IRFR91209A - FAIRCHILD SEMICONDUCTOR

Document Number: 91201 www.vishay.com

S11-0447-Rev. C, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Power MOSFET

IRFP064, SiHFP064

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Ultra Low On- Resistance

• Very Low Thermal Resistance

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247AC package is preferred for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole. It also provides

greater creepage distances between pins to meet the

requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12).

c. ISD ≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

d. 1.6 mm from case.

e. Current limited by the package (die current = 130 A).

PRODUCT SUMMARY

VDS (V) 60

RDS(on) (Ω)V

GS = 10 V 0.009

Qg (Max.) (nC) 190

Qgs (nC) 55

Qgd (nC) 90

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free IRFP064PbF

SiHFP064-E3

SnPb IRFP064

SiHFP064

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 60 V

Gate-Source Voltage VGS ± 20

Continuous Drain CurrenteVGS at 10 V TC = 25 °C ID

TC = 100 °C 70

Pulsed Drain CurrentaIDM 520

Linear Derating Factor 2.0 W/°C

Single Pulse Avalanche EnergybEAS 1000 mJ

Repetitive Avalanche CurrentaIAR 70 A

Repetitive Avalanche EnergyaEAR 30 mJ

Maximum Power Dissipation TC = 25 °C PD300 W

Peak Diode Recovery dV/dtcdV/dt 4.5 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

Soldering Recommendations (Peak Temperature)dfor 10 s 300

Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91201

2S11-0447-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c. Current limited by the package (die current = 130 A).

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA -40

°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 -

Maximum Junction-to-Case (Drain) RthJC -0.50

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.048 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 60 V, VGS = 0 V - - 25 μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250

Drain-Source On-State Resistance RDS(on) V

GS = 10 V ID = 78 Ab--

0.009 Ω

Forward Transconductance gfs VDS = 25 V, ID = 78 Ab38 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

- 7400 -

pFOutput Capacitance Coss - 3200 -

Reverse Transfer Capacitance Crss - 540 -

Total Gate Charge Qg

VGS = 10 V ID = 130 A, VDS = 48 V,

see fig. 6 and 13b

- - 190

nC Gate-Source Charge Qgs --55

Gate-Drain Charge Qgd --90

Turn-On Delay Time td(on)

VDD = 30 V, ID = 130 A,

Rg = 4.3 Ω, RD = 0.22 Ω, see fig. 10b

-21-

Rise Time tr - 190 -

Turn-Off Delay Time td(off) - 110 -

Fall Time tf - 190 -

Internal Drain Inductance LD Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0-

Internal Source Inductance LS-13-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--70

Pulsed Diode Forward CurrentaISM - - 520

Body Diode Voltage VSD TJ = 25 °C, IS = 130 A, VGS = 0 Vb--3.0

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 130 A, dI/dt = 100 A/μsb- 160 250 ns

Body Diode Reverse Recovery Charge Qrr -0.91.7

μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91201 www.vishay.com

S11-0447-Rev. C, 14-Mar-11 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com Document Number: 91201

4S11-0447-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Document Number: 91201 www.vishay.com

S11-0447-Rev. C, 14-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

D.U.T.

10 V

VDS

90 %

10 %

VGS

td(on) trtd(off) tf

www.vishay.com Document Number: 91201

6S11-0447-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

IAS

0.01 Ω

D.U.T.

VDS

-VDD

10 V

Vary tp to obtain

required IAS

QGS QGD

Charge

10 V

D.U.T.

3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

Document Number: 91201 www.vishay.com

S11-0447-Rev. C, 14-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFP064, SiHFP064

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91201.

P.W. Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 Va

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. VGS = 5 V for logic level devices

VDD

Package Information

www.vishay.com Vishay Siliconix

Revision: 01-Jul-13 1Document Number: 91360

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-247AC (High Voltage)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051

A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625

A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010

b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640

b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169

b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC

b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216

D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13

DWG: 5971

0.10 AC

M M

E/2

(2)

(4)

R/2

2 x R

See view B

2 x e

3 x b

2 x b2

123

Ø k BD

M M

ØP (Datum B)

ØP1

0.01 BD

M M

View A - A

Thermal pad

DDE E

View B

(b1, b3, b5) Base metal

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

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Revision: 08-Feb-17 1Document Number: 91000

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