NPN SWITCHING TABLE 3 NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vc), decreasing Collector Current (Ic), Power Dissipation (P,o;), etc. Max Vceisat) Nee f; Min | Switching times Max at at at (Max.} at Type |Vceo| Ic Package} Comple- lc | tg |Min|Max!} Ic le | ton | tote | Ic ment Vi[mA |] V |mA; mA mA MHz|mA| ns | ns | mA 2N3262 | 100 | 1500] 0.6 |1000) 100 | 40 | |500|) | | 40] 750 |1000| TO-39 - ZT86 80 | 500 | 0.2} 50 | 5 | 38 | 85 | 10 |}200/ 10] 50%) 170%} 20 | TO-18 - 2T88 80 | 500 | 0.2} 50 | 5 | 75 |170) 10 |200] 10} 50*, 170% 20 | TO-18 Z2T89 70 | 500 |} 0.2) 50 | 5 | 75 |250] 10 |200| 10} 50*1 170*| 20 | TO-18 | ZT189 2N2102 | 65 |1000} 0.5 | 150] 15 | 40 | 120) 150] 60 | 50 (note 1) TO-39 | 2N4036 BFX85 60 | 1000/0.35; 150] 15 | 70 | |150) 50 | 50} 55*| 360*| 150 | TO-39 - BFX84 60 |1000/0.35] 150; 15 | 30 | |150) 50 | 50] 55%) 360% 150 | TO-39 - BCY65E | 60 | 100 |0.35] 10 |0.25/120/460] 2 |125/101150! 800! 10 | TO-18 | BCY77 2N1613 | 50 |1000] 1.5 | 150) 40 |1201150) 60 | 50 (note 1) TO-39 - 2N2270 | 45 | 1000] 0.9 | 150} 15 | 50 |200/150] 60 | 50 (note 1) TQ-39 - ZT83 45 | 500 | 0.2) 50 | 5 | 38 | 85 | 10 |200) 10) 50%] 170*| 20 | TO-18 | ZT183 2784 45 | 500 /0.2 | 50 | 5 | 75 |170| 10 |200| 10| 50* 170% 20 | TO-18 | 27184 BCY59 45 | 200 |0.35| 10 [0.25)120|630) 2 |125] 10/150) 800} 10 | TO-18 | BCY79 2N2218A | 40 | 800 | 0.3 | 150; 15 | 40 |120/150) 250) 20] 35 | 285 | 150 | TO-39 | 2N2904A 2N2219A | 40 | 800 | 0.3 | 150] 15 | 100/300) 150}300) 20] 35 | 285 ; 150 | TO-39 | 2N2905A 2N2221A | 40 | 800 | 0.3 | 150] 15 | 40 |120/150) 250) 20} 35 | 285 | 150 |} TO-18 | 2N2906A 2N2222A | 40 | 800 | 0.3 | 150] 15 |100/300) 150/300) 20 | 35 | 285 | 150 | TO-18 | 2N2907A BFY50 35 11000] 0.2 | 150] 15 | 30] |150] 60 | 50} 55*| 360%) 150 | TO-39 - BFX86 35 |1000/0.35/ 150] 15 | 70; |150} 50 | 50/ 55*| 360% 150 | TO-39 2781 35 | 500 | 0.2 | 10 | 2 | 38/162] 10 |200] 10} 50*| 170*| 20 | TO-18 j ZT181 2782 35 | 500} 0.2) 10 | 2 | 75 |250) 10 |}200| 10} 50*| 170*| 20 | TO-18 | Z2T182 2N3512 | 35 | | 0.4] 150] 7.5] 10] |500) | | 30] 45 | 150] TO-39 BCY58 32 | 200 |0.35] 10 |0.25/120/630| 2 |125] 10/150; 800 | 10 | TO-18 | BCY78 *Typical Note 1 t.,,=30ns Continued 5-5SEMICONDUCTOR DICE NPN MEDIUM POWER Vceo|Vceo} cao hee Veeisay Max.| fr |Coao Chip Dice type | Min. | Min. Max. at Veg at tc Vee] at ic Ig | Min. |Max. geometry Volts|Volts| nA |Volts} Min. |Max.| mA |Volts|Volts| mA | mA | MHz | pF ZTX653 120} 100 | 100 | 100 | 100 | 300 | 500} 2 | 0.3 }1000/ 100} 140) - G10 150] 15 | 150} 15 G9 200] 20 | 60 |; 25 G9 150] 15 | 50 | 15 G9 ZTX453 | 120] 100 | 100 | 100 | 40 | 200] 150/|. 10 ZT91 120 | 100 | 100] 120; 40 | 120] 200| 10 2N1893 |120] 80 | 10 | 90 | 40 | 120/150] 10 ZTX652 | 100} 80 ; 100} 80 | 100/300) 500; 2 1000] 100} 140 | G10 ZTX452 =| 100] 80 | 100} 80 | 40 | 150} 150} 10 150; 15 | 150} 15 G9 MPSAO6 | 80 | 80 | 100; 80 | 50 | - | 100] 1 100] 10 | 100] - G9 ZTX651 80 | 60 | 100; 60 | 100 | 300; 500] 2 1000) 100 | 140 | G10 ZTX451 80 | 60 | 100} 60 | 50 | 150] 150] 10 BFY50 80 | 35 | 500] 80 |} 30 | - | 150] 10 2N1613 75 | 50*) 10 | 60 | 40 | 120/150] 10 2N1711 75 | 50*| 10 | 60 | 100) 300/150) 10 Z2T90 60 | 60 | 10 | 60 | 6O | 200; 200} 10 MPSAO5 | 60 | 60 | 100] 60 | 50 | - | 100; 1 ZTX650 60 ; 45 | 100) 45 | 100) 300/500| 2 ZTX450 60 | 45 | 100} 45 | 100 | 300) 150; 10 BFY51 60 | 30 |500; 60 | 40 | - | 150] 10 BC337A 50+} 45 (1008) 45 | 100/250); 100] 1 BC337B 50+) 45 |1008] 45 | 160/400; 100] 1 BC337C 50t| 45 11008) 45 | 250; 630/100) 1 ZTX449 50 | 30 | 100} 40 | 100} 300/500; 2 - 0 2 150) 15 | 150} 15 G9 150) 15 | 60 | 12 G9 150] 15 - 25 G9 150; 15 | 70 | 15 G9 200] 20 } 60 | 25 G9 100} 10 | 100] - G9 1000} 100] 140; - G10 150} 15 | 160} 15 G9 150} 15 | 50 | 12 G9 500} 50 | 100 | 12 G9 500 | 50 | 100 | 12 G9 500; 50 | 100 | 12 G9 1000] 100 | 150 | 15 G11 150] 15 | 50 | 12 G9 1000] 100 | 150 | 50 G10 BFY52 40 | 20 | 500] 40 | 60 150 ZTX649 35 | 25 | 100} 30 | 100 | 300 {1000 = SPooe9 oP Sof ona PS oloco=9 DRAINING HOGAN AADNS Ge qQruywann tVces Slices *Vcer PNP MEDIUM POWER Vepo|Vcea| cso hee Veeisay Max.) fr |Copo Chi Dice type | Min. | Min. Max. at Vog at lo Vee | at Ic Ip | Min. |Max. geometry Volts|Volts; nA |Volts} Min. |Max.| mA |Volts|Volts}| mA | mA | MHz | pF ZTX753 | 120] 100 | 100 | 100 | 100 | 300 | 500} 2 | 0.3 }1000)/ 100{| 100 | - G12 ZTX553 | 120/100] 100/100} 40 | 200! 150; 10 |0.25/ 150) 15 | 150 | 12 G11 ZTX752 |100] 80 | 100] 80 | 100] 300}500; 2 | 0.3 [1000/1100] 100) - G12 ZTX552 |100} 80 | 100] 80 | 40 | 150/150! 10 | 0.7 |} 150] 15 | 150 | 25 G11 MPSAS56 | 80 | 80 | 100] 80 | 50 |] - |100} 1 {|0.25; 100] 10 | 100} - G11 ZTX751 80 | 60 | 100] 60 | 100 | 300; 500} 2 | 0.3 }1000) 100) 100 | - Gi2 ZTX551 80 | 60 | 100] 60 | 50 | 150) 150] 10 /0.35) 150) 15 | 150 | 25 G11 MPSA55 |} 60 | 60 | 100] 60 } 50 |} - |100] 1 j0.25) 100] 10 | 100) - G11 ZTX750 | 60 | 45 | 100] 45 | 100] 300/500] 2 | 0.3 |1000] 100] 100 | - G12 ZTX550 | 60 | 45 | 100] 45 | 100 | 300; 150] 10 |0.25!150] 15 | 150 | 25 G11 BC327A | 50t| 45 |1008| 45 | 100) 250,100] 1 | 0.7 | 500} 50 | 100* 12 G11 BC327B | 50+] 45 |1008) 45 | 160)400|100; 14 | 0.7 | 500} 50 | 100*| 12 G11 BC327C | 50+} 45 |1008] 45 | 250/630/100| 1 | 0.7 | 500} 50 | 100*| 12 G11 ZTX749 | 35 | 25 | 100; 30 | 100} 300 |1000) 2 | 0.3 {1000} 100} 100 | 100 G12 ZTX549 | 35 | 25 | 100; 30 | 100] 300] 500) 2 | 0.5 {1000} 100} 100 | 25 G11 tVces Slces *Typical values