Philips Components Data shoe BDS201/203/77 status __| Product specification NPN silicon epitaxial base power date ofissue | April 1991 transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors PIN DESCRIPTION in a miniature SMD envelope 1 base (SOT223) intended for general 2 collector purpose and switching applications. 3 emitter PNP complements are 4 collector BDS202/204/78. QUICK REFERENCE DATA 4 SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT VosBo collector-base voltage open emitter BDS201 - 60 Vv BDS203 - 60 Vv BOS77 - 100 Vv VcEO collector-emitter voltage | open base BDS201 - 45 Vv BDS203 - 60 Vv BDS77 - 80 Vv 1 | j2 3 Ic collector current average value | - 3 A Mssoo7 Top view lom collector current peak value - 7 A Prot total power dissipation Ttab = 25 C - 8 WwW note 1 - 1.5 WwW Tj junction temperature - 150 {C frte cut-off frequency ic =0.3V 25 - kHz Voce =3V; b Note MBBO12 e 1. Mounted on PCB Fig.1 Pin configuration. 421 MB 6653931 0034595 757Philips Components Product specification NPN silicon epitaxial base power transistors BDS201/203/77 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Vcso collector-base voltage open emitter BDS201 - 60 Vv BDS203 - 60 Vv BDS77 - 100 Vv VcEO collector-emitter voltage | open base BDS201 - 45 Vv BDS203 - 60 Vv BDS77 - 80 Vv VEBO emitter-base voltage open collector | - 5 Vv Io collector current average value | - 3 A Iom collector current peak value - 7 A ps base current - 1 A Prot total power dissipation Ttab = 25 C - 8 Ww Tstg storage temperature -65 | +150 | C range Tj junction temperature - 150 C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS | NOM. | UNIT Pith jt from junction to tab 15.5 | KAW Rth j-a from junction to ambient | on PCB 83.3 | KAW Aaed 1001 429 WB 6653931 0034595 b13Philips Components Product specification NPN silicon epitaxial base power transistors BDS201/203/77 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ViBRYCEO collector-emitter breakdown lp = 0; Io =200 mA voltage BDS201 - - 45 Vv BDS203 - - 60 v BDS77 - - 80 Vv IcEO collector cut-off current lg = 0; - - 0.2 mA Voce = 30V IcBo collector cut-off current le = 0; - - 1 mA Voce = 40 V; T = 150 C leBo emitter cut-off current Io = 0; - - 0.5 mA Ven =5V Vee base-emitter voltage Ic =3A; - : 1.5 Vv -VceE = 2V; note 1 VCE sat collector-emitter saturation Io =3 A; - - 1 Vv voltage Ip = 0.3 A; note 1 VoE sat collector-emitter saturation ic = 6 A; - - 1.8 Vv voltage Ip = 0.6 A; note 1 VBE sat collector-emitter saturation Ic = 6A; - - 2.1 vV voltage Ip = 0.6 A; note 1 Nre DC current gain Ic =3A; 30 - - Voce = 2 V; note 1 (BDS201) hee DC current gain Ic =2A; 30 - - VoE=2V; note 1 (BDS203/77) fr transition frequency f= 1 MHz; 7 - - MHz lo = 0.3 A; Voce =3V fre cut-off frequency Ic = 0.3 A; 25 - - kHz VcE=3 V ton switching times le on= 2 A; - - 1 BS turn-on time IB on = lB off = 0.2 A; Voc =20V tott switching times - 3 us turn-off time Note +. Measured under pulse conditions: tp < 300 ys, duty cycle < 2%. Apri 1991 Mm 6653931 0034597 SST 423Philips Components Product specification NPN silicon epitaxial base power transistors BDS201/203/77 MCBS79 100 Ic (a) 0.01 Vee ) I. Region of permissible DC operation. li. Permissible extension for repetitive pulse operation. Fig.2 Safe operating area; Trap = 25 C. Aaclannas 424 MB 6653931 0034598 49bPhilips Components Product specification NPN silicon epitaxial base power transistors BDS201/203/77 102 MCBS841 Zth Jo (K/) 10 1 10-1 10-5 tele tp MEB0S4 T T Fig.3 Pulse power rating chart. 103 7Z6240).1 re Tmb= 125 102 19 107? 19-! 1 Ig (Al 10 Fig.4 DC current gain; Vce = 2 V. April 1991 425 MB 6653931 0034599 3ecPhilips Components Product specification NPN silicon epitaxial base power transistors BDS201/203/77 PACKAGE OUTLINE Dimensions in mm t | + 170 1.45 f 4 0.73 0.67 6.7 0.32 6.3 0.24 31 Vin 29 | S2O1A q 4 a j | 7.3 33 (6.7 1 { i | TT} i dib Uis | 1.05, 0.80 x " 0.85 -Es+! 0.60 | sires + 73} +| saoas Fig.5 SOT223. October 1980 426 MH 6653931 0034b00 9174 mm