BLF177 HF/VHF power MOS transistor Rev. 06 -- 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION * High power gain * Low intermodulation distortion * Easy power control andbook, halfpage 4 * Good thermal stability 3 * Withstands full load mismatch. d APPLICATIONS * Designed for industrial and military applications in the HF/VHF frequency range. g MBB072 1 DESCRIPTION s 2 MLA876 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. Fig.1 Simplified outline (SOT121B) and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING PINNING Product and environmental safety - toxic materials PIN DESCRIPTION 1 drain 2 source 3 gate 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB class-AB CW class-B f (MHz) VDS (V) PL (W) Gp (dB) D (%) d3 (dB) d5 (dB) 28 50 150 (PEP) >20 >35 <-30 <-30 108 50 150 typ. 19 typ. 70 - - Rev. 06 - 24 January 2007 2 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 125 V VGS gate-source voltage - 20 V ID drain current (DC) Ptot total power dissipation Tstg Tj - 16 A - 220 W storage temperature -65 +150 C junction temperature - 200 C Tmb 25 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base max. 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W MRA906 102 handbook, halfpage MGP089 300 handbook, halfpage ID (A) Ptot (W) 10 (1) 200 (2) (1) (2) 1 10-1 100 1 10 102 VDS (V) (1) Current in this area may be limited by RDSon. (2) Tmb = 25 C. 103 0 0 50 100 Th (C) 150 (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. Fig.3 Power derating curves. Rev. 06 - 24 January 2007 3 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 125 - - V IDSS drain-source leakage current VGS = 0; VDS = 50 V - - 2.5 mA IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 1 A VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 - 4.5 V VGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V - - 100 mV gfs forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 - S RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V - 0.2 0.3 IDSX on-state drain current VGS = 10 V; VDS = 10 V - 25 - A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 480 - pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 190 - pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 14 - pF VGS group indication LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 B 2.1 2.2 O 3.3 3.4 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D E 2.3 2.4 R 3.6 3.7 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 Rev. 06 - 24 January 2007 4 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP090 0 MGP091 30 handbook, halfpage handbook, halfpage T.C. ID (A) (mV/K) -1 20 -2 -3 10 -4 -5 10-2 0 10-1 1 ID (A) 0 10 5 10 VGS (V) 15 VDS = 10 V; valid for Th = 25 to 70 C. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. MGP092 400 handbook, halfpage Fig.5 Drain current as a function of gate-source voltage; typical values. MBK408 1200 handbook, halfpage RDSon C (pF) (m) 300 800 Cis 200 400 Cos 100 0 0 50 100 Tj (C) 150 0 20 40 VDS (V) 60 ID = 5 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. Fig.7 Rev. 06 - 24 January 2007 Input and output capacitance as functions of drain-source voltage; typical values. 5 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP093 300 handbook, halfpage Crs (pF) 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB test circuit (see Fig.13). Th = 25 C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 ; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) D (%) d3 (dB) (note 1) d5 (dB) (note 1) SSB, class-AB 28 50 0.7 20 to 150 (PEP) >20 typ. 35 >35 typ. 40 <-30 typ. -35 <-30 typ. -38 Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: f = 28 MHz; VDS = 50 V at rated output power. Rev. 06 - 24 January 2007 6 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor MGP096 30 BLF177 MGP094 60 handbook, halfpage handbook, halfpage Gp (dB) D (%) 20 40 10 20 0 0 0 100 PL (W) PEP 200 0 100 200 PL (W) PEP Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.9 Fig.10 Two tone efficiency as a function of load power; typical values. Power gain as a function of load power; typical values. MGP097 -20 MGP098 -20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) -30 -30 -40 -40 -50 -50 -60 -60 0 100 PL (W) PEP 0 200 100 PL (W) PEP 200 Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.11 Third order intermodulation distortion as a function of load power; typical values. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. Rev. 06 - 24 January 2007 7 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 handbook, full pagewidth C9 C1 D.U.T. C3 C12 L6 C10 C11 C2 C4 C14 L2 L1 input 50 L3 R1 R2 output 50 C15 L4 C13 C5 C6 R5 C7 R3 R4 L5 C8 +VG +VD MGP095 Fig.13 Test circuit for class-AB operation. Rev. 06 - 24 January 2007 8 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components class-AB test circuit (see Fig.13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2 multilayer ceramic chip capacitor (note 1) 56 pF C3, C11 multilayer ceramic chip capacitor (note 1) 62 pF C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 C8 electrolytic capacitor 2.2 F, 63 V C9, C10 multilayer ceramic chip capacitor (note 1) 20 pF C12 multilayer ceramic chip capacitor (note 1) 100 pF C15 multilayer ceramic chip capacitor (note 1) 150 pF L1 5 turns enamelled 0.7 mm copper wire 133 nH length 4.5 mm; int. dia. 6 mm; leads 2 x 5 mm L2, L3 stripline (note 2) 41.1 length 13 x 6 mm L4 7 turns enamelled 1.5 mm copper wire 236 nH length 12.5 mm; int. dia. 8 mm; leads 2 x 5 mm L5 grade 3B Ferroxcube wideband HF choke L6 5 turns enamelled 2 mm copper wire 170 nH R1, R2 metal film resistor 10 , 1 W R2 metal film resistor 10 k, 0.4 W R3 metal film resistor 1 M, 0.4 W R5 metal film resistor 10 k, 1 W 4312 020 36642 length 11.5 mm; int. dia. 8 mm; leads 2 x 5 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm (Rogers 5880). Rev. 06 - 24 January 2007 9 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP099 10 MGP100 30 handbook, halfpage handbook, halfpage Zi () Gp (dB) ri 5 20 0 10 xi -5 0 0 10 20 f (MHz) 30 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 . Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 . Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Power gain as a function of frequency; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19). Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 15.8 unless otherwise specified. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) D (%) 108 50 0.1 150 typ. 19 typ. 70 Rev. 06 - 24 January 2007 10 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP101 30 MGP102 100 handbook, halfpage handbook, halfpage Gp (dB) D (%) 20 50 10 0 0 100 200 PL (W) 0 0 100 PL (W) 200 Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz. Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz. Fig.16 Power gain as a function of load power; typical values. Fig.17 Two tone efficiency as a function of load power; typical values. MGP103 200 handbook, halfpage PL (W) 100 0 0 1 2 3 PIN (W) 4 Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz. Fig.18 Load power as a function of input power; typical values. Rev. 06 - 24 January 2007 11 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 C17 handbook, full pagewidth C1 C3 C2 L4 C13 L8 C15 C14 C16 L7 L3 L2 L1 input 50 D.U.T. BLF177 C4 C18 output 50 L5 C5 R1 C9 R2 C11 C6 C10 R6 C12 C7 L6 R3 +VD C8 R5 R4 C19 MGP104 Fig.19 Test circuit for class-B operation at 108 MHz. Rev. 06 - 24 January 2007 12 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components class-B test circuit (see Fig.19) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004 C3 multilayer ceramic chip capacitor (note 1) 20 pF C4, C5 multilayer ceramic chip capacitor (note 1) 62 pF C6, C7, C9, C10 multilayer ceramic chip capacitor (note 1) 1 nF C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 C13, C14 multilayer ceramic chip capacitor (note 1) 36 pF C15 multilayer ceramic chip capacitor (note 1) 12 pF C17 multilayer ceramic chip capacitor (note 1) 5.6 pF C19 electrolytic capacitor 4.4 F, 63 V L1 3 turns enamelled 0.8 mm copper wire 22 nH length 5.5 mm; int. dia. 3 mm; leads 2 x 5 mm L2 stripline (note 2) 64.7 31 x 3 mm L3, L4 stripline (note 2) 41.1 10 x 6 mm L5 6 turns enamelled 1.6 mm copper wire 122 nH length 13.8 mm; int. dia. 6 mm; leads 2 x 5 mm L6 grade 3B Ferroxcube wideband HF choke L7 1 turn enamelled 1.6 mm copper wire 16.5 nH int. dia. 9 mm; leads 2 x 5 mm L8 2 turns enamelled 1.6 mm copper wire 34.4 nH length 3.9 mm; int. dia. 6 mm; leads 2 x 5 mm R1, R2 metal film resistor 31.6 , 1 W 2222 030 28478 4312 020 36642 R3 metal film resistor 1 k, 0.4 W R4 cermet potentiometer 5 k R5 metal film resistor 44.2 k, 0.4 W R6 metal film resistor 10 , 1 W Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm (Rogers 5880). Rev. 06 - 24 January 2007 13 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 174 handbook, full pagewidth strap strap rivet 70 strap R4 R5 C19 L6 R3 C6 C7 R1 C4 C3 R6 C11 C10 C8 C9 +VD C12 L5 R2 C13 C15 L2 L1 C1 C5 L3 L4 L7 C14 L8 C17 C16 C2 C18 MGP105 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets. Fig.20 Component layout for 108 MHz class-B test circuit. Rev. 06 - 24 January 2007 14 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP107 4 MGP108 10 handbook, halfpage handbook, halfpage ZL () Zi () 2 8 ri RL 0 6 xi XL -2 4 -4 2 -6 0 100 0 f (MHz) 200 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 . Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 . Fig.21 Input impedance as a function of frequency (series components); typical values. Fig.22 Load impedance as a function of frequency (series components); typical values. MGP109 30 handbook, halfpage Gp (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 . Fig.23 Definition of transistor impedance. Fig.24 Power gain as a function of frequency; typical values. Rev. 06 - 24 January 2007 15 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 BLF177 scattering parameters VDS = 50 V; ID = 100 mA; note 1. s11 f (MHz) s21 s12 s22 |s11| |s21| |s12| |s22| 5 0.86 -110.20 36.90 114.20 0.02 25.20 0.64 -84.90 10 0.83 -139.40 20.39 93.30 0.02 5.10 0.55 -112.00 20 0.85 -155.70 9.82 72.60 0.02 -13.40 0.60 -129.30 30 0.88 -161.50 5.96 59.30 0.02 -24.70 0.69 -138.00 40 0.90 -164.90 3.98 49.30 0.02 -31.70 0.76 -144.30 50 0.92 -167.10 2.83 41.90 0.01 -35.80 0.82 -149.30 60 0.94 -169.00 2.11 36.00 0.01 -36.80 0.86 -153.50 70 0.96 -170.70 1.63 31.20 0.01 -33.70 0.89 -157.00 80 0.96 -172.20 1.29 27.40 0.00 -23.00 0.91 -159.90 90 0.97 -173.40 1.04 24.20 0.00 3.30 0.92 -162.40 100 0.97 -174.30 0.86 21.70 0.00 42.50 0.94 -164.50 125 0.99 -176.50 0.57 16.40 0.01 81.60 0.95 -168.80 150 0.99 -178.10 0.40 13.40 0.01 88.70 0.97 -171.90 175 0.99 -179.80 0.30 11.60 0.02 90.70 0.98 -174.50 200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 -176.70 250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80 300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90 350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30 400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90 450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60 500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40 600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10 700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90 800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80 900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60 1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20 Note 1. For more extensive s-parameters see internet website: http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast Rev. 06 - 24 January 2007 16 of 19 NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c A b mm 7.27 6.17 5.82 5.56 inches 0.286 0.243 0.229 0.006 0.219 0.004 UNIT OUTLINE VERSION 0.16 0.10 F H p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.25 0.51 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 0.130 0.120 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.01 0.02 D D1 12.86 12.83 12.59 12.57 45 REFERENCES IEC JEDEC EIAJ SOT121B EUROPEAN PROJECTION ISSUE DATE 99-03-29 Rev. 06 - 24 January 2007 17 of 19 BLF177 NXP Semiconductors HF/VHF power MOS transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General -- Information in this document is believed to be accurate and reliable. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 06 - 24 January 2007 18 of 19 BLF177 NXP Semiconductors HF/VHF power MOS transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BLF177_N_6 20070124 Product data sheet - BLF177_5 Modifications: * * * * correction made to figure title of Fig.13 correction made to note 2 on page 9 correction made to note 2 on page 13 correction made to figure note of Fig.20 BLF177_5 (9397 750 14416) 20041217 Product specification - BLF177_4 BLF177_4 (9397 750 11579) 20030721 Product specification - BLF177_3 BLF177_3 (9397 750 04059) 19980702 Product specification - BLF177_CNV_2 BLF177_CNV_2 (9397 750 xxxxx) 19971216 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 January 2007 Document identifier: BLF177_N_6 Rev. 06 - 24 January 2007 19 of 19