Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB715F
lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm)
Low current rectification
lFeatures
1) Small mold type. (UMD3)
2)
Low VF
3) High reliability.
lStructure
lConstruction
Silicon epitaxial planar
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta= 25°C)
Reverse voltage (repetitive peak)
VRM V
Reverse voltage (DC)
VRV
Average rectified forward current Io mA
IFSM mA
Junction temperature Tj °C
Storage temperature Tstg °C
(*1) Rating of per diode
Symbol Min. Typ. Max. Unit
Forward voltage
VF- - 0.37 V IF=1mA
Reverse current
IR- - 1 mAVR=10V
Capacitance between terminals Ct - 2.0 - pF
VR=1V f=1MHz
Parameter
Conditions
Parameter
-40 to +125
lElectrical characteristics (Ta = 25°C)
Symbol
Limits
Unit
40
40
30
200
125
Forward current surge peak (60Hz・1cyc) (*1)
ROHM : UMD3
JEITA : SC-70
dot (year week factory)
JEDEC :SOT-323
UMD3
2.0±0.2
2.1±0.1
1.25±0.1
0.3±0.1
各リードとも
同寸法
(3)
1.3±0.1
（0.65）
（0.65）
(2)
(1)
0.15±0.05
0.9±0.1
0.7±0.1
0.1Min
0～0.1
Each lead has same dimension
0.9MIN.
0.8MIN.
1.6
0.65
1.3
4.0±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
3.5±0.05
1.75±0.1
8.0±0.2
φ0.5±0.05
2.4±0.1
2.25±0.1
0
5.5±0.2
1.25±0.1
2.4±0.1
0.3±0.1
0～0.1
f0.50.05
f1.550.05
anode
cathode
anode
1/5
2013.04 - Rev.C
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB715F
lElectrical characteristic curves
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.001
0.01
0.1
1
10
100
1000
010 20 30
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.1
1
10
0 5 10 15 20 25 30 35
f = 1MHz
250
260
270
280
290
300
AVE : 267.4mV
Ta=25°C
IF=1mA
n=30pcs
FORWARD CURRENT : IF(mA)
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(mA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF DISPERSION MAP
2/5
2013.04 - Rev.C
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB715F
lElectrical characteristic curves
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ta=25°C
VR=10V
n=30pcs
AVE : 0.083mA
0
5
10
15
20
AVE : 7.30A
0
5
10
15
20
110 100
0
1
2
3
4
5
6
7
8
9
10
AVE : 1.97pF
Ta=25°C
f=1MHz
VR=1V
n=10pcs
REVERSE CURRENT : IR(mA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
IFSM DISPERSION MAP
8.3ms
IFSM
1cyc.
PEAK SURGE
FORWARD CURRENT : IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1cyc.
8.3ms
IFSM
8.3ms
3/5
2013.04 - Rev.C
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB715F
lElectrical characteristic curves
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
D = 1/2
DC
Sin(θ=180)
0
0.001
0.002
0.003
010 20 30
D = 1/2
DC
Sin(θ=180)
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
0
1
2
3
4
5
6
7
8
9
10
110 100
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
FORWARD POWER
DISPERSION : PF(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
IFSM
time
1ms
IM=1mA IF=10mA
300ms
time
Mounted on glass epoxy board
REVERSE POWER
DISPERSION : PR (W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2013.04 - Rev.C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB715F
lElectrical characteristic curves
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0
0.02
0.04
0.06
0.08
0.1
025 50 75 100 125
D = 1/2
DC
Sin(θ=180)
0.00
0.02
0.04
0.06
0.08
0.10
025 50 75 100 125
D = 1/2
DC
Sin(θ=180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
T Tj=125°C
D=t/T
t VR
Io
VR=20V
0A
0V
T Tj=125°C
D=t/T
t VR
Io
VR=20V
0A
0V
5/5
2013.04 - Rev.C
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
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