© 2011 IXYS CORPORATION, All Rights Reserved DS98705B(04/11)
VDSS = 1000V
ID25 = 4A
RDS(on) ≤≤
≤≤
≤ 3.0ΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C4A
IDM TC= 25°C, Pulse Width Limited by TJM 16 A
IATC= 25°C4A
EAS TC= 25°C 700 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PD TC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MCMounting Force (TO-263) 10..65/2.2..14.6 Nm/lb.in.
MdMounting Torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
IXFA4N100Q
IXFP4N100Q
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXFA)
GDS
TO-220AB (IXFP)
D (Tab)
G
S
D (Tab)
HiperFETTM
Power MOSFETs
Q-Class
Features
zInternational Standard Packages
zAvalanche Rated
zFast Intrinsic Diode
zLow QG
zLow RDS(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1.5mA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 3.0 Ω
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100Q
IXFP4N100Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 1.5 2.5 S
Ciss 1050 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 120 pF
Crss 30 pF
td(on) 17 ns
tr 15 ns
td(off) 32 ns
tf 18 ns
Qg(on) 39 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9 nC
Qgd 23 nC
RthJC 0.80 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 0.52 μC
IRM 1.80 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = IS, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
© 2011 IXYS CORPORATION, All Rights Reserved
IXFA4N100Q
IXFP4N100Q
VDS - Volts
0246810
ID - Amperes
0
1
2
3
4
VDS - Volts
0 5 10 15 20
ID - Amperes
0
1
2
3
4
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VGS - Volts
345678
ID - Amperes
0
1
2
3
4
ID - Amperes
0123456
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VCE - Volts
0 4 8 12 16 20
ID - Amperes
0
1
2
3
4
5
6
7V
6V
VGS = 10V
VGS = 10V
9V
8V
TJ = 25°C VGS = 10V
9V
8V
TJ = 25°C
TJ = 125°C
5V 5V
TJ = 25°C
TJ = 125°C
6V
7V
5V
6V
7V
VGS = 10V
9V
8V
TJ = 125OC
VGS = 10V
ID = 2A
TJ = 25OC
Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC
Figure 3. Output characteristics at 125°C
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
Figure 4. Admittance Curves
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100Q
IXFP4N100Q
IXYS REF: IXT_4N100Q (4U)04-01-11-A
TC - Degrees Centigrade
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
1
2
3
4
5
Pulse Width - Seconds
10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.01
0.10
1.00
VDS - Volts
0 5 10 15 20 25 30 35
Capacitance - pF
10
100
1000
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2
ID - Amp eres
0
2
4
6
8
10
Gate Charge - nC
0 102030405060
V
GS - Volts
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 600 V
ID = 3 A
IG = 10 mA f = 1MHz
TJ = 125OC
TJ = 25OC
60
2000
Figure 7. Gate Charge Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 11. Transient Thermal Resistance
