SAMSUNG SEMICONDUCTOR INC .14e 0 ff 764242 oOO72es.4 BCX71H.... ..- PNP EPITAXIAL SILICON TRANSISTOR ; T=A-| GENERAL PURPOSE TRANSISTOR ors 4 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Base Voltage | Vepo 45 v Collector-Emitter Voltage Veo 45 Vv Emitter-Base Voltage . Vewo 5 Vv Collector Current tc 100 mA + Collector Dissipation Po 350 mw Storage Temperature Tstg 1650 C * Refer to MMBT5086 for graphs 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Max Unit Collector-Emitter Breakdown Voltage | BVceo Ic=2mA, Ip=O0 45 V Emitter-Base Breakdown Voltage BVeso le= pA, Ic=0 5 Vv Collector Cutoff Current lees t Vce=32V, Vae=0 20 nA OC Current Gain. Hee + Vers SV, Io= 1OpA 30 } Vce=5V, lc=2mA 140 310 i - : Vece= 1V, Ie=50mMA 80 Collector-Emitter Saturation Voltage Vce (sat) | lc=10mMA, lg=0.25mA 0.25 Vv lc=50mA, |p=1.25mA 0.55 Vv Base-Emitter Saturation Voltage Vee (sat) | Ie=10mA, le=0.25mA 0.6 0.85 Vv Ic=50mMA, Ie=1.25mMA 0.68 1.05 Vv Base-Emitter On Voltage Vee lon) | le=2mA, Voe=5V - 0.6 0.75 Vv Output Capacitance Cob Vcs=10V, Ie=O 6 pF f=1MHz Noise Figure . NF Is=0.2mA, Voe=5V 6 dB : f=1KHz, Re=2K0 / Turn On Time ton Ie=10mA, Ia:=1mMA 150 ns Turn Off Time tolf ln2=1MA, Ves=3.6V 800 ns R.=9908 . os Marking Fy BH a KS cee SAMSUNG SEMICONDUCTOR . 495