DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT754 series Schottky barrier (double) diodes Product specification 1999 Aug 05 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series PINNING FEATURES * Very low forward voltage BAT754 PIN * Guard ring protected * Small plastic SMD package * Low diode capacitance. A C S 1 a k1 a1 a1 2 n.c. k2 a2 k2 3 k 3 1 2 MLC360 a1, a2 k1, k2 k1, a2 APPLICATIONS * Ultra high-speed switching * Voltage clamping handbook, 2 columns Fig.3 3 BAT754A diode configuration (symbol). * Protection circuits * Blocking diodes * Low power consumption applications, e.g. hand-held applications. 3 1 2 1 Top view DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. Fig.1 TYPE NUMBER MLC359 Fig.4 BAT754C diode configuration (symbol). 3 MARKING CODE BAT754 2K BAT754A 2L BAT754C 2M BAT754S 2N 1999 Aug 05 MGC421 Simplified outline (SOT23) and pin configuration. MARKING 1 3 2 n.c. 1 MLC357 Fig.2 2 BAT754 single diode configuration (symbol). 2 2 MLC358 Fig.5 BAT754S diode configuration (symbol). Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode - 30 V - 200 mA - 300 mA - 600 mA storage temperature -65 +150 C junction temperature - 125 C operating ambient temperature -65 +125 C VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current tp 1 s; 0.5 IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method Tstg Tj Tamb ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA - 200 mV IF = 1 mA - 260 mV IF = 10 mA - 340 mV IF = 30 mA - 420 mV IF = 100 mA 600 - mV IR reverse current VR = 25 V; note 1; see Fig.7 - 2 A Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.8 - 10 pF Note 1. Pulse test: tp = 300 s; 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT23 standard mounting conditions. 1999 Aug 05 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series GRAPHICAL DATA MSA892 IF IR (A) (1) (2) (3) (mA) 10 MSA893 10 3 3 10halfpage handbook, (1) 10 2 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 0 1.2 10 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.6 Fig.7 Forward current as a function of forward voltage; typical values. MSA891 15 Cd (pF) 10 5 0 0 10 20 V R (V) 30 f = 1 MHz; Tamb = 25 C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1999 Aug 05 4 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Aug 05 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 05 6 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series NOTES 1999 Aug 05 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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