HA4-2522/883Z - Intersil Corporation

3-150

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

HA-2520/883

HA-2522/883

Uncompensated, High Slew Rate

Operational Ampliﬁers

Description

Description The HA-2520/883 and HA-2522/883 are mono-

lithic operational ampliﬁers which deliver an unsurpassed

combination of speciﬁcations for slew rate, bandwidth and

settling time. These dielectrically isolated ampliﬁers are

designed for closed loop gains of 3 or greater without exter-

nal compensation. In addition, these high performance com-

ponents also provide low offset current and high input

impedance.

The 100V/µs (min) slew rate (80V/µs for HA-2522/883) and

fast settling time of these ampliﬁers make them ideal com-

ponents for pulse ampliﬁcation and data acquisition designs.

To insure compliance with slew rate and transient response

speciﬁcations, all devices are 100% tested for AC perfor-

mance characteristics over full temperature. These devices

are valuable components for RF and video circuitry requiring

wideband operation. For accurate signal conditioning

designs, the HA-2520/883’s superior dynamic speciﬁcations

are complemented by 25nA (max) offset current (50nA for

HA-2522/883) and offset voltage adjust capability.

Ordering Information

PART

NUMBER TEMPERATURE

RANGE PACKAGE

HA2-2520/883 -55oC to +125oC 8 Pin Can

HA2-2522/883 -55oC to +125oC 8 Pin Can

HA4-2522/883 -55oC to +125oC 20 Lead Ceramic LCC

HA7-2520/883 -55oC to +125oC 8 Lead CerDIP

HA7-2522/883 -55oC to +125oC 8 Lead CerDIP

Features

• This Circuit is Processed in Accordance to MIL-STD-

883 and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

• High Slew Rate (HA-2520/883) . . . . . . . . 100V/µs (Min)

120V/µs (Typ)

• Wide Power Bandwidth (HA-2520/883) . . 1.5MHz (Min)

• Wide Gain Bandwidth (HA-2520/883). . . . 10MHz (Min)

20MHz (Typ)

• High Input Impedance (HA-2520/883). . . . . 50MΩ (Min)

100MΩ (Typ)

• Low Offset Current (HA-2520/883) . . . . . . . .25nA (Min)

10nA (Typ)

• Fast Settling (0.1% of 10V Step). . . . . . . . . 200ns (Typ)

• Low Quiescent Supply Current . . . . . . . . . .6mA (Max)

Applications

• Data Acquisition Systems

• RF Ampliﬁers

• Video Ampliﬁers

• Signal Generators

• Pulse Ampliﬁcation

July 1994

Spec Number 511004-883

File Number 3735

Pinouts

HA-2520/883, HA-2522/883

(CERDIP)

TOP VIEW

HA-2522/883

(CLCC)

TOP VIEW

HA-2520/883, HA-2522/883

(METAL CAN)

TOP VIEW

COMP

V+

OUT

BAL

-IN

+IN

V-

-4

9101112

3212019

BAL

V-

-IN

+IN

V+

OUT

BAL

COMP

-2

COMP

OUT

-IN

V-

BAL

+IN

V+

BAL

3-151

Speciﬁcations HA-2520/883, HA-2522/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 40V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50mA

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

Thermal Resistance θJA θJC

CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W

Ceramic LCC Package . . . . . . . . . . . . . . 75oC/W 23oC/W

Metal Can Package. . . . . . . . . . . . . . . . . 160oC/W 75oC/W

Package Power Dissipation Limit at +75oC for TJ≤ +175oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW

Package Power Dissipation Derating Factor Above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . .13.3mW/oC

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . .6.3mW/oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Operating Conditions

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINCM ≤ 1/2 (V+ - V-)

RL≥ 2kΩ

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: VSUPPLY =±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Speciﬁed.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

HA-2520/883 HA-2522/883

UNITSMIN MAX MIN MAX

Input Offset

Voltage VIO VCM = 0V 1 +25oC -8 8 -10 10 mV

2, 3 +125oC, -55oC -10 10 -14 14 mV

Input Bias Current +IBVCM = 0V,

+RS = 100kΩ,

-RS = 100Ω

1 +25oC -200 200 -250 250 nA

2, 3 +125oC, -55oC -400 400 -500 500 nA

-IBVCM = 0V,

+RS = 100Ω,

-RS = 100kΩ

1 +25oC -200 200 -250 250 nA

2, 3 +125oC, -55oC -400 400 -500 500 nA

Input Offset

Current IIO VCM = 0V,

+RS = 100kΩ,

-RS = 100kΩ

1 +25oC -25 25 -50 50 nA

2, 3 +125oC, -55oC -50 50 -100 100 nA

Common Mode

Range +CMR V+ = 5V, V- = -25V 1 +25oC +10 - +10 - V

2, 3 +125oC, -55oC +10 - +10 - V

-CMR V+ = 25V, V- = -5V 1 +25oC - -10 - -10 V

2, 3 +125oC, -55oC - -10 - -10 V

Large Signal

Voltage Gain +AVOL VOUT = 0V and +10V,

RL = 2kΩ4 +25oC 10 - 7.5 - kV/V

5, 6 +125oC, -55oC 7.5 - 5 - kV/V

-AVOL VOUT = 0V and -10V,

RL = 2kΩ4 +25oC 10 - 7.5 - kV/V

5, 6 +125oC, -55oC 7.5 - 5 - kV/V

Common Mode

Rejection Ratio +CMRR ∆VCM = +10V,

V+ = +5V, V- = -25V,

VOUT = -10V

1 +25oC 80 - 74 - dB

2, 3 +125oC, -55oC 80 - 74 - dB

-CMRR ∆VCM = -10V,

V+ = +25V, V- = -5V,

VOUT = +10V

1 +25oC 80 - 74 - dB

2, 3 +125oC, -55oC 80 - 74 - dB

Output Voltage

Swing +VOUT RL = 2kΩ4 +25oC10-10-V

5, 6 +125oC, -55oC10 - 10 - V

-VOUT RL = 2kΩ4 +25oC - -10 - -10 V

5, 6 +125oC, -55oC - -10 - -10 V

Spec Number 511004-883

3-152 Spec Number 511004-883

Speciﬁcations HA-2520/883, HA-2522/883

Output Current +IOUT VOUT = -10V 4 +25oC 10 - 10 - mA

5, 6 +125oC, -55oC 7.5 - 7.5 - mA

-IOUT VOUT = +10V 4 +25oC - -10 - -10 mA

5, 6 +125oC, -55oC - -7.5 - -7.5 mA

Quiescent Power

Supply Current +ICC VOUT = 0V, IOUT = 0mA 1 +25oC-6-6mA

2, 3 +125oC, -55oC - 6.5 - 7 mA

-ICC VOUT = 0V, IOUT = 0mA 1 +25oC -6 - -6 - mA

2, 3 +125oC, -55oC -6.5 - -7 - mA

Power Supply

Rejection Ratio +PSRR ∆VSUP = 10V,

V+ = +20V, V- = -15V,

V+ = +10V, V- = -15V

1 +25oC 80 - 74 - dB

2, 3 +125oC, -55oC 80 - 74 - dB

-PSRR ∆VSUP = 10V,

V+ = +15V, V- = -20V,

V+ = +15V, V- = -10V

1 +25oC 80 - 74 - dB

2, 3 +125oC, -55oC 80 - 74 - dB

Offset Voltage

Adjustment +VIOAdj Note 1 1 +25oCV

IO-1 - VIO-1 - mV

2, 3 +125oC, -55oCV

IO-1 - VIO-1 - mV

-VIOAdj Note 1 1 +25oCV

IO+1 - VIO+1 - mV

2, 3 +125oC, -55oCV

IO+1 - VIO+1 - mV

NOTE:

1. Offset adjustment range is [VIO(Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment

through 0V.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: VSUPPLY =±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +3V/V, Unless Otherwise Speciﬁed.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

HA-2520/883 HA-2522/883

UNITSMIN MAX MIN MAX

Slew Rate +SR VOUT = -5V to +5V

25% ≤+SR ≤ 75% 7 +25oC 100 - 80 - V/µs

8A, 8B +125oC, -55oC 84 - 60 - V/µs

-SR VOUT = +5V to -5V

75% ≥-SR ≥ 25% 7 +25oC 100 - 80 - V/µs

8A, 8B +125oC, -55oC 84 - 60 - V/µs

Rise and Fall

Time TRVOUT = 0 to +200mV

10% ≤TR≤ 90% 7 +25oC - 50 - 50 ns

8A, 8B +125oC, -55oC - 55 - 60 ns

TFVOUT = 0 to -200mV

10% ≤TF≤ 90% 7 +25oC - 50 - 50 ns

8A, 8B +125oC, -55oC - 55 - 60 ns

Overshoot +OS VOUT = 0 to +200mV 7 +25oC-40-50%

8A, 8B +125oC, -55oC-45-60%

-OS VOUT = 0 to -200mV 7 +25oC-40-50%

8A, 8B +125oC, -55oC-45-60%

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: VSUPPLY =±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Speciﬁed.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

HA-2520/883 HA-2522/883

UNITSMIN MAX MIN MAX

3-153 Spec Number 511004-883

Speciﬁcations HA-2520/883, HA-2522/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: VSUPPLY =±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV≥3, CCOMP = 0pF, Unless Otherwise Speciﬁed.

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

HA-2520/883 HA-2522/883

UNITSMIN MAX MIN MAX

Differential Input

Resistance RIN VCM = 0V 1 +25oC50-40-MΩ

Full Power

Bandwidth GBWP VO = 200mV, fO = 10kHz 1 +25oC 10 - 10 - MHz

VO = 200mV , fO = 1MHz 1 +25oC 10 - 10 - MHz

Full Power

Bandwidth FPBW VPEAK = 10V 1, 2 +25oC 1.6 - 1.2 - MHz

Minimum Closed

Loop Stable Gain CLSG RL = 2kΩ, CL = 50pF 1 -55oC to +125oC +3 - +3 - V/V

Quiescent Power

Consumption PC VOUT = 0V, IOUT = 0mA 1, 3 -55oC to +125oC - 195 - 210 mW

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at ﬁnal production. These param-

eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization

based upon data from multiple production runs which reﬂect lot to lot and within lot variation.

2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).

3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Parameters (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7, 8A, 8B

Group A Test Requirements 1, 2, 3, 4, 5, 6, 7, 8A, 8B

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-154

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

HA-2520/883, HA-2522/883

Die Characteristics

DIE DIMENSIONS:

67 x 57 x 19 mils ± 1 mils

1700 x 1440 x 483µm± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16kÅ±2kÅ

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

WORST CASE CURRENT DENSITY:

0.26 x 105 A/cm2

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

TRANSISTOR COUNT:

HA-2520/883: 40

HA-2522/883: 40

PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-2520/883, HA-2522/883

COMP V+ OUT BAL

BAL -IN +IN V-

Spec Number 511004-883