BC80716MTF - ON SEMICONDUCTOR

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BC807 / BC808 — PNP Epit axial Silicon Transistor

BC807 / BC808 Rev. 1.1.0 1

November 2014

BC807 / BC808

PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for AF-Driver Stages and Low Power Output Stages

• Complement to BC817 / BC818

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Marking Package Packing Method

BC80716MTF 9FA SOT-23 3L Tape and Reel

BC80725MTF 9FB SOT-23 3L Tape and Reel

BC80740MTF 9FC SOT-23 3L Tape and Reel

BC80840MTF 9GC SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCES Collector-Emitter Voltage BC807 -50 V

BC808 -30

VCEO Collector-Emitter Voltage BC807 -45 V

BC808 -25

VEBO Emitter-Base Voltage -5 V

ICCollector Current (DC) -800 mA

TJJunction Temperat ure 150 °C

TSTG Storage Temperature -65 to +150 °C

SOT-23

1. Base 2. Emitter 3. Collector

BC807 / BC808 — PNP Epit axial Silicon Transistor

BC807 / BC808 Rev. 1.1.0 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

hFE Classification

Symbol Parameter Value Unit

PDPower Dissipation 310 mW

Derate Above 2 5°C2.48mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCEO Collector-Emitter Breakdown

Voltage BC807 IC = -10 mA, IB = 0 -45 V

BC808 -25

BVCES Collector-Emitter Breakdown

Voltage BC807 IC = -0.1 mA, VBE = 0 -50 V

BC808 -30

BVEBO Emitter-Base Br eakdown Voltage IE = -0.1 mA, IC = 0 -5 V

ICES Collector Cut-Off Current VCE = -25 V, VBE = 0 -100 nA

IEBO Emitter Cut-Off Current VEB = -4 V, IC = 0 -100 nA

hFE1 DC Current Gain VCE = -1 V, IC = -100 mA 100 630

hFE2 VCE = -1 V, IC = -300 mA 60

VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.7 V

VBE(on) Base-Emitter On Voltage VCE = -1 V, IC = -300 mA -1.2 V

fTCurrent Gain Bandwidth Product VCE = -5 V, IC = -10 mA,

f = 50 MHz 100 MHz

Cob Output Capacitance VCB = -10 V, f = 1 MHz 12 pF

Classification 16 25 40

hFE1 100 ~ 250 160 ~ 400 250 ~ 630

hFE2 60 ~ 100 ~ 170 ~

BC807 / BC808 — PNP Epit axial Silicon Transistor

BC807 / BC808 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. Static Characteristic

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance

-0 -1 -2 -3 -4 -5

-0

-100

-200

-300

-400

-500

= 600mW

IB = - 3.0mA

IB = - 2.0mA

IB = - 3.5mA

IB = - 1.0mA

= - 1.5mA

IB = - 0.5mA

IB = - 4.0mA

IB = - 2.5mA

IB = - 4.5mA

IB = - 5.0mA

IB = 0

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0 -10 -20 -30 -40 -50

-0

-4

-8

-12

-16

-20

= 600mW

= - 80μA

= - 70μA

= - 60μA

= - 50μA

= - 40μA

= - 30μA

= - 20

= - 10μA

IB = 0

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100 -1000

100

1000 PULSE

- 1.0V

VCE = - 2.0V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100 -1000

-0.01

-0.1

-1

-10

IC = 10 IB

PULSE

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

-0.4 -0.5 -0.6 -0.7 -0.8 -0.9

-0.1

-1

-10

-100

-1000

VCE = -1V

PULSE

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

-0.1 -1 -10 -100

100

Cib

f = 1.0MHz

Cob

Cib, Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

VEB[V], EMITTER-BASE VOLTAGE

BC807 / BC808 — PNP Epit axial Silicon Transistor

BC807 / BC808 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Current Gain Bandwidth Product

-1 -10 -100

100

1000

VCE = -5.0V

fT[MHz], GAIN BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

BC807 / BC808 — PNP Epit axial Silicon Transistor

BC807 / BC808 Rev. 1.1.0 5

Physical Dimensions

Figure 8. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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Rev. I72

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