BUZ 331 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 331 500 V 8A 0.8 TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 35 C Values Unit A 8 Pulsed drain current IDpuls TC = 25 C 32 Avalanche current,limited by Tjmax IAR 8 Avalanche energy,periodic limited by Tjmax EAR 13 Avalanche energy, single pulse EAS mJ ID = 8 A, VDD = 50 V, RGS = 25 L = 16 mH, Tj = 25 C 570 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 331 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 500 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 5.5 A Semiconductor Group nA - 2 0.6 0.8 07/96 BUZ 331 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS 2 * ID * RDS(on)max, ID = 5.5 A Input capacitance 5 pF - 1500 2300 - 180 270 - 65 100 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S gfs td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 20 30 - 65 100 - 260 340 - 75 100 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 331 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 20 V 1.1 1.2 trr ns - 380 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 5 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 10 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A C - 4 4 - 07/96 BUZ 331 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 9 130 W A 110 Ptot ID 100 90 7 6 80 5 70 60 4 50 3 40 2 30 20 1 10 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W tp = 8.2s 10 s A ID ZthJC 100 s 10 0 V DS /I D 10 1 = 1 ms (o n) 10 -1 R DS D = 0.50 10 ms 10 0.20 0 0.10 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp 5 07/96 s 10 0 BUZ 331 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 18 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 2.6 Ptot = 125Wl kj i hg f A ID b c d 2.2 VGS [V] a 4.0 14 12 d 10 8 c 6 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 RDS (on) l 4 2.0 1.8 1.6 1.4 1.2 k 10.0 20.0 1.0 e 0.8 g f h i j 0.6 k b 0.4 V [V] = GS 2 a 4.5 4.0 0.2 a 0 0 a e b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 j h i k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 20 24 28 V 34 0 2 4 6 8 10 12 14 VDS Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max VDS2 x ID x RDS(on)max ID A 18 A 9 ID 10 12 A S 10 8 gfs 9 7 8 6 7 5 6 4 5 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0 0 1 2 3 4 5 6 7 ID 6 07/96 BUZ 331 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 5.5 A, VGS = 10 V 3.4 4.6 V 98% 4.0 RDS (on) 2.8 VGS(th) 2.4 3.6 typ 3.2 2.8 2.0 2.4 1.6 2% 2.0 98% 1.2 1.6 typ 1.2 0.8 0.8 0.4 0.4 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Typ. capacitances 160 Tj Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss 10 -1 10 0 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS Semiconductor Group 10 -1 0.0 7 07/96 3.0 BUZ 331 Avalanche energy EAS = (Tj) parameter: ID = 8 A, VDD = 50 V RGS = 25 , L = 16 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 12 A 600 16 mJ V 500 EAS VGS 450 12 400 10 350 300 0,2 VDS max 8 0,8 VDS max 250 6 200 150 4 100 2 50 0 20 40 60 80 100 120 C 160 Tj 0 0 20 40 60 80 nC QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 600 V 580 V(BR)DSS570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 110 BUZ 331 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96