SKP02N60
1 Rev. 2.2 Sep 07
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat) Tj Marking Package
SKP02N60 600V 2A 2.2V
150°C K06N60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C
IC
6.0
2.9
Pulsed collector current, tp limited by Tjmax ICpuls 12
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
- 12
Diode forward current
TC = 25°C
TC = 100°C
IF
6.0
2.9
Diode pulsed current, tp limited by Tjmax IFpuls 12
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC 10 µs
Power dissipation
TC = 25°C
Ptot 30 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Ts 260 °C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
(TO-220AB)
G
C
E
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SKP02N60
2 Rev. 2.2 Sep 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 4.2
Diode thermal resistance,
junction – case
RthJCD 7
Thermal resistance,
junction – ambient
RthJA PG-TO-220-3-1 62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
1.7
-
1.9
2.2
2.4
2.7
Diode forward voltage
VF VGE=0V, IF=2.9A
Tj=25°C
Tj=150°C
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage VGE(th) IC=150µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
20
250
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=2A - 1.6 - S
Dynamic Characteristic
Input capacitance Ciss - 142 170
Output capacitance Coss - 18 22
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 10 12
pF
Gate charge QGate VCC=480V, IC=2A
VGE=15V
- 14 18 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE -
7
-
nH
Short circuit collector current2) IC(SC) VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
- 20 - A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
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SKP02N60
3 Rev. 2.2 Sep 07
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 20 24
Rise time tr - 13 16
Turn-off delay time td(off) - 259 311
Fall time tf - 52 62
ns
Turn-on energy Eon - 0.036 0.041
Turn-off energy Eoff - 0.028 0.036
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=2A,
VGE=0/15V,
RG=118Ω,
L
σ
1) =180nH,
C
σ
1) =180pF
Energy losses include
“tail” and diode
reverse recovery. - 0.064 0.078
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr
tS
tF
-
-
-
130
12
118
-
-
-
ns
Diode reverse recovery charge Qrr - 65 - nC
Diode peak reverse recovery current Irrm - 1.9 - A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25°C,
VR=200V, IF=2.9A,
diF/dt=200A/µs
- 180 -
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 20 24
Rise time tr - 14 17
Turn-off delay time td(off) - 287 344
Fall time tf - 67 80
ns
Turn-on energy Eon - 0.054 0.062
Turn-off energy Eoff - 0.043 0.056
Total switching energy Ets
Tj=150°C
VCC=400V,
IC=2A,
VGE=0/15V,
RG=118Ω,
L
σ
1) =180nH,
C
σ
1) =180pF
Energy losses include
“tail” and diode
reverse recovery. - 0.097 0.118
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr
tS
tF
-
-
-
150
19
131
-
-
-
ns
Diode reverse recovery charge Qrr - 150 - nC
Diode peak reverse recovery current Irrm - 3.8 - A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=150°C
VR=200V, IF=2.9A,
diF/dt=200A/µs
- 200 -
A/µs
1) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
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SKP02N60
4 Rev. 2.2 Sep 07
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
2A
4A
6A
8A
10A
12A
14A
16A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0
.01A
0.1A
1A
10A
DC
1ms
200µs
50µs
15µs
tp=2µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
5W
10W
15W
20W
25W
30W
35W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C
0A
1A
2A
3A
4A
5A
6A
7A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Ic
Ic
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SKP02N60
5 Rev. 2.2 Sep 07
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
1A
2A
3A
4A
5A
6A
7
A
15V
13V
11V
9V
7V
5V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
1A
2A
3A
4A
5A
6A
7A
15V
13V
11V
9V
7V
5V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V
0A
1A
2A
3A
4A
5A
6A
7A
8A
-55°C
+150°C
Tj=+25°C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
IC = 2A
IC = 4A
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SKP02N60
6 Rev. 2.2 Sep 07
t, SWITCHING TIMES
0A 1A 2A 3A 4A 5A
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0Ω100Ω200Ω300Ω400Ω
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.15mA)
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SKP02N60
7 Rev. 2.2 Sep 07
E, SWITCHING ENERGY LOSSES
0A 1A 2A 3A 4A 5A
0.0mJ
0.1mJ
0.2mJ
Eon*
Eoff
Ets*
E, SWITCHING ENERGY LOSSES
0Ω100Ω200Ω300Ω400Ω
0.0mJ
0.1mJ
0.2mJ
Ets*
Eon*
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0.0mJ
0.1mJ
0.2mJ
Ets*
Eon*
Eoff
ZthJC, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1
s
10-2K/W
10-1K/W
100K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(K/W)
τ
, (s)
1.026 0.035
1.3 3.62*10-3
1.69 4.02*10-4
0.183 4.21*10-5
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SKP02N60
8 Rev. 2.2 Sep 07
VGE, GATE-EMITTER VOLTAGE
0nC 5nC 10nC 15nC
0V
5V
10V
15V
20V
25V
480V120V
C, CAPACITANCE
0V 10V 20V 30V
10pF
100pF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
tsc, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0µs
5µs
10µs
15µs
20µs
25
µ
s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
10A
20A
30A
40A
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V,Tj = 150°C)
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SKP02N60
9 Rev. 2.2 Sep 07
trr, REVERSE RECOVERY TIME
20A/µs 60A/µs100A/µs 140A/µs180A/µs
0ns
100ns
200ns
300ns
400ns
500ns
IF = 1A
IF = 2A
IF = 4A
Qrr, REVERSE RECOVERY CHARGE
20A/µs60A/µs100A/µs 140A/µs 180A/µs
0nC
40nC
80nC
120nC
160nC
200nC
240nC
280nC
IF = 1A
IF = 2A
IF = 4A
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
Irr, REVERSE RECOVERY CURRENT
20A/µs 60A/µs 100A/µs 140A/µs 180A/µs
0A
1A
2A
3A
4A
5A
IF = 1A
IF = 4A
IF = 2A
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
20A/µs 60A/µs 100A/µs 140A/µs 180A/µs
0A/µs
50A/µs
100A/µs
150A/µs
200A/µs
250A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
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SKP02N60
10 Rev. 2.2 Sep 07
IF, FORWARD CURRENT
0.0V 0.5V 1.0V 1.5V 2.0V
0A
1A
2A
3A
4A
100°C
-55°C
25°C
150°C
VF, FORWARD VOLTAGE
-40°C 0°C 40°C 80°C 120°C
1.0V
1.5V
2.0V
2.5V
VF, FORWARD VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1s
10-2K/W
10-1K/W
100K/W
101K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
IF
= 2A
IF
= 4
A
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(K/W)
τ
, (s)
0.830 6.40*10-3
2.240 8.79*10-4
3.930 1.19*10-4
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SKP02N60
11 Rev. 2.2 Sep 07
PG-TO220-3-1
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SKP02N60
12 Rev. 2.2 Sep 07
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH
an d Stray capacity Cσ =180pF.
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SKP02N60
13 Rev. 2.2 Sep 07
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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