1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
nAverage forward current: IF(AV) ≤3A
nReverse voltage: VR≤40 V
nLow forward voltage
nHigh power capability due to clip-bond technology
nAEC-Q101 qualified
nSmall and flat lead SMD plastic package
1.3 Applications
nLow voltage rectification
nHigh efficiency DC-to-DC conversion
nSwitch Mode Power Supply (SMPS)
nReverse polarity protection
nLow power consumption applications
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 11 August 2009 Product data sheet
Table 1. Quick reference data
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward current square wave;
δ= 0.5;
f=20kHz
Tamb ≤40 °C[1] --3A
Tsp ≤130 °C --3A
VRreverse voltage - - 40 V
VFforward voltage IF= 3 A - 460 540 mV
IRreverse current VR= 40 V - 25 100 µA
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 2 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode 21
sym001
12
Table 3. Ordering information
Type number Package
Name Description Version
PMEG4030ER - plastic surface-mounted package; 2 leads SOD123W
Table 4. Marking codes
Type number Marking code
PMEG4030ER BF
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj=25°C - 40 V
IF(AV) average forward current square wave;
δ= 0.5;
f=20kHz
Tamb ≤40 °C[1] -3A
Tsp ≤130 °C-3A
IFSM non-repetitive peak
forward current square wave;
tp=8ms [2] -50A
Ptot total power dissipation Tamb ≤25 °C[3][4] - 0.57 W
[3][5] - 0.95 W
[3][1] - 1.8 W
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 3 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2]
[3] - - 220 K/W
[4] - - 130 K/W
[5] --70K/W
Rth(j-sp) thermal resistance from
junction to solder point [6] --18K/W
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 4 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab649
10
1
102
103
Zth(j-a)
(K/W)
10−1
tp (s)
10−3102103
10110−210−1
duty cycle =
10.75
0.5 0.33
0.2
0.25
0.1 0.05
0.02 0.01
0
006aab650
10
1
102
103
Zth(j-a)
(K/W)
10−1
tp (s)
10−3102103
10110−210−1
duty cycle =
10.75
0.5 0.33
0.2
0.25
0.1 0.05
0.02 0.01
0
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 5 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab651
tp (s)
10−3102103
10110−210−1
10
1
102
Zth(j-a)
(K/W)
10−1
duty cycle =
10.75
0.5 0.33
0.2
0.25
0.1 0.05
0.02 0.01
0
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 0.1 A - 295 330 mV
IF= 1 A - 380 440 mV
IF= 3 A - 460 540 mV
IRreverse current VR=10V - 5 - µA
VR= 40 V - 25 100 µA
Cddiode capacitance f=1MHz
VR= 1 V - 250 - pF
VR=10V - 95 - pF
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 6 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
(5) Tj=−40 °C
(1) Tj= 125 °C
(2) Tj=85°C
(3) Tj=25°C
(4) Tj=−40 °C
Fig 4. Forward current as a function of forward
voltage; typical values Fig 5. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; Tamb =25°C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
006aab652
10−2
10−3
1
10−1
10
IF
(A)
10−4
VF (V)
0.0 0.70.5 0.60.40.30.1 0.2
(1)
(2)
(3) (4) (5)
006aab653
10−2
10−3
10−4
10−5
10−6
10−7
10−8
IR
(A)
10−9
VR (V)
0403010 20
(1)
(2)
(3)
(4)
VR (V)
0403010 20
006aab654
200
400
600
Cd
(pF)
0
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 7 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
Tj= 150 °C
(1) δ= 0.1
(2) δ= 0.2
(3) δ= 0.5
(4) δ=1
Tj= 125 °C
(1) δ=1
(2) δ= 0.9
(3) δ= 0.8
(4) δ= 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm2
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values Fig 10. Average forward current as a function of
ambient temperature; typical values
IF(AV) (A)
0.0 5.04.02.0 3.01.0
006aab661
1.0
0.5
1.5
2.0
PF(AV)
(W)
0.0
(1)
(2)
(3)
(4)
VR (V)
0403010 20
006aab656
0.4
0.5
0.3
0.2
0.1
0.6
0.7
PR(AV)
(W)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aab662
1.5
3.0
4.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aab663
1.5
3.0
4.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 8 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
Ceramic PCB, Al2O3, standard footprint
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values Fig 12. Average forward current as a function of
solder point temperature; typical values
Tamb (°C)
0 50 100 150 1751257525
006aab664
1.5
3.0
4.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp (°C)
0 50 100 150 1751257525
006aab665
1.5
3.0
4.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 9 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in Figure 9,10,11 and 12 are
calculated according to the equations: with IM defined as peak current,
at DC, and with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
IFAV() IMδ×=
IRMS IFAV()
=IRMS IMδ×=
Fig 14. Package outline SOD123W
08-11-06Dimensions in mm
2.8
2.4
3.7
3.3
1.05
0.75
1.9
1.5
1
2
0.6
0.3
0.22
0.10
1.1
0.9
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 10 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000
PMEG4030ER SOD123W 4 mm pitch, 8 mm tape and reel -115
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOD123W
2.9
2.8
4.4
1.62.1 1.2
(2×)
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
1.1
(2×)
1.2
(2×)
sod123w_fr
Dimensions in mm
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 11 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMEG4030ER_1 20090811 Product data sheet - -
PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 12 of 13
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PMEG4030ER
3 A low VF MEGA Schottky barrier rectifier
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 August 2009
Document identifier: PMEG4030ER_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
