KST-3019-000 1
BC856U
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=-55V
• Complementary pair with BC846U
Ordering Information
Type NO. Marking Package Code
BC856U CV SOT-323
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne cti ons
1. Bas e
2. Emitter
3. Collector
2.1±0.1
1.25±0.05
1
2.0±0.2
0.30±0.1
2
0.1 Min.
1.30±0.1
0.90±0.1
0.15±0.05
3
0~0.1
KST-3019-000 2
BC856U
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -80 V
Collector-Emitter voltage VCEO -55 V
Emitter-Base voltage VEBO -5 V
Collector current IC-100 mA
Collector dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -55 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=-5V, IC=-2mA - - -700 mV
Base-Emitter sa turation voltage VBE(sat) IC=-100mA, IB=-5mA - -900 - mV
Collec tor -Emitter s a turation voltage VCE(sat) IC=-100mA, IB=-5mA - - -650 mV
Collector cut-off current ICBO VCB=-35V, IE=0 - - -15 nA
DC current gain hFE*VCE=-5V, IC=-2mA 110 - 800 -
Transition frequency fTVCB=-5V, IC=-10mA - 150 - MHz
Collec tor output capac itance Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF
Noise figure NF VCE=-5V, IC=-200µA,
f=1KHz,Rg=2KΩ--10dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3019-000 3
BC856U
Electrical Characteristic Curves
Fig. 3 IC-VCE Fig. 4 hFE-IC
Fig. 5 VCE(sat) -IC
Fig. 2 IC-VBE
Fig. 1 PC-Ta
