TIP132 TIP135 TIP137 (R) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 DESCRIPTION The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP137 . Also TIP135 is a PNP type. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 R1 Typ. = 5 K ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP Unit TIP132 TIP135 TIP137 V CBO Collector-Base Voltage (I E = 0) 60 100 V V CEO Collector-Emitter Voltage (I B = 0) 60 100 V VEBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A Collector Peak Current 12 A Base Current 0.3 A Total Dissipation at T case 25 o C T amb 25 o C Storage Temperature 70 2 W W IC ICM IB P tot Tstg Tj Max. Operating Junction Temperature -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. October 1999 1/4 TIP132 / TIP135 / TIP137 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.78 63.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I B = 0) Parameter V CE = Half Rated V CEO 0.5 mA I CBO Collector Cut-off Current (I E = 0) V CB = Rated VCBO 0.2 mA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 5 mA V CEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) VCE(sat) * Test Conditions I C = 30 mA for TIP135 for TIP132/TIP137 Min. 60 100 V V Collector-Emitter Saturation Voltage IC = 4 A IC = 6 A I B = 16 mA I B = 30 mA 2 4 V V VBE * Base-Emitter Voltage IC = 4 A V CE = 4 V 2.5 V h FE * DC Current Gain IC = 1 A IC = 4 A V CE = 4 V V CE = 4 V 500 1000 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas 2/4 Typ. Power Derating Curve 15000 TIP132 / TIP135 / TIP137 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 L4 16.4 13.0 0.645 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 TIP132 / TIP135 / TIP137 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4