BC856U Semiconductor PNP Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=-55V * Complementary pair with BC846U Ordering Information Type NO. Marking BC856U CV Package Code SOT-323 : hFE rank Outline Dimensions unit : mm 2.10.1 1.250.05 KST-3019-000 0.150.05 2 0.300.1 3 0~0.1 1.300.1 0.900.1 2.00.2 1 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector 1 BC856U (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -80 V Collector-Emitter voltage VCEO -55 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Base-Emitter saturation voltage Collector-Emitter saturation voltage - - V VCE=-5V, IC=-2mA - - -700 mV VBE(sat) IC=-100mA, IB=-5mA - -900 - mV VCE(sat) IC=-100mA, IB=-5mA - - -650 mV - - -15 nA 110 - 800 - VCB=-5V, IC=-10mA - 150 - MHz Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF NF VCE=-5V, IC=-200A, f=1KHz,Rg=2K - - 10 dB ICBO VCB=-35V, IE=0 DC current gain hFE* VCE=-5V, IC=-2mA Collector output capacitance Noise figure Unit -55 Collector cut-off current Transition frequency Min. Typ. Max. fT * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-3019-000 2 BC856U Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC-VCE Fig. 2 IC-VBE Fig. 4 hFE-IC Fig. 5 VCE(sat) -IC KST-3019-000 3