PLVA656A,215 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 1999 May 25

2004 Jan 14

DISCRETE SEMICONDUCTORS

PLVA6xxA series

Low-voltage avalanche regulator

diodes

ook, halfpage

M3D088

2004 Jan 14 2

NXP Semiconductors Product data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

FEATURES

•Very low dynamic impedance at low currents:

approximately 1⁄20 of conventional series

•Hard breakdown knee

•Low noise: approximately 1⁄10 of conv entional series

•Total power dissipation: max. 250 mW

•Small tolerances of VZ

•Working voltage range: nominal 5.00 to 6.80 V

•Non-repet itive peak reverse power dis sipation:

maximal 30 W.

APPLICATIONS

•Low current, low power, low noise applications

•CMOS RAM back-up circuits

•Voltage stabilizers

•Voltage limiters

•Smoke detector rela ys.

DESCRIPTION

High performance voltage regulator diodes in small

SOT23 plastic SMD packages.

The series consists of PLVA 650A to PLVA668A.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

PLVA650A *9A

PLVA653A *9B

PLVA656A *9C

PLVA659A *9D

PLVA662A *9E

PLVA665A *9F

PLVA668A *9G

PIN DESCRIPTION

1anode

2not connected

3cathode

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM243

n.c. 1

Top view

2004 Jan 14 3

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

ORDERING INFORMATION

LIMITING VALUES

In accordance wi th the Absolute Max imum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed circuit-boa rd.

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PLVA6xxA −plastic surface mounted package; 3 leads SOT23

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZRM repetitive peak working current tp = 100 μs; δ = 10% −250 mA

PZSM non-repetitive peak reverse power diss i pation tp = 100 μs; Tj = 150 °C −30 W

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2004 Jan 14 4

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF = 10 mA −−0.9 V

VZworking voltage IZ = 250 μA

PLVA650A 4.80 5.00 5.20 V

PLVA653A 5.10 5.30 5.50 V

PLVA656A 5.40 5.60 5.80 V

PLVA659A 5.70 5.90 6.10 V

PLVA662A 6.00 6.20 6.40 V

PLVA665A 6.30 6.50 6.70 V

PLVA668A 6.60 6.80 7.00 V

VZworking voltage IZ = 10 μA

PLVA650A −4.30 −V

PLVA653A −5.20 −V

PLVA656A −5.51 −V

PLVA659A −5.85 −V

PLVA662A −6.19 −V

PLVA665A −6.49 −V

PLVA668A −6.80 −V

RZdynamic resistance 1 kHz superimpos ed;

IZAC is 10% of IZDC; IZ = 250 μA

PLVA650A −−700 Ω

PLVA653A −−250 Ω

PLVA656A to PLVA668A −−100 Ω

SZtemperature coefficient IZ = 250 μA

PLVA650A −0.20 −mV/K

PLVA653A −1.60 −mV/K

PLVA656A −1.90 −mV/K

PLVA659A −2.40 −mV/K

PLVA662A −2.65 −mV/K

PLVA665A −2.90 −mV/K

PLVA668A −3.40 −mV/K

IRreverse current VR = 80% VZ nominal

PLVA650A −−20 000 nA

PLVA653A −−5 000 nA

PLVA656A −−1 000 nA

PLVA659A −−500 nA

PLVA662A −−100 nA

PLVA665A −−50 nA

PLVA668A −−10 nA

2004 Jan 14 5

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed circuit-boa rd.

IRreverse current VR = 50% VZ nominal

PLVA650A −34 −nA

PLVA653A −22 −nA

PLVA656A −1.1 −nA

PLVA659A −0.9 −nA

PLVA662A −0.9 −nA

PLVA665A −0.9 −nA

PLVA668A −0.8 −nA

IRreverse current VR = 90% VZ nominal

PLVA650A −21 − μA

PLVA653A −3.5 − μA

PLVA656A −1.3 − μA

PLVA659A −1.0 − μA

PLVA662A −0.05 − μA

PLVA665A −0.04 − μA

PLVA668A −0.006 − μA

ΔVZline regulation

PLVA659A to PLVA668A ILO = 10 μA; IHI = 1 mA −−0.1 V

PLVA656A ILO = 50 μA; IHI = 1 mA −−0.1 V

PLVA650A ILO = 100 μA; IHI = 1 mA −−0.4 V

PLVA653A ILO = 100 μA; IHI = 1 mA −−0.2 V

Vnnoise voltage density f = 1 kHz; B = 1 kHz; IZ = 250 μA−−1.0

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-tp) thermal resistance from junction to tie-point 330 K/W

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

μV

------------

2004 Jan 14 6

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 14 7

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator diodes PLVA6xxA series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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does not give any representations or warranties,

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consequenc es of use of such information.

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reserves the right to make changes to information

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specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Net herlands R76/03/pp8 Date of release: 2004 Jan 14 Document order number: 9397 750 12445