TSM080N03PQ56
Taiwan Semiconductor
1 Version: D1608
N-Channel Power MOSFET
30V, 73A, 8mΩ
FEATURES
● Low RDS(ON) to minimize conductive Losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switch
PRODUCT SUMMARY
PARAMETER
VALUE
UNIT
VDS
30
V
RDS(on) (max)
VGS = 10V
8
mΩ
VGS = 4.5V
12.5
Qg
7.2
nC
Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 1)
TC = 25°C
ID
73
A
TA = 25°C
14
Pulsed Drain Current (Note 1)
IDM
292
A
Single Pulse Avalanche Current (Note 2)
IAS
23
A
Single Pulse Avalanche Energy (Note 2)
EAS
26
mJ
Total Power Dissipation
TC = 25°C
PD
69
W
TC = 125°C
14
Total Power Dissipation
TA = 25°C
PD
2.6
W
TA = 125°C
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
PARAMETER
SYMBOL
LIMIT
UNIT
Thermal Resistance – Junction to Case
RӨJC
1.8
°C/W
Thermal Resistance – Junction to Ambient
RӨJA
48
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
PDFN56
TSM080N03PQ56
Taiwan Semiconductor
2 Version: D1608
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1
1.6
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VGS = 0V, VDS = 30V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
(Note 3)
VGS = 10V, ID = 14A
RDS(on)
--
6.5
8
mΩ
VGS = 4.5V, ID = 14A
--
9.5
12.5
Forward Transconductance (Note 3)
VDS = 5V, ID = 14A
gfs
--
30
--
S
Total Gate Charge
VGS = 10V, VDS = 15V,
ID = 14A
Qg
--
14.4
--
nC
Total Gate Charge
VGS = 4.5V, VDS = 15V,
ID = 14A
Qg
7.2
Gate-Source Charge
Qgs
--
2.6
--
Gate-Drain Charge
Qgd
--
3.3
--
Input Capacitance
VGS = 0V, VDS = 15V,
f = 1.0MHz
Ciss
--
843
--
pF
Output Capacitance
Coss
--
157
--
Reverse Transfer Capacitance
Crss
--
95
--
Gate Resistance
f = 1.0MHz, open drain
Rg
0.9
3
6
Ω
Turn-On Delay Time
VGS = 10V, VDS = 15V,
ID = 14A, RG = 3.3Ω
td(on)
--
4.8
--
ns
Rise Time
tr
--
12.5
--
Turn-Off Delay Time
td(off)
--
27.6
--
Fall Time
tf
--
8.2
--
Diode Forward Voltage (Note 3)
VGS = 0V, IS = 15A
VSD
--
--
1
V
Reverse Recovery Time
IS = 14A,
di/dt = 100A/μs
trr
--
16
--
ns
Reverse Recovery Charge
Qrr
--
8.3
--
nC
Notes:
1. Current limited by package.
2. L = 0.1mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 23A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM080N03PQ56 RLG
PDFN56
2,500pcs / 13” Reel
TSM080N03PQ56
Taiwan Semiconductor
3 Version: D1608
Normalized Gate Threshold
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Normalized Vth vs. TJ
On-Resistance vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Gate-Source Voltage
Maximum Safe Operating Area, Junction-to-Case
RDS(on), Drain-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
TJ, Junction Temperature (℃)
C, Capacitance (pF)
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Qg, Gate Charge (nC)
RDS(on), Drain-Source On-Resistance (Ω)
VGS, Gate to Source Voltage (V)
1
10
100
1000
0.1 1 10 100
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
RDS(ON)
SINGLE PULSE
RӨJC=1.8°C/W
T
C
=25
°
C
0
2
4
6
8
10
0 3 6 9 12 15
VDS=15V
ID=14A
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
CISS
COSS
CRSS
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 050 100 150
0.6
0.8
1
1.2
1.4
1.6
-50 050 100 150
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
3 4 5 6 7 8 9 10
ID=14A
TSM080N03PQ56
Taiwan Semiconductor
4 Version: D1608
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
t, Square Wave Pulse Duration (sec)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
RӨJC=1.8°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
TSM080N03PQ56
Taiwan Semiconductor
5 Version: D1608
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
TSM080N03PQ56
Taiwan Semiconductor
6 Version: D1608
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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