IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 3-M5 16 2-5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 17 25 35 46 * High speed and low saturation voltage. 94 80 16 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). E1 C2E1 G1 * Isolated head sink (terminal to base). 23 39.5 0.8 6 30 35 7 12 23 G2 E2 C2E1 E2 C1 E1 G1 Weight: 265 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V MBM200GS12AW 1,200 20 200 400 200 (1) 400 1,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.96(20) (3) A A W C C VRMS N.m (kgf.cm) Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm) CHARACTERISTICS Item (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 19,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W Switching Times Fall Time tf 0.25 0.35 RG=6.2W (4) 0.55 1.0 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A,VGE=0V Reverse Recovery Time trr 0.35 IF=200A,VGE=-10V, di/dt=300A/ms ms Junction to case Rth(j-c) C/W 0.125 Thermal Impedance IGBT 0.25 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. PDE-M200GS12AW-0 http://store.iiic.cc/ 14V VGE=15V 13V12V 400 14V VGE=15V 13V12V TYPICAL 400 Tc=125C 300 11V 200 Pc=1000W 10V Collector Current, Ic (A) Collector Current, Ic (A) Tc=25C TYPICAL 100 11V 300 200 10V 100 9V 9V 0 0 2 4 6 8 0 10 0 TYPICAL 6 8 Tc=125C Collector to Emitter Voltage, VCE (V) 8 6 4 Ic=400A Ic=200A 2 8 6 4 15 10 5 0 Ic=400A Ic=200A 2 0 0 20 20 15 10 5 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 TYPICAL 400 Vcc=600V Ic =200A Tc=25C 15 Forward Current, IF (A) Gate to Emitter Voltage, VGE (V) 10 TYPICAL 10 Tc=25C Collector to Emitter Voltage, VCE (V) 4 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 10 2 10 5 VGE=0 Tc=25C Tc=125C 300 200 100 0 0 500 1000 1500 Gate Charge, QG (nc) Gate charge characteristics 0 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-M200GS12AW-0 http://store.iiic.cc/ TYPICAL TYPICAL 1.5 10 Vcc=600V VGE=15V RG=6.2W TC=25C Resistive Load Switching Time, t (ms) Switching Time, t (ms) 1 toff 0.5 ton VCC=600V VGE=15V IC=200A TC=25C Resistive Load 1 toff tr ton tf tf tr 0 0.1 0 50 100 150 200 250 1 10 Gate Resistance, RG (W) Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL Vcc=600V VGE=15V RG=6.2W TC=125C Inductive Load 30 Etoff Eton 20 10 Err 0 0 50 100 150 200 TYPICAL 100 Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 40 10 1 Transient Thermal Impedance, Rth(j-c) (C/W) Collector Current, Ic (A) VGE=15V RG=6.2W TC125C 10 1 0.1 200 400 600 800 1000 1200 10 100 Gate Resistance, RG (W) Switching loss vs. Gate resistance 1000 0 Etoff Eton 1 250 VCC=600V VGE=15V IC =200A TC=125C Inductive Load Collector Current, IC (A) Switching loss vs. Collector current 100 100 1400 1 Diode IGBT 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDE-M200GS12AW-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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