BPX43
Vishay Semiconductors
1 (6)
Rev. 2, 20-May-99 www.vishay.com
Document Number 81534
Silicon NPN Phototransistor
Description
BPX43 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermeti-
cally sealed metal case with a glass lens.
A superior linearity of photocurrent vs. irradiation
makes it ideal for linear applications. A base terminal
is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed TO–18 case
D
Lens window
D
Angle of half sensitivity ϕ = ± 15
°
D
Exact central chip alignment
D
Base terminal available
D
Very high photo sensitivity
D
High linearity
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
94 8402
Applications
Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range
light barriers with additional optics, optical switches, alarm systems.
Absolute Maximum Ratings
Tamb = 25
_
CParameter Test Conditions Symbol Value Unit
Collector Base Voltage VCBO 80 V
Collector Emitter Voltage VCEO 70 V
Emitter Base Voltage VEBO 7 V
Collector Current IC50 mA
Peak Collector Current tp
x
10
m
s ICM 200 mA
Total Power Dissipation Tamb
x
25
°
C Ptot 250 mW
Junction Temperature Tj125
°
C
Operating Temperature Range Top –55...+125
°
C
Storage Temperature Range Tstg –55...+125
°
C
Soldering Temperature t
x
5 s, distance from
touching border
y
2 mm Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 400 K/W
Thermal Resistance Junction/Case RthJC 150 K/W
BPX43
Vishay Semiconductors
2 (6) Rev. 2, 20-May-99
www.vishay.com Document Number 81534
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage IC = 1 mA V(BR)CE
O70 V
Collector Dark Current VCE = 25 V, E = 0 ICEO 10 200 nA
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 23 pF
Emitter Base Capacitance VEB = 0 V, f = 1 MHz, E = 0 CEBO 47 pF
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E = 0 CCBO 41 pF
Collector Light Current Ee = 0.5 mW/cm2,
l
= 950 nm, VCE = 5 V Ica 0.8 mA
Temp. Coefficient of Ica
l
= 950 nm TKIca 1 %/K
Base Light Current Ee = 0.5 mW/cm2,
l
= 950 nm, VCB = 5 V Iba 10
m
A
Angle of Half Sensitivity ϕ±15 deg
Wavelength of Peak Sensitivity
l
p920 nm
Range of Spectral Bandwidth
l
0.5 630...1040 nm
Collector Emitter Saturation
Voltage Ee = 0.5 mW/cm2,
l
= 950 nm, IC = 0.1 mA VCEsat 0.15 0.3 V
Type Dedicated Characteristics
Tamb = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Current Gain VCE= 5 V, BPX38–4 B 330
CE
IC = 1 mA BPX38–5 B 520
BPX38–6 B 650
Collector Light Current Ee=0.5 mW/cm
2
, BPX38–4 Ica 0.5 0.7 1.0 mA
g
e
l
=950nm, VCE=5V BPX38–5 Ica 0.8 1.25 1.6 mA
BPX38–6 Ica 1.25 2 mA
Rise Time/ Fall Time VCE=5V, IC=1mA, BPX38–4 tr, tf15
m
s
CE C
RL=1k
W
l
=820nm BPX38–5 tr, tf20
m
s
BPX38–6 tr, tf25
m
s
BPX43
Vishay Semiconductors
3 (6)
Rev. 2, 20-May-99 www.vishay.com
Document Number 81534
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0 25 50 75 100
0
200
400
800
150
94 8342
600
125
Tamb – Ambient Temperature ( °C )
P – Total Power Dissipation ( mW )
tot
RthJC
RthJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8343
20
I – Collector Dark Current ( nA )
CEO
Tamb – Ambient Temperature ( °C )
100
101
102
103
104
106
105
150
50 100
VCE=20V
E=0
Figure 2. Collector Dark Current vs.
Ambient Temperature
94 8344
0 50 100 150
Tamb – Ambient Temperature ( °C )
0
0.5
1.0
1.5
2.0
3.5
I – Relative Collector Current
ca rel
2.5
3.0
VCE=5V
Ee=1mW/cm2
l
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01 0.1 1
0.01
0.1
1
10
100
I – Collector Light Current ( mA )
ca
Ee – Irradiance ( mW/cm2 )
10
94 8369
VCE=5V
l
=950nm
6
5
4
Figure 4. Collector Light Current vs.
Irradiance
0.1 1 10
0.1
1
10
I – Collector Light Current ( mA )
ca
VCE – Collector Emitter Voltage ( V )
100
94 8370
Ee=1mW/cm2
0.5mW/cm2
0.2mW/cm2
0.1mW/cm2
0.05mW/cm2
0.02mW/cm2
BPX43-5
l
=950nm
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.01 0.1 1 10
0
200
400
600
800
B – Amplification
IC – Collector Current ( mA )
100
94 8363
VCE=5V
6
5
4
Figure 6. Amplification vs. Collector Current
BPX43
Vishay Semiconductors
4 (6) Rev. 2, 20-May-99
www.vishay.com Document Number 81534
0.1 1 10
0
10
20
30
40
50
C – Collector Base Capacitance ( pF )
CBO
VCB – Collector Base Voltage ( V )
100
94 8364
f=1MHz
Figure 7. Collector Base Capacitance vs.
Collector Base Voltage
C – Emitter Base Capacitance ( pF )
EBO
93 8365 VEB – Emitter Base Voltage ( V )
0.1 1 10
0
20
40
60
80
f=1MHz
Figure 8. Emitter Base Capacitance vs.
Emitter Base Voltage
0.1 1 10
0
10
20
30
40
50
VCE – Collector Emitter Voltage ( V )
100
94 8366
C – Collector Emitter Capacitance ( pF )
CEO
f=1MHz
Figure 9. Collector Emitter Capacitance vs.
Collector Emitter Voltage
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )94 8367
l
800
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8371
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 11. Relative Radiant Sensitivity vs.
Angular Displacement
BPX43
Vishay Semiconductors
5 (6)
Rev. 2, 20-May-99 www.vishay.com
Document Number 81534
Dimensions in mm
96 12178
BPX43
Vishay Semiconductors
6 (6) Rev. 2, 20-May-99
www.vishay.com Document Number 81534
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
