2006-2012 Microchip Technology Inc. DS22019B-page 1
MCP1406/07
Features
• High Peak Output Current: 6.0A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output S tage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typi cal)
• Matched Rise/Fa ll Times
• Low Supply Current:
- With Logic ‘1’ Inpu t – 130 µA (typical)
- With Logic ‘0’ Input – 35 µA (typical)
• Latch-U p P rotec te d: Wi ll Withstand 1.5 A Rev ers e
Current
• Logic Input Wil l W ith st and Neg ati ve Swin g Up to 5 V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and 8-Pin 6x5
DFN Packages
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP1406/07 devices are a family of buffers/
MOSFET drivers that feature a single-output with 6A
peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances (in both the on
and off states) to ensure that intended state of the
MOSFETs will not be af fected, even by large transients.
The input to the MCP1406/07 may be driven directly
from either TTL or CMOS (3V to 18V).
These devices are highly latch-up resistant under any
conditions thatwithin their power and voltage ratings.
They ar e not subject to damag e when up to 5V of nois e
spiking (of either polarity) occurs on the ground pin.
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide-
temperature-range application.
6A High-Speed Power MOSFET Drivers
MCP1406/07
DS22019B-page 2 2006-2012 Microchip Technology Inc.
Package Types
1
2
3
45
6
7
8
VDD VDD
OUT
OUT
GND GND
INPUT
NC
8-Pin PDIP/SOIC
MCP1407MCP1406
VDD
OUT
OUT
GND
1
2
3
45
6
7
8
8-Pin 6x5 DFN
VDD
GND
INPUT
NC
5-Pin TO-22 0
VDD
OUT
OUT
GND
MCP1407MCP1406
VDD
OUT
OUT
GND
Tab is common to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is el ectrically isolated.
1
2
3
45
6
7
8
VDD
GND
INPUT
NC
1
2
3
45
6
7
8
VDD
GND
INPUT
NC
VDD
GND
INPUT
OUT
GND
12345
MCP1406
VDD
GND
INPUT
OUT
GND
12345
MCP1407
2006-2012 Microchip Technology Inc. DS22019B-page 3
MCP1406/07
Functional Block Diagram(1)
Effective
Input C = 25 pF
MCP1406 Inve r ting
MCP1407 Non-Inv ertin g
Input
GND
VDD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: Unused inputs should be grounded.
130 µA
Output
Output
MCP1406/07
DS22019B-page 4 2006-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage................................................................+20V
Input Volt age. ..... .... .. .. .. .. .. ....... .. ..(VDD + 0.3V) to (GND – 5V)
Input Current (VIN>VDD)................................................50 mA
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to m aximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V
Logic ‘0’, Low Input Voltage VIL —1.30.8V
Input Current IIN –10 — 10 µA 0VVINVDD
Input Voltage VIN -5 — VDD+0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stanc e, High ROH —2.12.8IOUT = 10 mA, VDD = 18V
Output Re si stanc e, Low ROL —1.52.5IOUT = 10 mA, VDD = 18V
Peak Output Current IPK —6—AV
DD 18V (Note 2)
Contin uou s Ou tput Current IDC 1.3 A Note 2, Note 3
Latch-Up Prote cti on With -
stand Reverse Current IREV — 1.5 — A Duty cycle2%, t 300 µsec.
Switching T ime (Note 1)
Rise Time tR—2030nsFigure 4-1, Figure 4-2
CL = 2500 pF
Fall Time tF—2030nsFigure 4-1, Figure 4-2
CL = 2500 pF
Delay Time tD1 —4055nsFigure 4-1, Figure 4-2
Delay Time tD2 —4055nsFigure 4-1, Figure 4-2
Power Supply
Supply Voltage VDD 4.5 — 18.0 V
Power Supply Current IS—130250µAV
IN = 3V
IS—35100µAV
IN = 0V
Note 1: Switching times ens ured by design.
2: Tested during characterization, not production tested.
3: Valid for AT and MF packages only. TA = +25°C
2006-2012 Microchip Technology Inc. DS22019B-page 5
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN –10 — +10 µA 0VVINVDD
Input Voltage VIN -5 — VDD+0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC TEST
Low Ou tput Voltage VOL — — 0.025 V DC TEST
Output Re si stanc e, High ROH —3.05.0IOUT = 10 mA, VDD = 18V
Output Re si stanc e, Low ROL —2.35.0IOUT = 10 mA, VDD = 18V
Switching T ime (Note 1)
Rise Time tR—2540nsFigure 4-1, Figure 4-2
CL = 2500 pF
Fall Time tF—2540nsFigure 4-1, Figure 4-2
CL = 2500 pF
Delay Time tD1 —5065nsFigure 4-1, Figure 4-2
Delay Time tD2 —5065nsFigure 4-1, Figure 4-2
Power Supply
Supply Voltage VDD 4.5 — 18.0 V
Power Supply Current IS— 200 500 µA VIN = 3V
— 50 150 VIN = 0V
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA–40 — +125 °C
Maximum Junction Temperatur e TJ——+150°C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN JA — 33.2 — °C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP JA — 125 — °C/W
Thermal Resistance, 8L-SOIC JA — 155 — °C/W
Thermal Resistance, 5L-TO-220 JA —71 —°C/W
MCP1406/07
DS22019B-page 6 2006-2012 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay vs.
Supply Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only . The performance ch aracteristics listed herei n are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
20
40
60
80
100
120
4 6 8 10 12 14 16 18
Supply Voltage (V)
Rise Time (ns)
100 pF
4,700 pF
1,000 pF 6,800 pF
2,500 pF
10,000 pF
8,200 pF
0
10
20
30
40
50
60
70
80
100 1000 10000
Capacitive Load (pF)
Rise Time (ns)
5V
15V
10V
0
5
10
15
20
25
30
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Rise and Fall Time (ns)
VDD = 18V tRISE
tFALL
0
10
20
30
40
50
60
70
80
4 6 8 10 12 14 16 18
Supply Voltag e ( V)
Fall Time (ns)
100 pF
4,700 pF
1,000 pF 6,800 pF
2,500 pF
10,000 pF 8,200 pF
0
10
20
30
40
50
60
70
100 1000 10000
Capacitive Load (pF)
Fall Time (ns )
5V
15V
10V
35
45
55
65
75
85
4 6 8 10 12 14 16 18
Supply Voltage (V)
Propagation Delay (ns)
VIN = 5V
tD1
tD2
2006-2012 Microchip Technology Inc. DS22019B-page 7
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
FIGURE 2-7: Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8: Propagation Delay Time vs.
Temperature.
FIGURE 2-9: Quiescent Current vs.
Supply Voltage.
FIGURE 2-10: Quiescent Current vs.
Temperature.
FIGURE 2-11: Input Threshold vs. Supply
Voltage.
FIGURE 2-12: I nput Threshold vs.
Temperature.
25
50
75
100
125
150
175
200
2345678910
Input Amplitude (V)
Propagation Delay (ns)
VDD = 12V
tD1
tD2
30
35
40
45
50
55
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Propaga tion Delay (ns)
VDD = 18V
VIN = 5V
tD1
tD2
0
20
40
60
80
100
120
140
160
180
4 6 8 1012141618
Supply Voltage (V)
Quiescent Current (µA)
INPUT = 1
INPUT = 0
0
50
100
150
200
250
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Quiescent Curr en t (µA)
Input = Low
VDD = 18V
Input = High
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
4 6 8 10 12 14 16 18
Supply Vo ltag e (V)
Input Threshold (V)
VHI
VLO
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Input Threshold (V)
VDD = 12V VHI
VLO
MCP1406/07
DS22019B-page 8 2006-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
FIGURE 2-13: Supply Current vs.
Capacitive Load .
FIGURE 2-14: Supply Current vs.
Capacitive Load .
FIGURE 2-15: Supply Current vs.
Capacitive Load .
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
0
25
50
75
100
125
150
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
500 kHz
1 MHz
200 kHz 100 kHz
VDD = 18V
50 kHz
0
25
50
75
100
125
150
100 1000 10000
Capacitive Load (pF)
Supply Cur r ent (mA)
500 kHz
1 MHz
200 kHz
100 kHz
VDD = 12V
50 kHz
2 MHz
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
500 kHz
1 MHz
200 kHz
100 kHz
VDD = 6V
50 kHz
2 MHz
0
20
40
60
80
100
120
10 100 1000
Frequency (kHz)
Supply Current (mA)
100 pF
4,700 pF
1,000 pF
6,800 pF
VDD = 18V
2,500 pF
10,000 pF
0
10
20
30
40
50
60
70
80
10 100 1000
Frequency (kHz)
Suppl y C u rrent (mA)
100 pF
4,700 pF
1,000 pF
6,800 pF
VDD = 12V
2,500 pF
10,000 pF
0
5
10
15
20
25
30
35
40
10 100 1000
Frequency (kHz)
Supply Curren t (mA)
100 pF
4,700 pF
1,000 pF
6,800 pF
VDD = 6V
2,500 pF
10,000 pF
2006-2012 Microchip Technology Inc. DS22019B-page 9
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
FIGURE 2-19: Output Resistance (Output
High) vs. Supply Voltage.
FIGURE 2-20: Output Resistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21: Crosso ve r Ene rg y vs .
Supply Voltage.
1
2
3
4
5
6
7
4 6 8 10 12 14 16 18
Supply Voltage (V)
R
OUT-HI
(:)
VIN = 2.5V (MCP1407)
VIN = 0V (MCP1406)
TJ= +125oC
TJ= +25oC
1
2
3
4
5
6
7
4 6 8 10 12 14 16 18
Supply Voltage (V)
R
OUT-LO
(:)
VIN = 0V (MCP1407)
VIN = 2.5V (MCP1406)
TJ= +125oC
TJ= +25oC
1.E-09
1.E-08
1.E-07
4 6 8 10 12 14 16 18
Supply Voltag e ( V)
Crossover Energy (A*sec)
10-8
10-9
10-10
MCP1406/07
DS22019B-page 10 2006-2012 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE(1)
3.1 Supply Input (VDD)
VDD is the bias su pply input for the M OSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with local capacitors. The bypass
capacitors provide a localized low-impedance path for
the peak currents that are to be provided to the load.
3.2 Control Input (INPUT)
The MOSFET driver input is a high-impedance, TTL/
CMOS-compatible input. The input also has hysteresis
betwee n the hig h and low i nput leve ls, allo wing the m to
be driven from slow rising and falling signals, and to
provide noise immunity.
3.3 Ground (GND)
Ground is th e devic e re turn pi n. The groun d p in sh oul d
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4 CMOS Push-Pull Output
(OUTPUT)
The output is a CMOS push-pull output that is capable
of sourcing peak currents of 6A (VDD = 18V). The l ow
output impedance ensures the gate of the external
MOSFET will stay in the intended state even during
large transients. The output pins also have reverse
current latch-up ratings of 1.5A.
3.5 Exposed Metal Pad
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
3.6 TO-220 Metal Tab
The met al tab on th e TO-220 package is at V DD poten-
tial. This metal tab is not intended to be the VDD con-
nection to MC P14 06/0 7. VDD sh ould be s u pp lie d us in g
the Supply Input pin of the TO-220.
8-Pin
PDIP, SOIC 8-Pin
DFN 5-Pin
TO-220 Symbol Description
11—V
DD Supply Input
2 2 1 INPUT Control Input
3 3 — NC No Connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT CMOS Push-Pull Output
7 7 — OUTPUT CMOS Push-Pull Output
883V
DD Supply Input
—PAD— NC
Exposed Metal Pad
——TABV
DD Metal Tab at VDD Potential
Note 1: Duplicate pins must be connected for proper operation.
2006-2012 Microchip Technology Inc. DS22019B-page 11
MCP1406/07
4.0 APPLICATION INFORMATION
4.1 General Information
MOSFET drivers are high-speed, high current devices
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In hig h f requenc y sw itch ing po wer sup plies , the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
4.2 MOSFET Driver Timing
The abil ity of a MOSFET driver to transition from a fully-
off st ate to a fully-on state are characterize d by the driv-
ers’ rise tim e ( t R), fall time (t F), a nd p rop agation delays
(tD1 and tD2). The MCP1406/07 family of devices is
able to make t his trans ition ve ry quick ly. Figure 4-1 and
Figure 4-2 show the test c irc uits an d timi ng wav eforms
used to verify the MCP1406/07 timing.
FIGURE 4-1: Inverting Driver Timing
Waveform.
FIGURE 4-2: Non-Inverting Driver Timing
Waveform.
4.3 Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge capaci-
tive loads quickly. For example, 2.25A are needed to
charge a 2500 pF load with 18V in 20 ns.
To operate the MOSFET driver over a wide frequency
range w ith l ow supply im pe da nce , a ceram ic a nd a l ow
ESR film capacitor are recommended to be placed in
paral lel between the drive r VDD and GND. A 1. 0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 1, 8 and 4, 5 should be used.
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
0.1 µF
+5V
10%
90%
10%
90%
10%
90%
18V
1µF
0V
0V
MCP1406
CL = 2500 pF
Input
Input
Output
tD1 tFtD2
Output
tR
VDD = 18V
Ceramic
90%
Input
tD1 tF
tD2
Output tR
10%
10% 10%
+5V
18V
0V
0V
90%
90%
0.1 µF
1µF
MCP1407
CL = 2500 pF
Input Output
VDD = 18V
Ceramic
MCP1406/07
DS22019B-page 12 2006-2012 Microchip Technology Inc.
4.4 PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switchi ng circuit to p rovide proper device opera tion and
robustness of design. PCB trace loop area and induc-
tance should be minimized by the use of a ground
plane or grou nd trace lo cated un der the MO SFET gate
drive s ignals, separa te ana log and power g rounds, an d
local driver decoupling.
The MCP1 406 /07 devices h av e t w o p ins e ac h f or VDD,
OUTPUT, and GND. Both pins must be used for prop er
operation. This also lowers path inductance which will,
along with proper decoupling, help minimize ringing in
the circuit.
Placing a ground plane beneath the MCP1406/07 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5 Power Dissipation
The tot al internal power dissip ation in a MOSFET driver
is the summation of three separate power dissipation
elements.
4.5.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
4.5.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1406/07 devices have a quiescent current
draw when the input is high of 0.13 mA (typ) and
0.035 mA (typ) when the input is low. The quiescent
power dissipation is:
4.5.3 O PERATI NG POW ER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions; because, for a very
short peri od of tim e bot h MO SFETs in the out put s tage
are on simultaneously. This cross-conduction current
leads to a power dissipation, as described by the
following equation:
PTPLPQPCC
++=
Where:
PT = Total pow er di ssipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
PLfC
T
VDD2
=
Where:
f = Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
PQIQH DI
QL 1D–+VDD
=
Where:
IQH = Quiesc ent current in the high state
D = Duty cycle
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
PCC CC fVDD
=
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
VDD = MOSFET driver supply voltage
2006-2012 Microchip Technology Inc. DS22019B-page 13
MCP1406/07
5.0 PACKAGING INFORMATION
5.1 Package Marking Information (Not to Scale)
YYWWNNN
XXXXXXXXX
XXXXXXXXX
MCP1406
EAT
1210256
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Al phanume ric trac ea bility code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full M icroc hip p art numb er cann ot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
5-Lead TO-220 Example
PIN 1
NNN
PIN 1
MCP1406
E/MF
1210
256
8-Lead DFN-S (6x5x0.9 mm) Example
3
e
XXXXXXXX
XXXXXNNN
YYWW
E/P^^256
8-Lead PDIP (300 mil) Example
3
e
MCP1407
1210
3
e
MCP1406/07
DS22019B-page 14 2006-2012 Microchip Technology Inc.
5.1 Package Marking Information (Continue d)
8-Lead SOIC (3.90 mm) Example
NNN
256
MCP1406E
SN^^1210
3
e
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Al phanumeric tracea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the fu ll Microc hip p art nu mber ca nnot be m arked on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
2006-2012 Microchip Technology Inc. DS22019B-page 15
MCP1406/07
E
Q
D
D1
H1
A
A1
A2
c
N
e
e1
b
123
L
CHAMFER
OPTIONAL
Pφ
MCP1406/07
DS22019B-page 16 2006-2012 Microchip Technology Inc.
!"#$ %&'(()* +
NOTE 2
A1
A
A3
NOTE 1 12
E
N
D
EXPOSED PAD
NOTE 1
21
E2
L
N
e
b
K
BOTTOM VIEW
TOP VIEW
D2
2006-2012 Microchip Technology Inc. DS22019B-page 17
MCP1406/07
MCP1406/07
DS22019B-page 18 2006-2012 Microchip Technology Inc.
,%-()*,
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
2006-2012 Microchip Technology Inc. DS22019B-page 19
MCP1406/07
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1406/07
DS22019B-page 20 2006-2012 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2006-2012 Microchip Technology Inc. DS22019B-page 21
MCP1406/07
+(+%.!-/0(()*+,1
MCP1406/07
DS22019B-page 22 2006-2012 Microchip Technology Inc.
NOTES:
2006-2012 Microchip Technology Inc. DS22019B-page 23
MCP1406/07
APPENDIX A: REVISION HISTORY
Revision B (May 2012)
The following is the list of modifications:
Removed the information referring to the Elec-
trostatic Discharge from the General Description
section.
Revision A (December 2006)
Original release of this document.
MCP1406/07
DS22019B-page 24 2006-2012 Microchip Technology Inc.
NOTES:
2006-2012 Microchip Technology Inc. DS22019B-page 25
MCP1406/07
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP1406: 6A High-Speed MOSFET Driver, Inverting
MCP1406T: 6A High-Speed MOSFET Driver, Inverting
(Tape and Ree l)
MCP1407: 6A High-Speed MOSFET Driver,
Non-Inverting
MCP1407T: 6A High-Speed MOSFET Driver,
Non-Inv erting (Tape and Reel)
Temperature Range: E = -40°C to +125°C
Package: * AT = TO-220, 5-Lead
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
PA = Plastic DIP, (300 mil body), 8-lead
SN = Plastic SOIC (150 mil Body), 8-Lead
* All package offerings are Pb Free (Lead Free)
Examples:
a) MCP1406-E/MF: 6A High-Speed MOSFET
Driver, Inverting
8LD DFN package.
b) MCP1406-E/AT: 6A High-Speed MOSFET
Driver, Inverting
5LD TO-220 package.
c) MCP1406-E/SN: 6A High-Speed MOSFET
Driver, Inverting
8LD SOIC package.
d) MCP1406-E/P: 6A High-Speed MOSFET
Driver, Inverting
8LD PDIP package.
e) MCP1406T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD DFN pkg.
f) MCP1406T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC pkg.
a) MCP1407-E/MF: 6A High-Speed MOSFET
Driver, Non-Inverting
8LD DFN package.
b) MCP1407-E/AT: 6A High-Speed MOSFET
Driver, Non-Inverting
5LD TO-220 package.
c) MCP1407-E/SN: 6A High-Speed MOSFET
Driver, Non-Inverting
8LD SOIC package.
d) MCP1407-E/P: 6A High-Speed MOSFET
Driver, Non-Inverting
8LD PDIP package.
e) MCP1407T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD DFN pkg.
f) MCP1407T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC pkg.
PART NO. XXX
PackageTemperature
Range
Device
XXX
Tape & Reel
MCP1406/07
DS22019B-page 26 2006-2012 Microchip Technology Inc.
NOTES:
2006-2012 Microchip Technology Inc. DS22019B-page 27
Information contained in this publication regarding device
applications a nd the lik e is provided only f or yo ur convenience
and may be supers ed ed by u pda t es . It is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PI C START,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2006-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-103-8
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that i ts family of products is one of t he most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• The re are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS22019B-page 28 2006-2012 Microchip Technology Inc.
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