TPSMB15A-E3/52T - VISHAY

TPSMB6.8A thru TPSMB43A

www.vishay.com Vishay General Semiconductor

Revision: 06-Dec-2018 1Document Number: 88406

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Surface Mount PAR® Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

•T

J = 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: SMB (DO-214AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified



(“_X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal

(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

PRIMARY CHARACTERISTICS

VBR 6.8 V to 43 V

VWM 5.8 V to 36.8 V

PPPM 600 W

IFSM 75 A

TJ max. 185 °C

Polarity Uni-directional

Package SMB (DO-214AA)

SMB (DO-214AA)

Available

MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2) PPPM 600 W

Peak pulse current with a 10/1000 μs waveform (fig. 3) (1) IPPM See table next page A

Peak forward surge current 8.3 ms single half sine-wave (2)(3) IFSM 75 A

Maximum instantaneous forward voltage at 50 A (2)(3) VF3.5 V

Operating junction and storage temperature range TJ, TSTG -65 to +185 °C

TPSMB6.8A thru TPSMB43A

www.vishay.com Vishay General Semiconductor

Revision: 06-Dec-2018 2Document Number: 88406

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent

(2) Surge current waveform per fig. 3 and derated per fig. 2

(3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))

(4) All terms and symbols are consistent with ANSI/IEEE C62.35

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

DEVICE



TYPE

DEVICE

MARKING

CODE

BREAKDOWN

VOLTAGE

(1)

AT I

(V)

TEST

CURRENT

(mA)

STAND-OFF

VOLTAGE

(V)

MAXIMUM

REVERSE

LEAKAGE

AT V

(μA)

MAXIMUM

REVERSE

LEAKAGE

AT V

= 150 °C

(μA)

MAXIMUM

PEAK PULSE

SURGE

CURRENT

PPM (2)

(A)

MAXIMUM

CLAMPING

VOLTAGE

AT I

PPM

(V)

TYPICAL

TEMP.

COEFFICIENT

OF V

(3)



(%/°C)

MIN. NOM. MAX.

TPSMB6.8A KEP 6.45 6.80 7.14 10 5.8 500 1000 57.1 10.5 0.047

TPSMB7.5A KGP 7.13 7.50 7.88 10 6.4 250 500 53.1 11.3 0.052

TPSMB8.2A KKP 7.79 8.20 8.61 10 7.02 100 200 49.6 12.1 0.056

TPSMB9.1A KMP 8.65 9.10 9.55 1 7.78 25 50 44.8 13.4 0.060

TPSMB10A KPP 9.5 10.0 10.5 1 8.55 5 20 41.4 14.5 0.064

TPSMB11A KRP 10.5 11.0 11.6 1 9.4 2 5 38.5 15.6 0.067

TPSMB12A KTP 11.4 12.0 12.6 1 10.2 2 5 35.9 16.7 0.070

TPSMB13A KVP 12.4 13.0 13.7 1 11.1 2 5 33 18.2 0.072

TPSMB15A KXP 14.3 15.0 15.8 1 12.8 1 5 28.3 21.2 0.076

TPSMB16A KZP 15.2 16.0 16.8 1 13.6 1 5 26.7 22.5 0.078

TPSMB18A LEP 17.1 18.0 18.9 1 15.3 1 5 23.8 25.2 0.080

TPSMB20A LGP 19 20.0 21 1 17.1 1 5 21.7 27.7 0.082

TPSMB22A LKP 20.9 22.0 23.1 1 18.8 1 5 19.6 30.6 0.084

TPSMB24A LMP 22.8 24.0 25.2 1 20.5 1 5 18.1 33.2 0.085

TPSMB27A LPP 25.7 27.0 28.4 1 23.1 1 5 16 37.5 0.087

TPSMB30A LRP 28.5 30.0 31.5 1 25.6 1 5 14.5 41.4 0.088

TPSMB33A LTP 31.4 33.0 34.7 1 28.2 1 5 13.1 45.7 0.089

TPSMB36A LVP 34.2 36.0 37.8 1 30.8 1 5 12 49.9 0.090

TPSMB39A LXP 37.1 39.0 41.0 1 33.3 1 5 11.1 53.9 0.091

TPSMB43A LZP 40.9 43.0 45.2 1 36.8 1 5 10.1 59.3 0.092

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

TPSMB6.8AHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel

TPSMB6.8AHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel

TPSMB6.8AHM3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel

TPSMB6.8AHM3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel

TPSMB6.8A thru TPSMB43A

www.vishay.com Vishay General Semiconductor

Revision: 06-Dec-2018 3Document Number: 88406

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

Fig. 4 - Typical Junction Capacitance

Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current

0.1

1.0

100

Non-Repetitive Pulse

Waveform shown in Fig. 3

= 25 °C

0.2 x 0.2" (5.0 x 5.0 mm)

Copper Pad Areas

0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms

PPM

- Peak Pulse Power (kW)

- Pulse Width (s)

0 50 100

100

150 200

TJ - Initial Temperature (°C)

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage, %

100

150

= 10 µs

Peak Value

IPPM

Half Value -

IPPM

10/1000 µs Waveform

as defined by R.E.A.

01.0 2.0 3.0 4.0

t - Time (ms)

PPM

- Peak Pulse Current, % I

RSM

= 25 °C

Pulse Width (t

)

is defined as the Point

where the Peak Current

decays to 50 % of I

PPM

100

1000

10 000

1 10 100

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

VR measured

at Zero Bias

VR measured at

Stand-Off Voltage, VWM

- Breakdown Voltage (V)

100

101 100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

TJ = TJ max.

8.3 ms Single Half Sine-Wave

TPSMB6.8A thru TPSMB43A

www.vishay.com Vishay General Semiconductor

Revision: 06-Dec-2018 4Document Number: 88406

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.012(0.305)

0.006(0.152)

0.008(0.2)

0.180(4.57)

0.160(4.06)

0.155 (3.94)

0.130(3.30)

0.086(2.20)

0.077(1.95)

0.220(5.59)

0.205(5.21)

0.060(1.52)

0.030(0.76)

0.096(2.44)

0.084(2.13)

DO-214AA (SMB)

0 (0)

Cathode Band

0.085 (2.159)

MAX.

0.220 REF.

0.086 (2.18)

MIN.

0.060 (1.52)

MIN.

Mounting Pad Layout

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 01-Jan-2019 1Document Number: 91000

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