BFR93AT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of September 1995

File under discrete semiconductors, SC14

1997 Oct 29

DISCRETE SEMICONDUCTORS

BFR93A

NPN 6 GHz wideband transistor

1997 Oct 29 2

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

FEATURES

•High power gain

•Low noise figure

•Very low intermodulation distortion.

APPLICATIONS

•RF wideband amplifiers and

oscillators.

DESCRIPTION

NPN wideband transistor in a plastic

SOT23 package.

PNP complement: BFT93.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector Fig.1 SOT23.

page

MSB003

Top view

Marking code: R2p.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter −15 V

VCEO collector-emitter voltage open base −12 V

ICcollector current (DC) −35 mA

Ptot total power dissipation Ts≤95 °C−300 mW

Cre feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz 0.6 −pF

fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 6 −GHz

GUM maximum unilateral power gain IC= 30 mA; VCE = 8 V ; f = 1 GHz; Tamb =25°C13 −dB

IC= 30 mA; VCE = 8 V ; f = 2 GHz; Tamb =25°C7 −dB

F noise ﬁgure IC= 5 mA; VCE = 8 V; f = 1 GHz; Γs=Γopt;

Tamb =25°C1.9 −dB

VOoutput voltage dim =−60 dB; IC= 30 mA; VCE =8V;

L=75Ω; Tamb =25°C;

fp+f

q−f

r= 793.25 MHz

425 −mV

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −15 V

VCEO collector-emitter voltage open base −12 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −35 mA

Ptot total power dissipation Ts≤95 °C; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −+175 °C

1997 Oct 29 3

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and .

2. Measured on the same die in a SOT37 package (BFR91A).

3. dim =−60 dB (DIN 45004B); IC= 30 mA; VCE = 8 V; RL=75Ω; Tamb =25°C;

Vp=V

Oat dim =−60 dB; fp= 795.25 MHz;

Vq=V

O−6 dB at fq= 803.25 MHz;

Vr=V

O−6 dB at fr= 805.25 MHz;

measured at fp+f

q−f

r= 793.25 MHz.

4. IC= 30 mA; VCE = 8 V; RL=75Ω; Tamb =25°C;

Vp= 200 mV at fp= 250 MHz;

Vq= 200 mV at fq= 560 MHz;

measured at fp+f

q= 810 MHz.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤95 °C; note 1 260 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =5V −−50 nA

hFE DC current gain IC= 30 mA; VCE = 5 V 40 90 −

Cccollector capacitance IE=i

e= 0; VCB =5V; f=1MHz −0.7 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −1.9 −pF

Cre feedback capacitance IC=i

c= 0; VCE = 5 V; f = 1 MHz;

Tamb =25°C−0.6 −pF

fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 −GHz

GUM maximum unilateral power gain

(note 1) IC= 30 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−13 −dB

IC= 30 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−7−dB

F noise ﬁgure (note 2) IC= 5 mA; VCE = 8 V; f = 1 GHz;

Γs=Γopt; Tamb =25°C−1.9 −dB

IC= 5 mA; VCE = 8 V; f = 2 GHz;

Γs=Γopt; Tamb =25°C−3−dB

VOoutput voltage notes 2 and 3 −425 −mV

d2second order intermodulation

distortion notes 2 and 4 −−50 −dB

GUM 10 log

21 2

11 2

–





22 2

–





-------------------------------------------------------------- dB=

1997 Oct 29 4

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.

L1=L3=5µH choke.

L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.

handbook, full pagewidth

MBB251

18 Ω

1.5 nF

10 kΩL2

1 nF

75 Ω

input

270 Ω

1 nF

1.5 nF

1 nF

0.68 pF

3.3 pF

DUT

75 Ω

output

VCC

VBB

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MBG246

150

Ptot

(mW)

Ts(oC)

Fig.4 DC current gain as a function of

collector current.

VCE = 5 V; Tj=25°C.

handbook, halfpage

0102030

120

MCD087

hFE

I (mA)

1997 Oct 29 5

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

IE=i

e= 0; f = 1 MHz; Tj=25°C.

handbook, halfpage

048 16

0.8

MBB252

0.6

0.4

0.2

(pF)

VCB (V)

Fig.6 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; f = 500 MHz; Tj=25°C.

handbook, halfpage

01020 40

MCD089

30 I (mA)

(GHz)

Fig.7 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 500 MHz.

handbook, halfpage

010 20 40

IC (mA)

gain

(dB)

MBB255

MSG

GUM

Fig.8 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 1 GHz.

handbook, halfpage

010 20 40

MBB256

gain

(dB)

I (mA)

MSG

GUM

1997 Oct 29 6

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.9 Gain as a function of frequency;

typical values.

IC= 10 mA; VCE =8V.

handbook, halfpage

010

MBB257

102103104

gain

(dB)

f (MHz)

MSG

GUM

Gmax

Fig.10 Gain as a function of frequency;

typical values.

IC= 30 mA; VCE =8V.

handbook, halfpage

010

MBB258

102103104

gain

(dB)

f (MHz)

MSG

GUM

Gmax

Fig.11 Circles of constant noise figure;

typical values.

IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C.

handbook, halfpage

02040 80

MBB253

60 G (mS)

(mS)

2.0 2.5

1.6 F = 3.5 dB3.0

Fig.12 Circles of constant noise figure;

typical values.

IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C.

handbook, halfpage

30 20 40 60

MBB254

G (mS)

(mS)

2.5

3.0

3.5

2.3

F = 4.0 dB

1997 Oct 29 7

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MCD094

101

(dB)

I (mA)

f = 2 GHz

500 MHz

1 GHz

102

Fig.14 Minimum noise figure as a function of

frequency; typical values.

VCE =8V.

handbook, halfpage

MCD095

(dB)

f (MHz)

5 mA

10 mA

104

103

102

I = 30 mA

Fig.15 Intermodulation distortion; typical values.

VCE = 8 V; VO= 425 mV (52.6 dBmV);

fp+f

−f

r= 793.25 MHz; Tamb =25°C.

Measured in MATV test circuit (see Fig.2)

handbook, halfpage

MBB263

(dB)

01020 40

I (mA)

dim

Fig.16 Second order intermodulation distortion;

typical values.

VCE = 8 V; VO= 200 mV (46 dBmV);

fp+f

−f

r= 810 MHz; Tamb =25°C.

Measured in MATV test circuit (see Fig.2)

handbook, halfpage

01020 40

MBB264

I (mA)

(dB)

1997 Oct 29 8

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.17 Common emitter input reflection coefficient (S11).

IC= 30 mA; VCE = 8 V; Zo=50Ω; Tamb =25°C.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MBB259

500

200

100 MHz

10.2 1052

0.5

1200

800 1000

Fig.18 Common emitter forward transmission coefficient (S21).

IC= 30 mA; VCE = 8 V; Tamb =25°C.

handbook, full pagewidth

MBB261

30o

60o

90o

120o

150o

180o

150o

120o

90o60o

30o

100

10 20 30

200

500

800

1000

1200 MHz

1997 Oct 29 9

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

Fig.19 Common emitter reverse transmission coefficient (S12).

IC= 30 mA; VCE = 8 V; Tamb =25°C.

handbook, full pagewidth

MBB262

30o

60o

90o

120o

150o

180o

150o

120o

90o60o

30o

200

1200

0.05 0.1 0.15

100 MHz

500

800

1000

Fig.20 Common emitter output reflection coefficient (S22).

IC= 30 mA; VCE = 8 V; Zo=50Ω; Tamb =25°C.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MBB260

10.2 10520.5

1200

800

1000 500

200

100 MHz

1997 Oct 29 10

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1997 Oct 29 11

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFR93A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 29 Document order number: 9397 750 02764