SIEMENS TEMPFET @ N channel! @ Enhancement mode @ Temperature sensor with thyristor characteristic @ The drain pin is electrically shorted to the tab BTS 110 Pin 1 Refer to circuit design hints (see chapter Technical Information) Type Vos Tp Rosiony | Package Ordering Code BTS 110 100V | 10A (0.22 | TO-220AB Maximum Ratings C67078-A5008-A2 Parameter Symbol Values Unit Drain-source voltage Vos 100 Vv Drain-gate voltage, Rgs = 20 kQ Vocr 1100 j Gate-source voltage Vos +20 Continuous drain current, T, = 25 C ly 10 A ISO drain current loIso 1.75 Te = 85C, Veg = 10 V, Vpg = 0.5 V Pulsed drain current, Tp = 25C 15 puls 40 Short circuit current, T)=-55...+150C | Igc 37 Short circuit dissipation, 7,=55...+ 150C | Psomax 500 Ww Power dissipation Pro 40 Operating and storage temperature range Ti. Tig 55... + 150 cc DIN humidity category, DIN 40 040 - E [> IEC climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance K/W Chip-case Rinse <3.4 Chip-ambient Rinsa <75 Semiconductor Group 6 - 23SIEMENS BTS 110 Electrical Characteristics at T, = 25 'C, unless otherwise specified. Parameter Symbol Values Unit Static Characteristics Drain-source breakdown voltage Visayoss Vv Veg =0./p=1MA 100 - - Gate threshold voltage - Vesany Veg = Vos. fp = 1 MA 2.5 3.0 3.5 Zero gate voltage drain current loss HA Veg = OV, Vog = 100 V T,=25C - 1 10 T,=125C - 100 300 Gate-source leakage current less Ves = 20 V, Vpg = 0 T,= 25C _ 10 100 nA T, = 150C - 2.0 4.0 pA Drain-source on-state resistance Rosion) Q Veg =10V,/p=5A - 0.17 0.2 Dynamic Characteristics Forward transconductance S$ Vos 2 2 x Ly x Rosienman fo = 5 A 8.0 Input capacitance pF Ves = 0, Vos = 25 V, f= 1 MHz 600 Output capacitance Veg = 0, Vos = 25 V, f= 1 MHz 240 Reverse transfer capacitance Ves = 0, Vos = 25 V, f= 1 MHz 130 Turn-on tiM fon (fon = fajon) + f) 30 ns Yoo = 380 V, Veg = 10 V, 1p = 2.9A, 70 Reg = 50 2 Turn-off time foi, (fou = lato + 4) batom 90 Voc = 30 V, Veg = 10 V, 1p = 2.9A, i 70 Res = 502 Semiconductor Group 6 - 24SIEMENS BTS 110 Electrical Characteristics (cont'd) at 7, = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current i - - 10 A Pulsed source current tenn - 40 Diode forward on-voltage Vsp | Vv ik =20A, Veg = 0 a 1.3 1.6 Reverse recovery time tre ns k= Ie, di-fdt = 100 A/us, Vp = 30 V - 170 - Reverse recovery charge On uC ke = Is, di-/dt = 100 A/us, V_ = 30 V ~ 0.30 - Temperature Sensor eee es Fowardvotage Van | || Frsjon) = 10 MA, 7, = 55... + 150C - 1.4 1.5 Sensor override, , < 100 us, f< 1 kHz T,=55...+ 160C - - 10 Forward current Liston) mA ;=-55..+ 150 C - - 10 Sensor override, /, < 100 us T,=-55...+160 C - - 600 Holding current, Visox=5V, 7, = 25C ty 0.05 T, = 150 C 0.05 Switching temperature Tron) Vig =5V 150 Turn-off time lott Vrs = 5 V, Frsyom = 2 mA | 0.5 Semiconductor Group 6-25SIEMENS BTS 110 Examples for short-circuit protection at T; = 55 ... + 150 'C, unless otherwise specified. Danone a a er 7 Parameter ' Symbol Examples Unit oo Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time T, = 25 C, before short circuit Short-circuit protection /5. = f (Vos) Max. gate voltage Vosisc) =f (Vos) Parameter: Ves Parameter: T,=55...+ 150C Diagram to determine /g, for7;=55...+ 150 C 4 BTS 110 SITOO416 45 8.5 Transient iT f A vi 7 ; 35 Vesse) | 7.0 30 25 Pal crt a Pscemax 5.04 15 . , H | 10 . | eeedeeredenecpDd | 0 0 10 20 30 40 50 60 70 80 V 100 10 14 18 - Vos Semiconductor Group 6 - 26SIEMENS BTS 110 Max. power dissipation P,,, = f (Tc) BTS 110 siTooa19 45 cp Tt T Prot 50 \ | 25 \ t= 20 \ 15; N tot | \ | | T\ sy Pp Pp \ ot Littl! \ 0 20 40 60 80 100 120 Cc 160 + 7, Typical output characteristics /5 =f (Vps) Parameter: f, = 80 us BTS 110 (4 =80 us) 31700420 24 Ao 40W A Vyg= 20 : 10 Ip 20 1 ig 16 14 12 10 oO NM FF OD 0 1 2 3 4 5 6 V7 = Vos Semiconductor Group Typ. drain-source on-state resistance Rosion) =f (fp) Parameter: Ves BIS 110 ; ; SIT00423 iWes= 5V 5.5V6V6.5V7V 7.5V8V| | 9V 0.6 Poston) 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 18 20 A 24 Ip Safe operating area /, = f (Vps) Parameter: D = 0.01, T. = 25 C 19228 110 (D=0.01, I =25-C) $!100421 A 5 \o He & ES 10 Ns 5 10 5 197th 10 5 10! 5 10? 5v105 VosSIEMENS Drain-source on-state resistance Rogion) = f(T} Parameter: /p =-5 A, Veg =10V BIS 110 (p=5A, Veg =10V) 45 0 Rosten) 30 20 Q -80-60-40-20 0 20 40 60 80100120 C160 Typ. transfer characteristic Ip =f (Ves) Parameter: 1, = 80 us, Vpg = 25 V BTS 110 (#,=80 us, Vps= 25) $1T00422 25 BTS 110 Gate threshold voltage Vesin =f (7}) Parameter: Vos = Ves, fp = 1 MA (spread) (Mos = Ves. fn =1mA) siT0426 BTS 110 3 Voscth) 4 0 -60-40-20 0 20 40 60 80 100120 C 160 Fi Typ. transconductance g,, = f (/p) Parameter: f, = 80 us, Vog = 25 V s!T00429 1 tes 9 (Vog=0, =1MHz) nF A 5 ly 20 Cc | - 15 5 10 107! 5 5 0 10-? 0 10 20 30 V 40 Vg Semiconductor Group 6 - 28SIEMENS Continous drain current /> =f (7c) Parameter: Veg > 10 V BTS 110 (Ves 2 10) $1100427 1 Tr N\ | 11 A SL 8 oan 0 20 40 60 80 100 120 Cc 160 ea Typ. gate-source leakage current loss =f (Te) Parameter: Ves = 20 V, Vos = 0 104 2 110 (Vog=20V, Vpg =0) siToo428 nA 5 Togs 103 5 102 LL 80 100 120 ~C 160 - fT, 10! 0 20 40 60 Semiconductor Group BTS 110 Forward characteristics of reverse diode le =f (Vsp) Parameter: T;, f) = 80 us (spread) 102 BIS 110 (= 80us) S!T00430 A Re 5 25C Ie 150C C (98%) 10! C (98%) 10 Typ. capacitances C = f (Vps) Parameter: Veg = 0, f= 1 MHz 491 BIS 110 ( , f=1MHz) S$IT00429 nF 5 Cc 10 5 107! 5 107? 0 10 20 30 Vv 40 ~ VosSIEMENS Transient thermal impedance Z,,). = f (/,) Parameter: D = ,/T 1181S L0 (0=4,/T) 51700431 K W Zinc 10 5 D= 107" 0.5 0.2 0.4 0.0 hm 0.0 d O 0.0 0 +l pile f 107? 10-5 107 10-5 1072 1071 10 s 10! Pp Semiconductor Group BTS 110SIEMENS TO 220 AB Ordering Code Standard C67078-A5008-A2 | cal OF i | 17.5 =) 128 7 15.6 9.2 | i + 4.6 4 13.5 0.75 shiny i Gs 14 Ll 1.0s 254 ei bom 254 GPTO5153 TO 220 AB SMD version E3045 Ordering Code C67078-A5008-A4 GPOUS1E4 Semiconductor Group 6 - TO 220 AB Option E 3046 31 3 BTS 110 Package Outlines Ordering Code C67078-A5008-A3 } oy 3 ' 0.5 shear and punch direction no burrs this surface dip tinning