S1226-8BQ - Hamamatsu Photonics K.K.

Si photodiodes

S1226 series

For UV to visible, precision photometry;

suppressed near IR sensitivity

www.hamamatsu.com 1

Analytical equipment

High UV sensitivity: QE=75 % (λ=200 nm)

Optical measurement equipment, etc.

Suppressed nearIR sensitivity

Low dark current

High reliability

Structure / Absolute maximum ratings

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Features Applications

Type no.

Dimensional

outline/

Window

material*

Package

Photosensitive

area size

Effective

photosensitive

area

Absolute maximum ratings

Reverse

voltage

VR max

Operating

temperature

Topr

Storage

temperature

Tstg

(mm) (mm2) (V) (°C) (°C)

S1226-18BQ (1)/Q TO-18 1.1 × 1.1 1.2

-20 to +60 -55 to +80

S1226-18BK (2)/K -40 to +100 -55 to +125

S1226-5BQ (3)/Q

TO-5

2.4 × 2.4 5.7 -20 to +60 -55 to +80

S1226-5BK (4)/K -40 to +100 -55 to +125

S1226-44BQ (5)/Q 3.6 × 3.6 13 -20 to +60 -55 to +80

S1226-44BK (6)/K -40 to +100 -55 to +125

S1226-8BQ (7)/Q TO-8 5.8 × 5.8 33 -20 to +60 -55 to +80

S1226-8BK (8)/K -40 to +100 -55 to +125

Note:

Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product

within the absolute maximum ratings.

* Window material, K=borosilicate glass, Q=quartz glass

Type no.

Spectral

response

range

Peak

sensitivity

wavelength

λp

Photosensitivity

(A/W)

Short

circuit

current

Isc

100 lx

Dark

current

VR=10 mV

max.

Temp.

coefﬁ cient

of ID

TCID

Rise time

VR=0 V

RL=1 kΩ

Terminal

capacitance

VR=0 V

f=10 kHz

Shunt

resistance

Rsh

VR=10 mV

Noise

equivalent

power

NEP

λp

200 nm

He-Ne

laser

633

(nm) (nm) (pA)

(times/°C)

(μs) (pF)

Min.

(GΩ)

Typ.

(GΩ)(W/Hz1/2)

Min. Typ. Min.

(μA)

Typ.

(μA)

S1226-18BQ

190 to 1000

720 0.36

0.10 0.12

0.34

0.5 0.66 2

1.12

0.15 35 5 50 1.6 × 10-15

S1226-18BK

320 to 1000

S1226-5BQ

190 to 1000

0.10 0.12 2.2 2.9 5 0.5 160 2 20 2.5 × 10-15

S1226-5BK

320 to 1000

S1226-44BQ

190 to 1000

0.10 0.12 4.4 5.9 10 1 380 1 10 3.6 × 10-15

S1226-44BK

320 to 1000

S1226-8BQ

190 to 1000

0.10 0.12 12 16 20 2 1200 0.5 5 5.0 × 10-15

S1226-8BK

320 to 1000

Si photodiodes S1226 series

Spectral response Photosensitivity temperature characteristic

Photosensitivity (A/W)

Wavelength (nm)

0.1

190 400 600 800 1000

0.3

0.2

(Typ. Ta =25 °C)

0.4

0.5

0.6

0.7

S1226-BQ

S1226-BK

Temperature coefficient (%/°C)

Wavelength (nm)

(Typ. )

190 400 600 800 1000

+1.0

+0.5

+1.5

-0.5

KSPDB0106EA KSPDB0030EA

Dark current vs. reverse voltage

Dark current

Reverse voltage (V)

(Typ. Ta=25 °C)

0.01

100 fA

0.1 1 10

1 pA

10 pA

100 pA

1 nA

S1226-44BQ/BK

S1226-8BQ/BK

S1226-5BQ/BK

S1226-18BQ/BK

KSPDB0108EC

Si photodiodes S1226 series

Window

3.0 ± 0.1

4.7 ± 0.1

5.4 ± 0.2

2.54 ± 0.2

14 3.6 ± 0.2

2.4

Connected to case

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

ȁ0.45

Lead

Photosensitive area

1.1 × 1.1

Photosensitive surface

Glass

Connected to case The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

0.45

Lead

Photosensitive surface

Glass

Window

5.9 ± 0.1

Photosensitive area

2.4 × 2.4

20 4.1 ± 0.2

2.9

5.08 ± 0.2

8.1 ± 0.1

9.1 ± 0.2

Connected to case

Photosensitive surface

Glass

4.7 ± 0.1

5.4 ± 0.2

2.54 ± 0.2

14 3.6 ± 0.2

2.4

Window

3.0 ± 0.1

Photosensitive area

1.1 × 1.1

ȁ0.45

Lead

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

0.45

Lead

20 4.1 ± 0.2

2.9

5.08 ± 0.2

8.1 ± 0.1

9.1 ± 0.2

Connected to case

Photosensitive surface

Glass

Photosensitive area

2.4 × 2.4

Window

5.9 ± 0.1

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

Dimensional outlines (unit: mm)

KSPDA0113EE

KSPDA0114ED

KSPDA0201EB

KSPDA0202EB

(2) S1226-18BK

(4) S1226-5BK

(1) S1226-18BQ

(3) S1226-5BQ

Si photodiodes S1226 series

0.45

Lead

Photosensitive surface

Glass

Connected to case The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Window

5.9 ± 0.1

Photosensitive area

3.6 × 3.6

Distance from photosensitive

area center to cap center

-0.6≤X≤0

-0.3≤Y≤+0.3

20 4.1 ± 0.2

2.9

5.08 ± 0.2

8.1 ± 0.1

9.1 ± 0.2

0.3

0.45

Lead

Distance from photosensitive

area center to cap center

-0.6≤X≤0

-0.3≤Y≤+0.3

20 4.1 ± 0.2

2.9

5.08 ± 0.2

8.1 ± 0.1

9.1 ± 0.2

0.3

Photosensitive area

3.6 × 3.6

Window

5.9 ± 0.1

Photosensitive surface

Glass

Connected to case

KSPDA0195EC

KSPDA0203EB

(6) S1226-44BK(5) S1226-44BQ

Cat. No. KSPD1034E07 Feb. 2013 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of February, 2013.

Si photodiodes S1226 series

ġġġġ0.45

Lead

Photosensitive surface Glass

Photosensitive area

5.8 × 5.8

Window

10.5 ± 0.1

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Index mark ( 1.4)

Connected to case

12.35 ± 0.1

13.9 ± 0.2

15 5.0 ± 0.2

1.9

7.5 ± 0.2

0.085

Distance from photosensitive

area center to cap center

-0.315≤X≤0.485

-0.4≤Y≤+0.4

ȁ0.45

Lead

Photosensitive area

5.8 × 5.8

Window

10.5 ± 0.1

Index mark ( 1.4)

Connected to case

Photosensitive surface Glass

12.35 ± 0.1

13.9 ± 0.2

15 5.0 ± 0.2

1.9

7.5 ± 0.2

0.085

Distance from photosensitive

area center to cap center

-0.315≤X≤+0.485

-0.4≤Y≤+0.4

KSPDA0115ED

KSPDA0204EB

(8) S1226-8BK(7) S1226-8BQ