CTLT3410-M621 (NPN)
CTLT7410-M621 (PNP)
SURFACE MOUNT
COMPLEMENTARY
LOW VCE(SAT)
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT3410-M621
and CTLT7410-M621 are Low VCE(SAT) transistors in
a very small leadless 1x2mm surface mount package,
designed for applications where small size, operational
efficiency, and low energy consumption are prime
requirements. Due to the leadless package design,
these devices are capable of dissipating up to 3 times
the power of similar devices in comparable sized
surface mount packages.
MARKING CODES: CTLT3410-M621: CB
CTLT7410-M621: CD
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Peak Collector Current ICM 1.5 A
Power Dissipation (Note 1) PD 0.9 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance (Note 1) ΘJA 139 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
ICBO V
CB=40V 100 nA
IEBO V
EB=6.0V 100 nA
BVCBO I
C=100µA 40 V
BVCEO I
C=10mA 25 V
BVEBO IE=100µA 6.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 25 30 50 mV
VCE(SAT) I
C=100mA, IB=10mA 40 50 75 mV
VCE(SAT) I
C=200mA, IB=20mA 80 95 150 mV
VCE(SAT) I
C=500mA, IB=50mA 190 205 250 mV
VCE(SAT) I
C=800mA, IB=80mA 290 320 400 mV
VCE(SAT) I
C=1.0A, IB=100mA 360 400 450 mV
APPLICATIONS:
• DC - DC Converters
• Switching Circuits
• LCD Backlighting
• Battery Powered Portable Equipment
FEATURES:
• High Operational Efficiency
• High Power to Footprint Ratio
• VCE(SAT) @ 1.0A = 250mV TYP
• High Collector Current
• Small TLM621 1x2mm Package
Notes (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2
TLM621 CASE
R3 (1-August 2011)
www.centralsemi.com