MBM200GS12AW - Hitachi

PDE-M200GS12AW-0

T M

MOD

ODU

MBM200GS12AW

Silicon N-channel IGBT OUTLINE DRAWING

FEA

EAEA

EAT

URE

RES

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling

diode - ultra soft fast recovery d i od e(USFD).

* Isolated head sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25°C )

Item Symbol Unit MBM200GS12AW

Collector Emitter Voltage VCES V 1,200

Gate Emi tter Voltage VGES V±20

Collector Current DC IC200

1ms ICp A400

Forward Current DC IF 200 (1)

1ms IFM A400

Collector Power Dissipa tion Pc W 1,000

Junction Temperature Tj°C -40 ~ +150

Storage Temperature Tstg °C -40 ~ +125

Isolation Voltage VISO VRMS 2,500(AC 1 minute)

Screw Torque Terminals - 1.96(20) (2)

Mounting - N.m

(kgf.cm) 1.96(20) (3)

Notes:(1)RMS Current of Diode 60Arms max.

(2)(3)Recommended Value 1.67N.m(17kgf.cm)

CHARACTERISTICS (Tc=25°C )

Item Symbol Unit Min. Typ. Max. Test Conditions

Colle ctor Emitter Cut-Off Curre nt I CES mA - - 1.0 VCE=1,200V,VGE=0V

Gate Emi tter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V

Collector Emitter Saturatio n Voltage VCE(sat) V-2.73.4I

C=200A,VGE=15V

Gate Emi tter Threshold Voltage VGE(TO) V--10V

CE=5V, IC =200mA

Input Capacitance Cies pF - 19,000 - VCE=10V,VGE=0V,f=1MHz

Rise Time tr- 0.2 0.35 VCC=600V

Turn On Time ton - 0.35 0.55 RL=3.0W

Fall Time tf- 0.25 0.35 RG=6.2W (4)

Switching Times

Turn Off Time toff

- 0.55 1.0 VGE=±15V

Peak Forward Voltage Drop VFM V-2.53.5I

F=200A,VGE=0V

Reverse Recovery Time trr ms--0.35I

F=200A,VGE=-10V, di/dt=300A/ms

IGBT Rth(j-c) - - 0.125

Thermal Impedance FWD Rth(j-c) °C/W - - 0.25 Junction to case

Notes:(4) RG value is the test cond ition ’s value for decision of the switching times, not recomm ended value.

Determine the suitable R

G val ue after the measurement of switch ing waveforms

(overshoot voltage,etc.)with appliance mounted.

Unit in mm

Weight: 265 (g) TERMINALS

16 16 16

23 23

3-M5

4-Fast-on

Terminal

#110

C2E1

2-φ5.6

6 12

39.5

φ0.8

E2 E2

C2E1

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VGE=15V 13V12V

400

300

200

0246810

100

11V

TYPICAL

10V

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

Collector current vs. Collector to Emitter voltage

Ic=200A

Ic=400A

00 5 10 15 20

TYPICAL

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

Ic=400A

Ic=200A

Collector to Emitter voltage vs. Gate to Emitter voltage

001000

500 1500

TYPICAL TYPICAL

Vcc=600V

Ic =200A

Tc=25°C

Gate to Emitter Voltage, V

(V)

Forward Current, I

(A)

Gate Charge, QG (nc)

Gate charge characteristics

200

300

400

100

00 1 2 3 4 5

Forward Voltage, VF (V)

Forward voltage of free-wheeling diode

00 5 10 15 20

TYPICAL

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

Collector to Emitter voltage vs. Gate to Emitter voltage

TYPICAL

Tc=125°C

Collector to Emitter Voltage, VCE (V)

Collector current vs. Collector to Emitter voltage

PDE-M200GS12AW-0

Tc=25°C

14V 14V

Pc=1000W

VGE=15V 13V12V

200

400

300

0 2 4 6 8 10

100

11V

10V

VGE=0

Tc=25°C

Tc=125°C

Tc=25°C

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1.5

0.5

0 50 100 150 200 250

TYPICAL

Switching Time, t (ms)

Collector Current, IC (A)

Switching time vs. Collector current

ton

toff

Vcc=600V

VGE=±15V

RG=6.2W

TC=25°C

Resistive Load

00 50 100 150 200 250

Switching Loss, Et

,Et

off

, E

(mJ/pulse)

Collector Current, IC (A)

Switching loss vs. Collector current

0.1

110 100

Switching Time, t (ms)

Gate Resistance, RG (W)

Switching time vs. Gate resistance

TYPICAL

100

1110 100

Switching Loss, Et

, Et

off

(mJ/pulse)

Gate Resistance, RG (W)

Switching loss vs. Gate resistance

VCC=600V

VGE=±15V

IC =200A

TC=125°C

Inductive Load

1000

100

0.1 0 200 400 600 800 1000 1200 1400

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

Reverse biased safe operating area

Etoff

Eton

0.1

0.01

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance, R

th(j-c)

(°C/W)

Time, t (s)

Transient thermal impedance

Diode

IGBT

VGE=±15V

RG=6.2W

TC£125°C

PDE-M200GS12AW-0

Etoff

Eton

Err

Vcc=600V

VGE=±15V

RG=6.2W

TC=125°C

Inductive Load

VCC=600V

VGE=±15V

IC=200A

TC=25°C

Resistive Load

toff

ton

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1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are adviced to contact Hitachi sales department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3. In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

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any other cause during operation of the user’s units according to this data sheets. Hitachi

assumes no responsibility for an y intellectual propert y claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

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secondary damage resulting from use at a value exceeding the absolute maximum rating.

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Notices

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