 http://store.iiic.cc/