© Semiconductor Components Industries, LLC, 2000
November, 2019 − Rev. 1
1Publication Order Number:
BD136/D
PNP Epitaxial Silicon
Transistor
BD136 Series
BD136 / BD138 / BD140
Applications
•Complement to BD135, BD137 and BD139 Respectively
•These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Max Unit
Collector−Base Voltage
BD136
BD138
BD140
VCBO
−45
−60
−80
V
Collector−Emitter Voltage
BD136
BD138
BD140
VCEO
−45
−60
−80
V
Emitter−Base Voltage VEBO −5 V
Collector Current (DC) IC−1.5 A
Collector Current (Pulse) ICP −3.0 A
Base Current IB−0.5 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Collector Dissipation PC12.5 W
Collector Dissipation (TA = 25°C) PC1.25 W
Junction Temperature TJ150 °C
Storage Temperature Range TSTG −55~150 °C
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TO−126
CASE 340AS
MARKING DIAGRAM
Y = Year
WW = Work Week
BD1XX = Specific Device Code
XX = 36, 38, 40
123
BD1XX
Device Package Shipping
ORDERING INFORMATION
BD13610STU
BD13610S
BD13616STU
TO−126
60 Units/ Tube
(Pb−Free)
YWW
1
2
3
Emitter
Collector
Base
BD13616S
BD13810STU
BD13816STU
BD14010STU
BD14016STU
BD14016S
500 Units/ Bulk Box
60 Units/ Tube
500 Units/ Bulk Box
60 Units/ Tube
60 Units/ Tube
60 Units/ Tube
60 Units/ Tube
500 Units/ Bulk Box
BD136 Series
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1)
BD136
BD138
BD140
IC = −30 mA, IB = 0
−45
−60
−80
V
ICBO Collector Cut−off Current VCB = −30 V, IE = 0 −0.1 mA
IEBO Emitter Cut−off Current VEB = −5 V, IC = 0 −10 mA
hFE1 DC Current Gain (Note 1) VCE = −2 V, IC = −5 mA 25
hFE2 VCE = −2 V, IC = −150 mA
BD13610/BD13810/BD14010
BD13616/BD13816/BD14016
63
100
160
250
hFE3 VCE = −2 V, IC = −500 mA 25
VCE(sat) Collector−Emitter Saturation Voltage
(Note 1)
IC = 500 mA, IB = 50 mA −0.5 V
VBE(on) Base−Emitter ON Voltage (Note 1) VCE = −2 V, IC = −0.5 A −1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed
BD136 Series
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3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Volatage
Figure 3. Base−Emitter Voltage
−10 −100 −1000
0
10
20
30
40
50
60
70
80
90
100
VCE = −2 V
IC[mA], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
−1E−3−0.01 −0.1 −1−10
−0
−50
−100
−150
−200
−250
−300
−350
−400
−450
−500
IC, COLLECTOR CURRENT [A]
VCE(sat), SATURATION VOLTAGE [mV]
IC = 20 IB
IC = 10 IB
−1E−3−0.01 −0.1 −1−10
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
−0.7
−0.8
−0.9
−1.0
−1.1
IC, COLLECTOR CURRENT [A]
VBE, BASE−EMITTER VOLTAGE [V]
VBE(sat)
IC = 10 IB
VBE(on)
VCE = −5 V
−1−10 −100
−0.01
−0.1
−1
−10
IC MAX. (Pulsed)
IC MAX. (Continues)
10 ms
100 ms
1 ms
DC
BD136
BD138
BD140
VCE, COLLECTOR−EMITTER VOLTAGE [V]
IC, COLLECTOR CURRENT [A]
Figure 4. Safe Operating Area
0 25 50 75 100 125 150 175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
TC, CASE TEMPERATURE [°C]
PC, POWER DISSIPATION [W]
Figure 5. Power Derating
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CASE 340AS
ISSUE O
DATE 30 SEP 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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