VCE IC = = 3300 V 250 A ABB HiPakTM IGBT Module 5SNG 0250P330300 Doc. No. 5SYA 1406-00 Aug 10 * Ultra low loss, rugged SPT+ chip-set * Smooth switching SPT+ chip-set for good EMC * High insulation package * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj 25 C 3300 V IC Tc = 80 C 250 A Peak collector current ICM tp = 1 ms, Tc = 80 C 500 A 20 V 1950 W 250 A 500 A 2300 A 10 s 6000 V 125 C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 2500 V, VCEM CHIP 3300 V VGE 15 V, Tvj 125 C Isolation voltage Visol RMS, 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 C Case temperature Tc -40 125 C Storage temperature Tstg -40 125 C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M6 screws 4 6 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNG 0250P330300 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 3300 Collector-emitter 4) saturation voltage VCE sat IC = 250 A, VGE = 15 V Tvj = 125 C 3.0 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC mA 20 mA -500 500 nA 5 7 V 6 IC = 250 A, VCE = 1800 V, VGE = -15 V .. 15 V 1830 nC 25.3 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 2.03 nF 0.63 VCC = 1800 V, IC = 250 A, RG = 10 , VGE = 15 V, L = 400 nH, inductive load Tvj = 25 C 400 Tvj = 125 C 400 Tvj = 25 C 180 Tvj = 125 C 195 VCC = 1800 V, IC = 250 A, RG = 10 , VGE = 15 V, L = 400 nH, inductive load Tvj = 25 C 1160 Tvj = 125 C 1330 Tvj = 25 C 270 Tvj = 125 C 390 VCC = 1800 V, IC = 250 A, VGE = 15 V, RG = 10 , L = 400 nH, inductive load Tvj = 25 C 330 Tvj = 125 C 425 VCC = 1800 V, IC = 250 A, VGE = 15 V, RG = 10 , L = 400 nH, inductive load Tvj = 25 C 330 Tvj = 125 C 450 ns ns ns ns mJ mJ tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2500 V, VCEM CHIP 3300 V 1090 A 125 nH L DC between C1 - E2 Resistance, terminal-chip RCC'+EE' between C1 - E2 4) 2 Tvj = 125 C IC = 40 mA, VCE = VGE, Tvj = 25 C Module stray inductance 3) V V VCE = 3300 V, VGE = 0 V Gate charge Unit 2.4 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ TC = 25 C 0.78 TC = 125 C 1.03 m Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 2 of 9 5SNG 0250P330300 Diode characteristic values Parameter Forward voltage 5) Symbol VF 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) Conditions IF = 250 A VCC = 1800 V, IF = 250 A, VGE = 15 V, RG = 10 L = 400 nH inductive load Erec min typ max Tvj = 25 C 2 Tvj = 125 C 2.1 Tvj = 25 C 300 Tvj = 125 C 330 Tvj = 25 C 155 Tvj = 125 C 250 Tvj = 25 C 730 Tvj = 125 C 1260 Tvj = 25 C 165 Tvj = 125 C 280 Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.052 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.100 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) typ max Unit 0.048 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.096 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD 10pC (acc. to IEC 61287) 3500 V 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) min Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Partial discharge extinction voltage 2) Conditions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 73 140 48 da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 35 64 ds Term. to base: according to IEC 60664-1 C1 to E1: and EN 50124-1 C1 to E2: Unit mm mm 19 mm 54 78 m 620 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 3 of 9 5SNG 0250P330300 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 4 of 9 5SNG 0250P330300 500 500 VCE = 20 V 450 400 400 25 C 350 300 125 C IC [A] IC [A] 300 250 200 200 125 C 150 25 C 100 100 50 VGE = 15V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VCE [V] Fig. 1 Fig. 2 Typical on-state characteristics, chip level 7 8 9 10 11 12 13 Typical transfer characteristics, chip level 500 500 17V 450 17V 450 15V 15V 400 400 13V 13V 350 350 11V 11V 300 IC [A] 300 IC [A] 6 VGE [V] 250 9V 250 200 200 150 150 100 100 50 9V 50 Tvj = 25 C Tvj = 125 C 0 0 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 5 of 9 5SNG 0250P330300 1.6 1.2 VCC = 1800 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 400 nH 1.0 VCC = 1800 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 400 nH 1.4 Eon 1.2 Eon 1 Eoff Eon, Eoff [J] Eon, Eoff [J] 0.8 0.6 0.8 0.6 Eoff 0.4 0.4 0.2 0.2 Esw [J] = 1.94 x 10-6 x I C2 +2.61 x 10-3 x I C +0.101 0.0 0 0 100 200 300 400 500 0 20 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 80 Typical switching energies per pulse vs gate resistor VCC = 1800 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 400 nH td(off) tf 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 60 10 10 td(on) 0.1 td(off) 1 tf tr VCC = 1800 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 400 nH 0.01 td(on) tr 0.1 0 100 200 300 400 500 0 IC [A] Fig. 7 40 RG [ohm] Typical switching times vs collector current 10 20 30 40 50 60 70 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 6 of 9 5SNG 0250P330300 100 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 1800 V 15 10 VGE [V] VCC = 2500 V C [nF] Coes 10 1 Cres 5 IC = 250 A Tvj = 25 C 0 0.1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage 0.0 Fig. 10 0.5 1.0 Qg [C] 1.5 2.0 Typical gate charge characteristics 2.5 VCC 2500 V, Tvj = 125 C VGE = 15 V, RG = 10 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 1500 2000 VCE [V] 2500 3000 3500 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 7 of 9 5SNG 0250P330300 600 VCC = 1800 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 400 nH 350 500 300 200 50 0 100 0 0 100 200 300 400 500 0 RG = 47 ohm VCC = 1800 V RG = 10 ohm Tvj = 125 C L = 400 nH RG = 68 ohm 100 500 IF [A] Fig. 12 1000 RG = 3.3 ohm Qrr RG = 4.7 ohm 150 Erec RG = 10 ohm Qrr 200 400 RG = 15 ohm Erec 250 RG = 33 ohm Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Qrr [C] Irr 300 Irr RG = 22 ohm 400 1500 2000 2500 di/dt [kA/s] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 500 500 VCC 2500 V di/dt 2500 A/s Tvj = 125 C L 400 nH 450 400 400 25 C 350 125 C IR [A] 300 IF [A] 300 200 250 200 150 100 100 50 0 0 0 0.5 1 1.5 2 2.5 3 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 1000 2000 3000 4000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1406-00 Aug 10 page 8 of 9 5SNG 0250P330300 1 Analytical function for transient thermal impedance: Z th (j-c) (t) = R i (1 - e -t/ i ) 0.1 i =1 0.01 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 35.1 8.25 3.85 3.79 i(ms) 207.4 30.1 7.6 1.6 DIODE Zth(j-c) [K/W] IGBT, DIODE n Zth(j-c) Diode Ri(K/kW) 69.2 17.3 7.79 7.77 i(ms) 203.6 30.1 7.5 1.6 5 0.001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: * 5SYA 2042 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043 Load - cycle capability of HiPaks * 5SYA 2045 Thermal runaway during blocking * 5SYA 2058 Surge currents for IGBT diodes * 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1406-00 Aug 10