1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 25.1 dB at 2150 MHz
Output power at 1 dB gain compression = 5 dBm at 2150 MHz
Supply current = 20.0 mA at a supply voltage of 3.3 V
Reverse isolation > 35 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.9 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2817
MMIC wideband amplifier
Rev. 2 — 19 April 2012 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 2 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Tabl e 2. Ordering information
Type number Package
Name Description Version
BGA2817 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2817 LS* * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage RF input AC coupled 0.5 4.5 V
ICC supply current - 55 mA
Ptot total power dissipation Tsp = 90 C-200mW
Tstg storage temperature 40 +125 C
Tjjunction temperature - 125 C
Pdrive drive power - 16.5 dBm
Table 5. Thermal characteris tics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to
solder point Ptot = 200 mW; Tsp =90C 300 K/W
Table 6. Characteristics
VCC = 3.3 V; ZS = ZL = 50
; Pi =
40 dBm; Tamb = 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage 3.0 3.3 3.6 V
ICC supply current 17.6 20.0 22.2 mA
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 3 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
Gppower gain f = 250 MHz 23.9 24.5 25.1 dB
f = 950 MHz 23.9 24.7 25.4 dB
f = 2150 MHz 23.7 25.1 26.6 dB
RLin input return loss f = 250 MHz 13 15 17 dB
f = 950 MHz 141618dB
f = 2150 MHz 12 19 26 dB
RLout output return loss f = 250 MHz 13 18 22 dB
f = 950 MHz 171819dB
f = 2150 MHz 12 15 18 dB
ISL isolation f = 250 MHz 48 69 89 dB
f = 950 MHz 474950dB
f = 2150 MHz 33 35 37 dB
NF noise figure f = 250 MHz 3.4 3.9 4.4 dB
f = 950 MHz 3.5 3.9 4.3 dB
f = 2150 MHz 3.4 3.8 4.2 dB
B3dB 3 dB bandwidth 3 dB below gain at 1 GHz 3.2 3.4 3.6 GHz
K Rollett stability factor f = 250 MHz 51 78 106
f = 950 MHz 6 8 9
f = 2150 MHz 1 2 2
PL(sat) saturated output power f = 250 MHz 8 8 9 dBm
f = 950 MHz 5 7 8 dBm
f = 2150 MHz 5 6 7 dBm
PL(1dB) output power at 1 dB gain compression f = 250 MHz 6 6 7 dBm
f = 950 MHz 5 6 7 dBm
f = 2150 MHz 4 5 7 dBm
IP3Iinput third-order intercept point Pdrive =40 dBm (for each tone)
f1= 250 MHz; f2= 251 MHz 975dBm
f1= 950 MHz; f2= 951 MHz 975dBm
f1=2150MHz; f
2=2151MHz 13 10 7dBm
IP3Ooutput third-order intercept point Pdrive =40 dBm (for ea ch tone)
f1= 250 MHz; f2=251MHz 161820dBm
f1= 950 MHz; f2=951MHz 161820dBm
f1=2150MHz; f
2= 2151 MHz 12 15 18 dBm
PL(2H) second harmonic output power Pdrive =28 dBm
f1H = 250 MHz; f2H =500MHz 55 53 51 dBm
f1H = 950 MHz; f2H =1900MHz 47 45 44 dBm
IM2 second-order intermodulation distance Pdrive =31 dBm (for each tone)
f1= 250 MHz; f2=251MHz 343639dBc
f1= 950 MHz; f2=951MHz 383941dBc
Table 6. Characteristics …continued
VCC = 3.3 V; ZS = ZL = 50
; Pi =
40 dBm; Tamb = 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 4 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2817 MMIC. The device is
internally matched to 50 , and therefore does not need any externa l matching. The value
of the input and outpu t DC blocking cap acitors C2 and C3 should not be m ore than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
8.1 Application examples
8.2 Tables
Fig 1. Typical application circ uit
001aaf761
RF_OUTRF_IN
GND2
VS
VS
GND1
RF outputRF input C3C2
C1
The MMIC is very suitable as IF amplifier in e.g. LNB’s.
The excellent wideband characteristics make it an easy
building block.
As second amplifier after an LNA, the MMIC offers an
easy matching, low noise solution.
Fig 2. Application as IF amplifier Fig 3. Application as RF amplifier
001aaf762
from RF
circuit
oscillator
wideband
amplifier to IF circuit
or demodulator
mixer
001aaf763
antenna
oscillator
wideband
amplifier
LNA to IF circuit
or demodulator
mixer
Table 7. Supply current over temp erature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
ICC supply current VCC = 3.0 V 18.0 17.6 17.3 mA
VCC = 3.3 V 20.4 20.0 19.6 mA
VCC = 3.6 V 22.7 22.2 21.7 mA
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 5 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
Table 8. Second harmonic outp ut p ower over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
PL(2H) second harmonic output power f = 250 MHz; Pdrive =28 dBm
VCC =3.0V 38 44 52 dBm
VCC =3.3V 45 53 60 dBm
VCC =3.6V 56 59 53 dBm
f = 950 MHz; Pdrive =28 dBm
VCC =3.0V 43 53 45 dBm
VCC =3.3V 51 45 41 dBm
VCC =3.6V 44 41 39 dBm
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
Pi(1dB) input power at 1 dB gain compression f = 250 MHz
VCC =3.0V 19 18 18 dBm
VCC =3.3V 17 17 17 dBm
VCC =3.6V 16 16 16 dBm
f = 950 MHz
VCC =3.0V 19 18 18 dBm
VCC =3.3V 18 17 17 dBm
VCC =3.6V 17 17 17 dBm
f = 2150 MHz
VCC =3.0V 20 20 20 dBm
VCC =3.3V 19 19 20 dBm
VCC =3.6V 18 19 20 dBm
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 6 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
Table 10. Output power at 1 dB gain compress ion over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
PL(1dB) output power at 1 dB gain compression f = 250 MHz
VCC =3.0V 4 5 5 dBm
VCC =3.3V 6 6 6 dBm
VCC =3.6V 8 8 7 dBm
f = 950 MHz
VCC =3.0V 4 4 4 dBm
VCC =3.3V 6 6 6 dBm
VCC =3.6V 7 7 7 dBm
f = 2150 MHz
VCC =3.0V 4 4 3 dBm
VCC =3.3V 6 5 4 dBm
VCC =3.6V 7 6 5 dBm
Table 11. S aturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
PL(sat) saturated output power f = 250 MHz
VCC =3.0V 667dBm
VCC =3.3V 888dBm
VCC =3.6V 999dBm
f = 950 MHz
VCC =3.0V 666dBm
VCC =3.3V 777dBm
VCC =3.6V 788dBm
f = 2150 MHz
VCC =3.0V 554dBm
VCC =3.3V 765dBm
VCC =3.6V 876dBm
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 7 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
IM2 second-order intermodulation distance f1= 250 MHz;
f2= 251 MHz;
Pdrive =31 dBm
VCC =3.0V 28 3236dBc
VCC =3.3V 33 3640dBc
VCC =3.6V 38 4044dBc
f1= 950 MHz;
f2= 951 MHz;
Pdrive =31 dBm
VCC =3.0V 29 3440dBc
VCC =3.3V 35 3943dBc
VCC =3.6V 40 4442dBc
Table 13. Output third-orde r intercept point over temperatu re and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
IP3Ooutput third-order intercept point f1=250MHz;
f2=251MHz;
Pdrive =40 dBm
VCC =3.0V 14 15 16 dBm
VCC =3.3V 18 18 17 dBm
VCC =3.6V 19 19 19 dBm
f1=950MHz;
f2=951MHz;
Pdrive =40 dBm
VCC =3.0V 15 16 15 dBm
VCC =3.3V 18 18 17 dBm
VCC =3.6V 20 20 18 dBm
f1=2150MHz;
f2=2151MHz;
Pdrive =40 dBm
VCC =3.0V 15 14 12 dBm
VCC =3.3V 17 15 13 dBm
VCC =3.6V 18 16 13 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 25 85
B3dB 3 dB bandwidth VCC = 3.0 V 3.50 3.39 3.24 GHz
VCC = 3.3 V 3.49 3.37 3.22 GHz
VCC = 3.6 V 3.48 3.36 3.21 GHz
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 8 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
9. Test information
True size = 30 mm 30 mm.
Fig 4. PCB layout and demo board with components
001aal226
C2
C1
C3
IC1
30 mm
30
mm
Table 15. List of components used for the typical application
Component Description Value Dimensions
C1, C2 multilayer ceramic chip capacitor 100 pF 0603
C3 multilayer ceramic chip capacitor 22 nF 0603
IC1 BGA2817 MMIC SOT363
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 9 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
10. Package outline
Fig 5. Package outline SOT363
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
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Product data sheet Rev. 2 — 19 April 2012 10 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
11. Abbreviations
12. Revision history
Table 16. Abbreviations
Acronym Description
DC Direct Current
IF Intermediate Frequency
LNA Low-Noise Amplifier
LNB Low-Noise Block converter
PCB Printed-Circuit Board
RF Radio Frequency
SMD Surface Mounted Device
Table 17. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGA2817 v.2 20120419 Product data sheet - BGA2817 v.1
Modifications Table 5 on page 2: The maximum value for VCC has been changed to 4.5 V
BGA2817 v.1 20111117 Product data sheet - -
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Product data sheet Rev. 2 — 19 April 2012 11 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
13. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product st atus of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
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Short data sheet — A short data sheet is an extract from a full data sheet
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for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
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Product [short] dat a sheet Production This document contains the product specification.
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 19 April 2012 12 of 13
NXP Semiconductors BGA2817
MMIC wideband amplifier
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14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BGA2817
MMIC wideband amplifier
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 April 2012
Document identifier: BGA2817
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Application examples . . . . . . . . . . . . . . . . . . . . 4
8.2 Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13