IRLML5203PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free HEXFET(R) Power MOSFET Description Package Type IRLML5203TRPbF Micro3TM (SOT-23) RDS(on) max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Base Part Number VDSS 3 D S 2 Micro3TM Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML5203TRPbF Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -3.0 -2.4 -24 1.25 0.80 10 20 -55 to + 150 V mW/C V C Max. Units 100 C/W A W Thermal Resistance Parameter RJA 1 Maximum Junction-to-Ambient www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML5203PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- -1.0 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 98 VGS = -10V, ID = -3.0A m 165 VGS = -4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V 2.4 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- R G = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -1.3 -24 --- --- --- --- 17 12 -1.2 26 18 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML5203PbF 100 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V 10 1 -2.70V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 1 -2.70V RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C 1 TJ = 25 C V DS = -15V 20s PULSE WIDTH 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 100 Fig 2. Typical Output Characteristics 100 4.0 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3.0 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) 0.1 2.0 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP www.irf.com (c) 2014 International Rectifier ID = 3.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback April 28, 2014 IRLML5203PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 600 Ciss 400 200 Coss Crss 0 1 10 20 -VGS , Gate-to-Source Voltage (V) 800 12 8 4 0 4 8 12 16 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-24V VDS =-15V 16 0 100 ID = -3.0A TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback April 28, 2014 IRLML5203PbF 3.0 VDS -ID , Drain Current (A) VGS D.U.T. RG 2.0 RD - + VDD VGS Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) 0.0 tr t d(off) tf VGS 25 50 75 100 125 TC , Case Temperature ( C) 10% 150 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 0.14 0.13 0.12 0.11 0.10 ID = -3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -V GS, Gate -to -Source Voltage (V) RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance ( ) IRLML5203PbF 0.40 0.30 VGS = -4.5V 0.20 VGS = -10V 0.10 0.00 0 4 8 12 16 -I D , Drain Current (A) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V www.irf.com (c) 2014 International Rectifier IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Submit Datasheet Feedback April 28, 2014 IRLML5203PbF 30 -VGS(th) , Variace ( V ) 2.5 20 Power (W) ID = -250A 2.0 10 0 1.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature 7 www.irf.com (c) 2014 International Rectifier 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 15. Typical Power Vs. Time Submit Datasheet Feedback April 28, 2014 IRLML5203PbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L 6 5 D 3 6 ccc 2 B e A A1 A2 b c E E1 1 DIME NSIONS C B A D E E1 e 5 e1 L L1 0 aaa e1 bbb ccc 4 MILLIME T ERS MAX MIN 1.12 0.89 0.10 0.01 1.02 0.88 0.50 0.30 0.20 0.08 3.04 2.80 2.64 2.10 1.40 1.20 0.95 BSC 1.90 BSC 0.40 0.60 INCHES MIN MAX .044 .036 .0004 .0039 .035 .040 .0196 .0119 .0078 .0032 .119 .111 .103 .083 .048 .055 .0375 BSC .075 BSC .0158 .0236 0.25 BS C 0 8 0.10 0.20 0.15 .0118 BSC 0 8 .004 .008 .006 H A A2 L1 3X b A1 bbb aaa C C A B 3 S URF 0 7 3X L RECOMMENDED FOOT PRINT NOT ES 1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994. 0.972 3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES . 2.742 [.1079] 3. CONT ROLLING DIMENS ION: MILLIMET ER. 4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE. 5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H. 6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H. 7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE. 8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB. 0.95 [.0375] 0.802 3X [.031] 1.90 [.075] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE LEAD-FREE ASSEMBLY LOT CODE X = PART NUMBER CODE REFERENCE : A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303 S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y W WEEK 1 01 A 2011 2001 2012 2002 2 02 B 3 03 C 2013 2003 2014 2004 4 04 D 5 2015 2005 6 2016 2006 2017 2007 7 8 2018 2008 2019 2009 9 0 24 X 2020 2010 25 Y 26 Z X = IRLML2244 Y = IRLML2246 W = (27-52) IF PRECEDED BY A LETTER YEAR Z = IRFML9244 DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML5203PbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML5203PbF Qualification information Consumer Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level Micro3TM (SOT-23) RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date Comment 4/28/2014 * Updated data sheet with new IR corporate template. * Updated package outline & part marking on page 8. * Added Qualification table -Qual level "Consumer" on page 10. * Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 28, 2014