BLF7G27L-200PB,118 - NXP Semiconductors

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

2600 MHz to 2700 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2600 MHz to 2700 MHz frequency range

BLF7G27L-200PB

Power LDMOS transistor

Rev. 3 — 1 September 2015 Product data sheet

Table 1. Typical performance

Ty pical RF performance at Tcase = 25



C in a common source class-AB production test circuit.

Mode of operation f IDq VDS PL(AV) GpDACPR

(MHz) (mA) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 2620 to 2690 1700 32 65 16.5 29 30[1]

Product data sheet Rev. 3 — 1 September 2015 2 of 14

BLF7G27L-200PB

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source [1]

6, 7 sense drain

8, 9 sense gate

61 27

83 49

sym127

3 8, 9

6, 7

Table 3. Ordering information

Type number Package

Name Description Version

BLF7G27L-200PB - flanged LDMOST ceramic package; 2 mounting holes;

8 leads

SOT1110A

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL=65W;

VDS =32V; I

Dq =1700mA

0.22 K/W

Product data sheet Rev. 3 — 1 September 2015 3 of 14

BLF7G27L-200PB

Power LDMOS transistor

6. Characteristics

7. Test information

Remark: All testing performed in a class-AB production test circuit.

7.1 Ruggedness in class-AB operation

The BLF7G27L-200PB is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;

IDq = 1700 mA; PL= 200 W (CW); f = 2600 MHz.

Table 6. Characteristics

Tj = 25



C per section, unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=1.44mA65--V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 144 mA 1.5 1.9 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V --2.8A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

-28-A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 280 nA

gfs forward transconductance VDS =10V; I

D= 7.2 A - 10.6 - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID=5.04A

-0.1-

IDq quiescent drain current main transistor:

VDS = 32 V

sense transistor:

IDS = 31 mA

VDS = 30.1 V

1530 1700 1870 mA

Table 7. Functional test information

Mode of operation: 2-carrier W-CDMA, PAR = 8.4 dB at 0.01 % probability on the CCDF, 3GPP test

model 1; 1-64 DPCH; f1= 2622.5 MHz; f2= 2627.5 MHz; f3= 2682.5 MHz; f4= 2687.5 MHz;

RF performance at VDS =32V; I

Dq =1700mA; T

case =25



C; unless otherwise specified; in a

class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

PL(AV) average output power - 65 - W

Gppower gain 14.8 16.5 17.7 dB

RLin input return loss - 15 5dB

Ddrain efficiency 25.5 29 - %

ACPR adjacent channel power ratio - 30 27 dBc

Product data sheet Rev. 3 — 1 September 2015 4 of 14

BLF7G27L-200PB

Power LDMOS transistor

7.2 Impedance information

[1] ZS and ZL defined in Figure 1.

7.3 1 Tone CW

Table 8. Typical impedance

Measured load-pull data half device; IDq = 850 mA; VDS = 32 V.

f ZS[1] ZL[1]

(MHz) () ()

2500 3.07  j3.51 2.79  j4.86

2600 4.51  j12.51 2.61  j4.49

2700 7.56  j15.0 2.36  j4.41

Fig 1. Definition of transistor impedance

001aaf059

drain

gate

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

Fig 2. Power gain as a function of average load

power; typical values

Fig 3. Drain efficiency as a function of average load

power; typical values

aaa-002645

0 50 100 150 200 250 300

PL(AV) (W)

(dB)

(2)

(1)

(3)

aaa-002647

0 50 100 150 200 250

PL(AV) (W)

ηD

(%)

(3)

(1)

(2)

Product data sheet Rev. 3 — 1 September 2015 5 of 14

BLF7G27L-200PB

Power LDMOS transistor

7.4 1-carrier W-CDMA

VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01 

probability on the CCDF.

(1) Gp; f = 2620 MHz

(2) Gp; f = 2650 MHz

(3) Gp; f = 2690 MHz

(4) D; f = 2620 MHz

(5) D; f = 2650 MHz

(6) D; f = 2690 MHz

VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01 

probability on the CCDF.

(1) f = 2620 MHz

(2) f = 2650 MHz

(3) f = 2690 MHz

Fig 4. Power gain and drain efficiency as function of

average load power; typical values

Fig 5. Peak-to-average power ratio as a function of

peak power; typical values

VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF.

(1) f = 2620 MHz

(2) f = 2650 MHz

(3) f = 2690 MHz

Fig 6. Adjacent power channel ratio (5 MHz) as a function of average load power; typical values

aaa-002648

0 25 50 75 100 125

14 5

15 15

16 25

17 35

18 45

PL(AV) (W)

(dB)

ηD

(%)

(6)

(5)

(4)

(2)

(1)

(3)

aaa-002649

0 25 50 75 100 125

PL(AV) (W)

PAR

(dB)

(1)

(2)

(3)

aaa-002650

0 25 50 75 100 125

-55

-50

-45

-40

-35

-30

-25

PL(AV) (W)

ACPR5M

(dBc)

(1)

(2)

(3)

Product data sheet Rev. 3 — 1 September 2015 6 of 14

BLF7G27L-200PB

Power LDMOS transistor

7.5 2-carrier W-CDMA

VDS = 32 V; IDq = 1700 mA; f = 2650 MHz;

channel spacing = 5 MHz; PAR = 8.4 dB at 0.01 

probability on the CCDF.

VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;

PAR = 8.4 dB at 0.01  probability on the CCDF.

(1) f = 2620 MHz

(2) f = 2650 MHz

(3) f = 2690 MHz

Fig 7. Power gain and drain efficiency as function of

average load power; typical values

Fig 8. Power gain as a function of average load

power; typical values

VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;

PAR = 8.4 dB at 0.01  probability on the CCDF.

(1) f = 2620 MHz

(2) f = 2650 MHz

(3) f = 2690 MHz

VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;

PAR = 8.4 dB at 0.01  probability on the CCDF.

(1) f = 2620 MHz

(2) f = 2650 MHz

(3) f = 2690 MHz

Fig 9. Drain efficiency as a function of average load

power; typical values

Fig 10. Adjacent power channel ratio (5 MHz) as a

function of average load power; typical values

aaa-002651

0 25 50 75 100 125

15.8 0.0

16.2 10.0

16.6 20.0

17.0 30.0

17.4 40.0

PL(AV) (W)

(dB)

ηD

(%)

ηD

aaa-002652

0 25 50 75 100 125

15.8

16.2

16.6

17.0

17.4

PL(AV) (W)

(dB)

(3)

(2)

(1)

aaa-002653

0 25 50 75 100 125

PL(AV) (W)

ηD

(%)

(3)

(2)

(1)

aaa-002654

0 25 50 75 100 125

-55

-45

-35

-25

-15

PL(AV) (W)

ACPR5M

(dBc)

(3)

(1)

(2)

Product data sheet Rev. 3 — 1 September 2015 7 of 14

BLF7G27L-200PB

Power LDMOS transistor

7.6 IS-95

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

Fig 11. Single carrier IS-95 power gain as a function of

average output power; typical values

Fig 12. Single carrier IS-95 drain efficiency as a

function of average load power; typical values

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

VDS = 32 V; IDq = 1700 mA.

(1) f = 2600 MHz

(2) f = 2650 MHz

(3) f = 2700 MHz

Fig 13. Single carrier IS-95 ACPR at 885 kHz as a

function of average output power;

typical values

Fig 14. Single carrier IS-95 at ACPR at 1980 kHz as a

function of average output power; typical

values

aaa-002655

0 20 40 60 80 100

15.6

16.0

16.4

16.8

17.2

PL(AV) (W)

(dB)

(1)

(2)

(3)

aaa-002656

0 20 40 60 80 100

PL(AV) (W)

ηD

(%)

(3)

(1)

(2)

aaa-002657

0 20 40 60 80 100

-65

-60

-55

-50

-45

-40

-35

PL(AV) (W)

ACPR885k

(dBc)

(3)

(2)

(1)

aaa-002658

0 20 40 60 80 100

-75

-70

-65

-60

-55

PL(AV)

ACPR1980k

(1)

(3)

(2)

Product data sheet Rev. 3 — 1 September 2015 8 of 14

BLF7G27L-200PB

Power LDMOS transistor

7.7 Test circuit

[1] Murata or capacitor of same quality.

[2] American Technical Ceramics type 100B or capacitor of same quality.

[3] American Technical Ceramics type 100A or capacitor of same quality.

[4] AVX or capacitor of same quality.

[5] TDK or capacitor of same quality.

[6] Philips or resistor of same quality.

See Table 9 for list of components.

Fig 15. Component layout

Table 9. List of components

See Figure 15 for component layout.

The used PCB material is Rogers RO4350B with a thickn ess of 0.76 mm.

Component Description Value Remarks

C1, C6, C13 multilayer ceramic chip capacitor 4.7 F[1] Murata

C2, C4 multilayer ceramic chip capacitor 9.1 pF [2] ATC100B

C3 multilayer ceramic chip capacitor 22 pF [3] ATC100A

C5, C10, C11 multilayer ceramic chip capacitor 8.2 pF [2] ATC100B

C7 multilayer ceramic chip capacitor 470 nF [4] AVX

C8, C12 multilayer ceramic chip capacitor 10 F[5] TDK

C9 electrolytic capacitor 470 F

R1 chip resistor 820 [6] Philips 0603

R2 chip resistor 2K2 [6] Philips 0603

R3 chip resistor 22 [6] Philips 0603

R4, R6 chip resistor 10 [6] Philips 0603

R5 chip resistor 33 [6] Philips 0603

C10

C12

C11

C13

aaa-001942

Product data sheet Rev. 3 — 1 September 2015 9 of 14

BLF7G27L-200PB

Power LDMOS transistor

8. Package outline

Fig 16. Package outline SOT1110A

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1110A 10-02-02

12-02-20

Flanged LDMOST ceramic package; 2 mounting holes; 8 leads SOT1110A

Aw1B

Dw2

61 7

sot1110a_po

Unit(1)

max

nom

min

5.36

3.99

1.14

0.89

0.18

0.10

31.55

30.94

31.52

30.96

9.50

9.30

1.75

1.50

17.12

16.10

3.30

3.05

10.29

10.03

Dimensions

bcDD

1EE

9.53

9.27

FHH

25.53

25.27

(2)

2.26

2.01

35.56

41.28

41.02

U2w1

0.51

inches

max

nom

min

0.211

0.157

0.045

0.035

11.81

11.56

0.465

0.455

0.007

0.004

13.72

0.540

1.242

1.218

1.241

1.219

0.374

0.366

0.069

0.059

0.674

0.634

0.13

0.12

0.405

0.395

0.375

0.365

1.005

0.995

2.67

2.41

0.105

0.095

0.089

0.079

1.4

1.625

1.615

0.25

0.01 0.02

5.97

5.72

0.25

0.235

0.225

64°

62°

64°

62°

0.01

0 5 10 mm

scale

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 3 — 1 September 2015 10 of 14

BLF7G27L-200PB

Power LDMOS transistor

9. Handling information

10. Abbreviations

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

3GPP Third Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor

PAR Peak-to-Average power Ratio

RF Radio Frequency

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Product data sheet Rev. 3 — 1 September 2015 11 of 14

BLF7G27L-200PB

Power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF7G27L-200PB#3 20150901 Product data sheet - BLF7G27L-200PB

v.2

Modifications: •The format of this document has been redesigned to comply with the new

identity guidelines of Ampleon.

•Legal texts have been adapted to the new company name where appropriate.

BLF7G27L-200PB v.2 20120220 Product data sheet - BLF7G27L-200PB_

27LS-200PB v.1

BLF7G27L-200PB_27LS-200PB v.1 20110405 Objective data sheet - -

Product data sheet Rev. 3 — 1 September 2015 12 of 14

BLF7G27L-200PB

Power LDMOS transistor

12. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 1 September 2015 13 of 14

BLF7G27L-200PB

Power LDMOS transistor

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13. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLF7G27L-200PB

Power LDMOS transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLF7G27L-200PB#3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4

7.3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5

7.5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6

7.6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Handling information. . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

NXP:

BLF7G27L-200PB,118 BLF7G27L-200PB,112