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NXP Semiconductors
BLF177
HF/VHF power MOS transistor
Rev. 06 — 24 January 2007 Product data sheet
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
FEATURES
•High power gain
•Low intermodulation distortion
•Easy power control
•Good thermal stability
•Withstands full load mismatch.
APPLICATIONS
•Designed for industrial and military
applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
Amarkingcode,showinggate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischarge duringtransport andhandling. Forfurther information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
a
ndbook, halfpage
MLA876
43
21
s
d
g
MBB072
Fig.1 Simplified outline (SOT121B) and symbol.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF
OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) d3
(dB) d5
(dB)
SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30
CW class-B 108 50 150 typ. 19 typ. 70 −−
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −125 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −16 A
Ptot total power dissipation Tmb ≤25 °C−220 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base max. 0.8 K/W
Rth mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W
handbook, halfpage
102
10
1
10−1
MRA906
110 VDS (V)
ID
(A)
102103
(1) (2)
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
0
300
200
100
050
(2)
(1)
100 150
MGP089
Ptot
(W)
Th (°C)
Fig.3 Power derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID= 100 mA; VGS = 0 125 −−V
IDSS drain-source leakage current VGS = 0; VDS =50V −−2.5 mA
IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
VGSth gate-source threshold voltage ID= 50 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
matched pairs ID= 50 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 5 A; VDS = 10 V 4.5 6.2 −S
RDSon drain-source on-state resistance ID= 5 A; VGS =10V −0.2 0.3 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −25 −A
Cis input capacitance VGS = 0; VDS =50V; f=1MHz −480 −pF
Cos output capacitance VGS = 0; VDS =50V; f=1MHz −190 −pF
Crs feedback capacitance VGS = 0; VDS =50V; f=1MHz −14 −pF
VGS group indication
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
−5
MGP090
10−111010−2
−4
−3
−2
−1
ID (A)
T.C.
(mV/K)
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values.
VDS = 10 V; valid for Th=25to70°C.
handbook, halfpage
0
30
20
10
051015
MGP091
ID
(A)
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS =10V.
handbook, halfpage
0
400
300
200
100 50 100 150
MGP092
RDSon
(mΩ)
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
ID= 5 A; VGS =10V.
handbook, halfpage
0
1200
800
400
020 40
Cis
Cos
60
VDS (V)
C
(pF)
MBK408
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
300
200
100
010 5020 30 40
MGP093
Crs
(pF)
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
Th=25°C; Rth mb-h = 0.2 K/W; ZL= 6.25 + j0 Ω; f1= 28.000 MHz; f2= 28.001 MHz unless otherwise specified.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; VDS = 50 V at rated output power.
MODE OF
OPERATION f
(MHz) VDS
(V) IDQ
(A) PL
(W) Gp
(dB) ηD
(%)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
SSB, class-AB 28 50 0.7 20 to 150
(PEP) >20
typ. 35 >35
typ. 40 <−30
typ. −35 <−30
typ. −38
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
30
20
10
0100 200
MGP096
Gp
(dB)
PL (W) PEP
Fig.9 Power gain as a function of load power;
typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS =5Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
60
40
20
0100 200
MGP094
ηD
(%)
PL (W) PEP
Fig.10 Two tone efficiency as a function of load
power; typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS =5Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−40
−30
−50
−60 100 200
MGP097
d3
(dB)
PL (W) PEP
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS =5Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−40
−30
−50
−60 100 200
MGP098
d5
(dB)
PL (W) PEP
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS =5Ω; f1= 28.000 MHz; f2= 28.001 MHz.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, full pagewidth
MGP095
input
50 Ω
C1
C5 C6
C8
L1 L2 D.U.T. L3 L6
L4
R2R1
R3R4
C4
C2
+VG
C3
C13
C10
C9
C11
C12
C15
+VD
C14
L5
R5 C7
output
50 Ω
Fig.13 Test circuit for class-AB operation.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
List of components class-AB test circuit (see Fig.13)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm (Rogers 5880).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2 multilayer ceramic chip capacitor
(note 1) 56 pF
C3, C11 multilayer ceramic chip capacitor
(note 1) 62 pF
C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor 3 ×100 nF 2222 852 47104
C8 electrolytic capacitor 2.2 µF, 63 V
C9, C10 multilayer ceramic chip capacitor
(note 1) 20 pF
C12 multilayer ceramic chip capacitor
(note 1) 100 pF
C15 multilayer ceramic chip capacitor
(note 1) 150 pF
L1 5 turns enamelled 0.7 mm copper
wire 133 nH length 4.5 mm; int.
dia. 6 mm; leads
2×5mm
L2, L3 stripline (note 2) 41.1 Ωlength 13 ×6mm
L4 7 turns enamelled 1.5 mm copper
wire 236 nH length 12.5 mm;
int. dia. 8 mm;
leads 2 ×5mm
L5 grade 3B Ferroxcube wideband HF
choke 4312 020 36642
L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm;
int. dia. 8 mm;
leads 2 ×5mm
R1, R2 metal film resistor 10 Ω, 1 W
R2 metal film resistor 10 kΩ, 0.4 W
R3 metal film resistor 1 MΩ, 0.4 W
R5 metal film resistor 10 kΩ, 1 W
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
10
5
0
−510 20 30
MGP099
Zi
(Ω)
ri
xi
f (MHz)
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL= 150 W (PEP); RGS = 6.25 Ω; RL= 6.25 Ω.
handbook, halfpage
0
30
20
10
010 20 30
MGP100
Gp
(dB)
f (MHz)
Fig.15 Power gain as a function of frequency;
typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL= 150 W (PEP); RGS = 6.25 Ω; RL= 6.25 Ω.
APPLICATION INFORMATION FOR CLASS-B OPERATION
RF performance in CW operation in a common source class-B test circuit (see Fig.19).
Th=25°C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ωunless otherwise specified.
MODE OF
OPERATION f
(MHz) VDS
(V) IDQ
(A) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 108 50 0.1 150 typ. 19 typ. 70
Rev. 06 - 24 January 2007
10 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0 100 200
30
10
0
20
MGP101
Gp
(dB)
PL (W)
Fig.16 Power gain as a function of load power;
typical values.
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
handbook, halfpage
0
100
50
0100 200
MGP102
ηD
(%)
PL (W)
Fig.17 Two tone efficiency as a function of load
power; typical values.
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
handbook, halfpage
012 4
200
0
100
3
MGP103
PL
(W)
PIN (W)
Fig.18 Load power as a function of input power;
typical values.
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, full pagewidth
MGP104
input
50 Ω
C1
C7
C6 C11
C19
L1 L3
D.U.T.
BLF177 L4 L8
L5
R2R1
R3
R5
R4
C2 C5
C3 C4
C16
C14
C13 C15
C17
+VD
L7 C18
L6
R6 C12
C9 C10
output
50 Ω
L2
C8
Fig.19 Test circuit for class-B operation at 108 MHz.
Rev. 06 - 24 January 2007
12 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
List of components class-B test circuit (see Fig.19)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm (Rogers 5880).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004
C3 multilayer ceramic chip capacitor
(note 1) 20 pF
C4, C5 multilayer ceramic chip capacitor
(note 1) 62 pF
C6, C7, C9, C10 multilayer ceramic chip capacitor
(note 1) 1nF
C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C12 multilayer ceramic chip capacitor 3 ×100 nF 2222 852 47104
C13, C14 multilayer ceramic chip capacitor
(note 1) 36 pF
C15 multilayer ceramic chip capacitor
(note 1) 12 pF
C17 multilayer ceramic chip capacitor
(note 1) 5.6 pF
C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478
L1 3 turns enamelled 0.8 mm copper
wire 22 nH length 5.5 mm;
int. dia. 3 mm;
leads 2 ×5mm
L2 stripline (note 2) 64.7 Ω31 ×3mm
L3, L4 stripline (note 2) 41.1 Ω10 ×6mm
L5 6 turns enamelled 1.6 mm copper
wire 122 nH length 13.8 mm;
int. dia. 6 mm;
leads 2 ×5mm
L6 grade 3B Ferroxcube wideband HF
choke 4312 020 36642
L7 1 turn enamelled 1.6 mm copper
wire 16.5 nH int. dia. 9 mm;
leads 2 ×5mm
L8 2 turns enamelled 1.6 mm copper
wire 34.4 nH length 3.9 mm;
int. dia. 6 mm;
leads 2 ×5mm
R1, R2 metal film resistor 31.6 Ω, 1 W
R3 metal film resistor 1 kΩ, 0.4 W
R4 cermet potentiometer 5 kΩ
R5 metal film resistor 44.2 kΩ, 0.4 W
R6 metal film resistor 10 Ω, 1W
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, full pagewidth
MGP105
174
70
strap
strap strap
rivet
C1 C2
C3 C4
C8
C6
C7
C5
L2
L1 L3
R1 R2
R3
R4
L4 L7
L5
L8
C14
C13
C12
+VD
R6
L6
R5
C10
C11
C9
C15
C19
C16 C18
C17
Fig.20 Component layout for 108 MHz class-B test circuit.
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0 200
4
−6
−4
MGP107
−2
0
2
100
ri
xi
Zi
(Ω)
f (MHz)
Fig.21 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS =50V;I
DQ = 0.1 A;
PL= 150 W; RGS =15Ω.
handbook, halfpage
0 200
10
0
2
MGP108
4
6
8
100
XL
ZL
(Ω)
f (MHz)
RL
Fig.22 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS =50V;I
DQ = 0.1 A;
PL= 150 W; RGS =15Ω.
handbook, halfpage
MBA379
ZiZL
Fig.23 Definition of transistor impedance.
handbook, halfpage
0 200
30
10
0
20
100
MGP109
Gp
(dB)
f (MHz)
Fig.24 Power gain as a function of frequency;
typical values.
Class-B operation; VDS =50V;I
DQ = 0.1 A;
PL= 150 W; RGS =15Ω.
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
BLF177 scattering parameters
VDS = 50 V; ID= 100 mA; note 1.
Note
1. For more extensive s-parameters see internet website:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.86 −110.20 36.90 114.20 0.02 25.20 0.64 −84.90
10 0.83 −139.40 20.39 93.30 0.02 5.10 0.55 −112.00
20 0.85 −155.70 9.82 72.60 0.02 −13.40 0.60 −129.30
30 0.88 −161.50 5.96 59.30 0.02 −24.70 0.69 −138.00
40 0.90 −164.90 3.98 49.30 0.02 −31.70 0.76 −144.30
50 0.92 −167.10 2.83 41.90 0.01 −35.80 0.82 −149.30
60 0.94 −169.00 2.11 36.00 0.01 −36.80 0.86 −153.50
70 0.96 −170.70 1.63 31.20 0.01 −33.70 0.89 −157.00
80 0.96 −172.20 1.29 27.40 0.00 −23.00 0.91 −159.90
90 0.97 −173.40 1.04 24.20 0.00 3.30 0.92 −162.40
100 0.97 −174.30 0.86 21.70 0.00 42.50 0.94 −164.50
125 0.99 −176.50 0.57 16.40 0.01 81.60 0.95 −168.80
150 0.99 −178.10 0.40 13.40 0.01 88.70 0.97 −171.90
175 0.99 −179.80 0.30 11.60 0.02 90.70 0.98 −174.50
200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 −176.70
250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80
300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90
350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30
400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90
450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60
500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40
600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10
700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90
800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80
900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60
1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20
Rev. 06 - 24 January 2007
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NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT121B 99-03-29
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B
12
43
U3
D1
U2
H
H
b
Q
D
U1
q
A
F
c
p
w1
M M M
M M
w2
B
C
C
A
AB
α
0.25
UNIT A
mm
Db
5.82
5.56 0.16
0.10 12.86
12.59 12.83
12.57 28.45
25.52 3.30
3.05 6.48
6.22
7.27
6.17
cD1U3
U2
12.32
12.06 0.51
w1w2
45°
αU1
24.90
24.63
Q
4.45
3.91
q
18.42
F
2.67
2.41
0.01
inches 0.229
0.219 0.006
0.004 0.506
0.496 0.505
0.495 1.120
1.005 0.130
0.120 0.255
0.245
0.286
0.243 0.485
0.475 0.02
0.98
0.97
0.175
0.154 0.725
0.105
0.095
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Rev. 06 - 24 January 2007
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NXP Semiconductors BLF177
HF/VHF power MOS transistor
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
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malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 06 - 24 January 2007
18 of 19
NXP Semiconductors BLF177
HF/VHF power MOS transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 January 2007
Document identifier: BLF177_N_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF177_N_6 20070124 Product data sheet - BLF177_5
Modifications: •correction made to figure title of Fig.13
•correction made to note 2 on page 9
•correction made to note 2 on page 13
•correction made to figure note of Fig.20
BLF177_5
(9397 750 14416) 20041217 Product specification - BLF177_4
BLF177_4
(9397 750 11579) 20030721 Product specification - BLF177_3
BLF177_3
(9397 750 04059) 19980702 Product specification - BLF177_CNV_2
BLF177_CNV_2
(9397 750 xxxxx) 19971216 Product specification - -
Rev. 06 - 24 January 2007
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