DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
1 of 7
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June 2017
© Diodes Incorporated
DMT32M5LFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
BVDSS
RDS(ON) Max
ID Max
TC = +25°C
30V
1.7mΩ @ VGS = 10V
100A
2.8mΩ @ VGS = 4.5V
100A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Ordering Information (Note 4)
Part Number
Case
Packaging
DMT32M5LFG-7
PowerDI3333-8
2,000/Tape & Reel
DMT32M5LFG-13
PowerDI3333-8
3,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Top View
SK2 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
Bottom View
SSSG
DDDD
Pin 1
Top View
PowerDI3333-8
SK2
YYWW
D
S
G
1
2
3
4
8
7
6
5
Equivalent Circuit
Green
PowerDI is a registered trademark of Diodes Incorporated.
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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June 2017
© Diodes Incorporated
DMT32M5LFG
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
TC = +25°C
TC = +70°C
ID
100
100
A
Continuous Drain Current (Note 5) VGS = 10V
TA = +25°C
TA = +70°C
ID
30
24
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
2.8
A
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
IDM
350
A
Pulsed Body Diode Forward Current (380μs Pulse, Duty Cycle = 1%)
ISM
350
A
Avalanche Current, L = 0.1mH
IAS
46.7
A
Avalanche Energy, L = 0.1mH
EAS
109
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.3
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
54
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
50
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
2.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TJ = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
30
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 24V, VGS = 0V
—
—
10
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = 20V, VDS = 0V
VGS = -16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1
1.4
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
1.4
1.7
mΩ
VGS = 10V, ID = 20A
—
2.1
2.8
VGS = 4.5V, ID = 15A
—
1.9
2.6
mΩ
VGS = 10V, ID = 20A,
TJ = +125°C (Note 8)
Diode Forward Voltage
VSD
—
0.7
1
V
VGS = 0V, IS = 2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
4066
—
pF
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
1736
—
Reverse Transfer Capacitance
Crss
—
333
—
Gate Resistance
Rg
—
0.71
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
—
34
—
nC
VDS = 15V, ID = 20A
Total Gate Charge (VGS = 10V)
Qg
—
67.7
—
Gate-Source Charge
Qgs
—
8
—
Gate-Drain Charge
Qgd
—
15
—
Turn-On Delay Time
tD(ON)
—
7.2
—
ns
VDD = 15V, VGS = 10V,
RG = 3Ω, ID = 20A
Turn-On Rise Time
tR
—
13.2
—
Turn-Off Delay Time
tD(OFF)
—
37.4
—
Turn-Off Fall Time
tF
—
23.9
—
Bodyy Diode Reverse Recovery Time
tRR
—
28.7
—
ns
IF = 15A, di/dt = 500A/μs
Body Diode Reverse Recovery Charge
QRR
—
45.8
—
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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DMT32M5LFG
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = 2.5V
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 10V
0
5
10
15
20
25
30
012345
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS = 5.0V
-55oC
25oC
85oC
125oC
150oC
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0 5 10 15 20 25 30
RD(SON), DRAIN-SOURCE ON-RESISTANCE
(m)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS = 4.5V
VGS =10V
0
2
4
6
8
10
2 4 6 8 10 12 14 16 18 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(m)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID= 20A
ID= 15A
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(m)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
VGS = 10V
-55oC
25oC
VGS = 10V
-55oC
25oC
85oC
125oC
150oC175oC
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
VGS = 4.5V, ID= 15A
VGS = 10V, ID= 20A
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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June 2017
© Diodes Incorporated
DMT32M5LFG
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(m)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS = 4.5V, ID= 15A
VGS = 10V, ID= 20A
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID= 1mA
ID= 250µA
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS = 0V
TA= -55oC
TA= 25oC
TA= 85oC
TA= 125oC
TA= 150oC
100
1000
10000
0 5 10 15 20 25 30
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
010 20 30 40 50 60 70
VGS (V)
Qg(nC)
Figure 11. Gate Charge
VDS = 15V, ID= 20A
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure12. SOA, Safe Operation Area
PW= 100ms
PW=100µs
PW=1s
RDS(ON) Limited
PW= 1ms
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS = 10V
PW= 10ms
PW=10s
DC
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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June 2017
© Diodes Incorporated
DMT32M5LFG
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
RθJA (t) = r(t) * RθJA
RθJA = 53℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5 D=0.7 D=0.9
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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© Diodes Incorporated
DMT32M5LFG
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
D
D2
E
e
b
E2
A
A3
Pin #1 ID
Seating Plane
L(4x)
A1
L1(3x)
b2(4x)
z(4x)
1
8
E3
E4
X3
Y3
X
Y
C
Y1
Y2
X1
X2
1
8Y4
PowerDI3333-8
Dim
Min
Max
Typ
A
0.75
0.85
0.80
A1
0.00
0.05
0.02
A3


0.203
b
0.27
0.37
0.32
b2
0.15
0.25
0.20
D
3.25
3.35
3.30
D2
2.22
2.32
2.27
E
3.25
3.35
3.30
E2
1.56
1.66
1.61
E3
0.79
0.89
0.84
E4
1.60
1.70
1.65
e


0.65
L
0.35
0.45
0.40
L1


0.39
z


0.515
All Dimensions in mm
Dimensions
Value (in mm)
C
0.650
X
0.420
X1
0.420
X2
0.230
X3
2.370
Y
0.700
Y1
1.850
Y2
2.250
Y3
3.700
Y4
0.540
DMT32M5LFG
Document number: DS39020 Rev. 4 - 2
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© Diodes Incorporated
DMT32M5LFG
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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