BC856AW - BC858CW PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR SPICE MODELS: BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW Features * * * * Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846W-BC848W) For Switching and AF Amplifier Applications Also Available in Lead Free Version SOT-323 A C B C Mechanical Data * * * * * * * * * B Case: SOT-323, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 2 Pin Connections: See Diagram Marking Code: See Table Below & Diagram on Page 2 Ordering & Date Code Information: See Page 2 Approx. Weight: 0.006 grams E G H K M J D F L Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0 8 All Dimensions in mm Marking Code (Note 2) Type Marking Type BC856AW K3A BC857CW Marking K3G BC856BW K3B BC858AW K3J, K3A, K3V BC857AW K3V, K3A BC858BW K3K, K3B, K3W BC857BW K3W, K3B BC858CW K3L, K3G Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Value Unit BC856 BC857 BC858 VCBO -80 -50 -30 V BC856 BC857 BC858 VCEO -65 -45 -30 V VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Collector Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: Pd 200 mW RqJA 625 C/W Tj, TSTG -65 to +150 C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Current gain subgroup "C" is not available for BC856W. DS30251 Rev. 4 - 2 1 of 3 www.diodes.com BC856AW - BC858CW a Diodes Incorporated Electrical Characteristics @ TA =25C unless otherwise specified Characteristic Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Symbol Min Typ Max Unit BC856 BC857 BC858 V(BR)CBO -80 -50 -30 -- -- -- -- -- -- Test Condition V IC = 10mA, IB = 0 BC856 BC857 BC858 V(BR)CEO -65 -45 -30 -- -- -- -- -- -- V IC = 10mA, IB = 0 V(BR)EBO -5 -- -- V IE = 1mA, IC = 0 hFE 125 220 420 180 290 520 250 475 800 -- VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) -- -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) -- -- -700 -850 -- -950 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 -- -650 -- -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA ICBO ICBO -- -- -- -- -15 -4.0 nA A VCB = -30V VCB = -30V, TA = 150C fT 100 200 -- MHz VCE = -5.0V, IC = -10mA, f = 100MHz CCBO -- 3 4.5 pF VCB = -10V, f = 1.0MHz NF -- -- 10 dB VCE = -5.0V, IC = 200A, RS = 2kW, f = 1kHz, Df = 200Hz Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Current Gain Group A B C Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 3. Short duration pulse test to minimize self-heating effect. Ordering Information Notes: (Note 4) Device Packaging Shipping BC85xxW-7* SOT-323 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = device type, e.g. BC856AW-7. 5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: BC856AW-7-F. Marking Information YM XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30251 Rev. 4 - 2 2 of 3 www.diodes.com BC856AW - BC858CW 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 IC IB = 10 0.4 0.3 TA = 25C TA = 150C 0.2 0.1 TA = -50C 0 0 0 25 50 75 100 125 150 200 175 0.1 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 100 1000 TA = 150C 100 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current VCE = 5V TA = 25C TA = -50C 10 ft, GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN (NORMALIZED) 1000 1 VCE = 5V 100 10 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain (Group B) vs. Collector Current DS30251 Rev. 4 - 2 3 of 3 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current BC856AW - BC858CW