© 2004 IXYS All rights reserved DS99036B(07/04)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C3A
IDM TC= 25°C, pulse width limited by TJM 12 A
IAR TC= 25°C3A
EAR TC= 25°C 20mJ
EAS 700 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ ≤ 150°C, RG = 4.7 Ω
PDTC= 25°C 200 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
Switching (UIS)
zMolding epoxies meet UL 94 V-0
flammability classification
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1200 V
VGS(th) VDS = VGS, ID = 1.5 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C50µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 4.5 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
Power MOSFETs
VDSS =1200 V
ID25 =3A
RDS(on) = 4.5 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 300 ns
Preliminary Data Sheet
G
S
TO-263 (IXFA)
GDS
TO-220 (IXFP)
G = Gate D = Drain
S = Source TAB = Drain
IXFA 3N120
IXFP 3N120
D (TAB)
D (TAB)
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 3N120
IXFP 3N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.5 2.5 S
Ciss 1050 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 100 pF
Crss 25 pF
td(on) 17 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns
td(off) RG = 4.7 Ω (External), 32 n s
tf18 ns
Qg(on) 39 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9nC
Qgd 22 nC
RthJC 0.62 K/W
RthCK (TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 3 A
ISM Repetitive; pulse width limited by TJM 12 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 300 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.4 µC
IRM 1.2 A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 (IXFP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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© 2004 IXYS All rights reserved DS99036B(07/04)
IXFA 3N120
IXFP 3N120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
1
2
3
4
5
6
7
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
0.5
1
1. 5
2
2.5
3
0 5 10 15 2 0 2 5
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
0.5
1
1. 5
2
2.5
3
024681012
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction T emperature
0.4
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 3A
I
D
= 1 .5A
V
G S
= 1 0V
Fig. 6. Drain Current vs. Case
Temperature
0
0.5
1
1. 5
2
2.5
3
3.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
0123 4567
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 1 25
º
C
T
J
= 25
º
C
V
G S
= 1 0V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 3N120
IXFP 3N120
Fig. 11. Capacitance
10
10 0
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - p
F
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0 8 16 24 32 40 48
Q
G
- nanoCoulombs
V
G S
- Volts
V
D S
= 600V
I
D
= 1 .5A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
1
2
3
4
5
6
3.5 4 4.5 5 5.5 6 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 1 20
º
C
25
º
C
-40
º
C
Fig. 12. Maximum Transient T hermal
Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1101001000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
01.5 34.567.59
I
D
- Amperes
g f s
- Siemens
T
J
= -40
º
C
25
º
C
1 25
º
C
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
1
2
3
4
5
6
7
8
9
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 1 25
º
C
T
J
= 25
º
C
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